JP4640177B2 - 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 - Google Patents

感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 Download PDF

Info

Publication number
JP4640177B2
JP4640177B2 JP2005514066A JP2005514066A JP4640177B2 JP 4640177 B2 JP4640177 B2 JP 4640177B2 JP 2005514066 A JP2005514066 A JP 2005514066A JP 2005514066 A JP2005514066 A JP 2005514066A JP 4640177 B2 JP4640177 B2 JP 4640177B2
Authority
JP
Japan
Prior art keywords
photosensitive element
light
resin composition
compound
photosensitive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005514066A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2005029188A1 (ja
Inventor
尚 熊木
昌宏 宮坂
靖久 市橋
伊藤  俊樹
誠 鍛治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Publication of JPWO2005029188A1 publication Critical patent/JPWO2005029188A1/ja
Application granted granted Critical
Publication of JP4640177B2 publication Critical patent/JP4640177B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Polymerisation Methods In General (AREA)
JP2005514066A 2003-09-24 2004-09-17 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 Expired - Fee Related JP4640177B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003331461 2003-09-24
JP2003331461 2003-09-24
PCT/JP2004/013677 WO2005029188A1 (ja) 2003-09-24 2004-09-17 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法

Publications (2)

Publication Number Publication Date
JPWO2005029188A1 JPWO2005029188A1 (ja) 2007-11-15
JP4640177B2 true JP4640177B2 (ja) 2011-03-02

Family

ID=34373042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005514066A Expired - Fee Related JP4640177B2 (ja) 2003-09-24 2004-09-17 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法

Country Status (6)

Country Link
US (1) US7622243B2 (https=)
JP (1) JP4640177B2 (https=)
KR (2) KR20060055547A (https=)
CN (1) CN1856742B (https=)
TW (1) TW200512540A (https=)
WO (1) WO2005029188A1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101141841B1 (ko) 2005-10-25 2012-05-08 히다치 가세고교 가부시끼가이샤 감광성 수지 조성물, 이것을 이용한 감광성 엘리먼트,레지스트 패턴의 형성방법 및 프린트 배선판의 제조방법
KR100951874B1 (ko) * 2006-04-24 2010-04-12 주식회사 코오롱 Ldi용 드라이 필름 포토레지스트 수지 조성물
TW200844652A (en) * 2006-11-15 2008-11-16 Taiyo Ink Mfg Co Ltd Process for forming solder resist film and photosensitive composition
JP5153304B2 (ja) * 2006-11-15 2013-02-27 太陽ホールディングス株式会社 感光性組成物
US7838197B2 (en) * 2006-11-15 2010-11-23 Taiyo Ink Mfg. Co., Ltd. Photosensitive composition
US7776509B2 (en) * 2007-02-06 2010-08-17 Canon Kabushiki Kaisha Photosensitive compound, photosensitive composition, resist pattern forming method, and device production process
US7615332B2 (en) * 2007-02-06 2009-11-10 Canon Kabushiki Kaisha Photosensitive compound, photosensitive composition, resist pattern forming method, and device production process
WO2009116401A1 (ja) * 2008-03-17 2009-09-24 日立化成工業株式会社 感光性樹脂組成物、並びにこれを用いた感光性エレメント、ソルダーレジスト及びプリント配線板
EP2562599B1 (en) 2009-01-29 2014-12-10 Digiflex Ltd. Process for producing a photomask on a photopolymeric surface
CN101759814B (zh) * 2009-12-25 2013-06-19 深圳市有为化学技术有限公司 单或双官能团硫杂蒽酮及含有该单或双官能团硫杂蒽酮的光引发剂
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
CN111279804B (zh) * 2017-12-20 2023-10-24 住友电气工业株式会社 制造印刷电路板和层压结构的方法
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
SG11202108851RA (en) 2020-01-15 2021-09-29 Lam Res Corp Underlayer for photoresist adhesion and dose reduction
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
CN115702475A (zh) 2020-06-22 2023-02-14 朗姆研究公司 用于含金属光致抗蚀剂沉积的表面改性
EP4078292A4 (en) 2020-07-07 2023-11-22 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US20230107357A1 (en) 2020-11-13 2023-04-06 Lam Research Corporation Process tool for dry removal of photoresist
JP7681106B2 (ja) 2020-12-08 2025-05-21 ラム リサーチ コーポレーション 有機蒸気によるフォトレジストの現像
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
JP7852072B2 (ja) 2023-07-27 2026-04-27 ラム リサーチ コーポレーション 金属含有フォトレジストのためのオールインワン乾式現像

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01159637A (ja) * 1987-12-16 1989-06-22 Daicel Chem Ind Ltd 感光性硬化組成物
JPH0235454A (ja) * 1988-07-25 1990-02-06 Sekisui Chem Co Ltd 感光性樹脂組成物
JPH0262545A (ja) * 1988-08-29 1990-03-02 Asahi Chem Ind Co Ltd 感光性樹脂組成物
JPH02113251A (ja) * 1988-10-24 1990-04-25 Hitachi Chem Co Ltd 感光性樹脂組成物及びこれを用いた感光性エレメント
JPH02161441A (ja) * 1988-12-15 1990-06-21 Daicel Chem Ind Ltd 光重合性組成物
JPH02161437A (ja) * 1988-12-15 1990-06-21 Daicel Chem Ind Ltd 光重合性組成物
JPH07248623A (ja) * 1994-03-11 1995-09-26 Asahi Chem Ind Co Ltd 光硬化性樹脂積層体及びそれを用いるプリント配線板の製造方法
JP2001133968A (ja) * 1999-11-09 2001-05-18 Fuji Photo Film Co Ltd 感光性組成物
JP2001201851A (ja) * 2000-01-18 2001-07-27 Asahi Kasei Corp 光重合性樹脂組成物
JP2002351086A (ja) * 2001-03-22 2002-12-04 Fuji Photo Film Co Ltd 露光装置
JP2003262956A (ja) * 2002-03-12 2003-09-19 Hitachi Chem Co Ltd 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの製造法及びプリント配線板の製造法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2909994A1 (de) * 1979-03-14 1980-10-02 Basf Ag Acylphosphinoxidverbindungen, ihre herstellung und verwendung
US5922509A (en) 1998-03-18 1999-07-13 Morton International, Inc. Photoimageable compositions having improved stripping properties in aqueous alkaline solutions
JP4014872B2 (ja) 1999-06-24 2007-11-28 日立化成工業株式会社 感光性エレメント、感光性エレメントロール、これを用いたレジストパターンの製造法、レジストパターン、レジストパターン積層基板、配線パターンの製造法及び配線パターン
US6579914B1 (en) 2000-07-14 2003-06-17 Alcatel Coating compositions for optical waveguides and optical waveguides coated therewith
ES2324983T3 (es) * 2001-08-21 2009-08-21 Ciba Holding Inc. Oxidos y sulfuros de mono- y bis- acilfosfina batocromicos y su utilizacion como fotoiniciadores.
US7230122B2 (en) * 2003-11-04 2007-06-12 National Starch And Chemical Investment Holding Corporation Sulfonium salt photinitiators and use thereof
KR20070004649A (ko) * 2004-01-27 2007-01-09 시바 스페셜티 케미칼스 홀딩 인크. 열적으로 안정한 양이온성 광경화성 조성물

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01159637A (ja) * 1987-12-16 1989-06-22 Daicel Chem Ind Ltd 感光性硬化組成物
JPH0235454A (ja) * 1988-07-25 1990-02-06 Sekisui Chem Co Ltd 感光性樹脂組成物
JPH0262545A (ja) * 1988-08-29 1990-03-02 Asahi Chem Ind Co Ltd 感光性樹脂組成物
JPH02113251A (ja) * 1988-10-24 1990-04-25 Hitachi Chem Co Ltd 感光性樹脂組成物及びこれを用いた感光性エレメント
JPH02161441A (ja) * 1988-12-15 1990-06-21 Daicel Chem Ind Ltd 光重合性組成物
JPH02161437A (ja) * 1988-12-15 1990-06-21 Daicel Chem Ind Ltd 光重合性組成物
JPH07248623A (ja) * 1994-03-11 1995-09-26 Asahi Chem Ind Co Ltd 光硬化性樹脂積層体及びそれを用いるプリント配線板の製造方法
JP2001133968A (ja) * 1999-11-09 2001-05-18 Fuji Photo Film Co Ltd 感光性組成物
JP2001201851A (ja) * 2000-01-18 2001-07-27 Asahi Kasei Corp 光重合性樹脂組成物
JP2002351086A (ja) * 2001-03-22 2002-12-04 Fuji Photo Film Co Ltd 露光装置
JP2003262956A (ja) * 2002-03-12 2003-09-19 Hitachi Chem Co Ltd 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの製造法及びプリント配線板の製造法

Also Published As

Publication number Publication date
JPWO2005029188A1 (ja) 2007-11-15
KR20080017492A (ko) 2008-02-26
KR20060055547A (ko) 2006-05-23
KR100907368B1 (ko) 2009-07-10
CN1856742A (zh) 2006-11-01
TWI365354B (https=) 2012-06-01
US20070105036A1 (en) 2007-05-10
WO2005029188A1 (ja) 2005-03-31
US7622243B2 (en) 2009-11-24
CN1856742B (zh) 2010-11-24
TW200512540A (en) 2005-04-01

Similar Documents

Publication Publication Date Title
JP4640177B2 (ja) 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
US8192916B2 (en) Photosensitive resin composition, photosensitive element, method for forming resist pattern and method for producing printed wiring board
JP4924230B2 (ja) 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP5136423B2 (ja) 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
WO2010098183A1 (ja) 感光性樹脂組成物、並びにこれを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
WO2009145120A1 (ja) 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP2009003000A (ja) 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの形成方法、プリント配線板の製造方法及び光硬化物の除去方法
JP5046019B2 (ja) 感光性樹脂組成物、並びにこれを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP2004348114A (ja) 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP4525626B2 (ja) 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP4941182B2 (ja) 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP5532551B2 (ja) 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP2004326084A (ja) 感光性エレメント、これを用いたレジストパターンの形成方法及びプリント配線板の製造方法
WO2024210041A1 (ja) 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及び配線基板の製造方法
JP2010060891A (ja) 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP4599974B2 (ja) 感光性樹脂組成物、並びにこれを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP2005221739A (ja) 感光性樹脂組成物、これを用いた感光性エレメント、フォトレジストパターンの製造法及びプリント配線板の製造法
JP4555945B2 (ja) 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP2007248590A (ja) 感光性樹脂組成物層、これを用いた感光性エレメント、レジストパターンの形成方法およびプリント配線板の製造方法
JP2007004138A (ja) 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JPWO2007113901A1 (ja) 感光性樹脂組成物、並びにこれを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP2003098663A (ja) 感光性エレメント、及びこれを用いたレジストパターンの製造法
JP2011018069A (ja) 感光性エレメント、これを用いたレジストパターンの形成方法及びプリント配線板の製造方法
JPWO2006038279A1 (ja) 感光性エレメント、これを用いたレジストパターンの形成方法及びプリント配線板の製造方法
JP2006330168A (ja) 感光性エレメント、これを用いたレジストパターンの形成方法及びプリント配線板の製造方法

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100309

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100507

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100629

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100827

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101102

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101115

R151 Written notification of patent or utility model registration

Ref document number: 4640177

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131210

Year of fee payment: 3

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131210

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees