TWI365354B - - Google Patents
Info
- Publication number
- TWI365354B TWI365354B TW093128922A TW93128922A TWI365354B TW I365354 B TWI365354 B TW I365354B TW 093128922 A TW093128922 A TW 093128922A TW 93128922 A TW93128922 A TW 93128922A TW I365354 B TWI365354 B TW I365354B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Materials For Photolithography (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003331461 | 2003-09-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200512540A TW200512540A (en) | 2005-04-01 |
| TWI365354B true TWI365354B (https=) | 2012-06-01 |
Family
ID=34373042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093128922A TW200512540A (en) | 2003-09-24 | 2004-09-23 | Photosensitive element, method of forming resist pattern, and process for producing printed wiring board |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7622243B2 (https=) |
| JP (1) | JP4640177B2 (https=) |
| KR (2) | KR20060055547A (https=) |
| CN (1) | CN1856742B (https=) |
| TW (1) | TW200512540A (https=) |
| WO (1) | WO2005029188A1 (https=) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI795094B (zh) * | 2020-01-15 | 2023-03-01 | 美商蘭姆研究公司 | 處理設備、圖案化結構及其製造方法 |
| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| US12105422B2 (en) | 2019-06-26 | 2024-10-01 | Lam Research Corporation | Photoresist development with halide chemistries |
| US12125711B2 (en) | 2019-03-18 | 2024-10-22 | Lam Research Corporation | Reducing roughness of extreme ultraviolet lithography resists |
| US12183604B2 (en) | 2020-07-07 | 2024-12-31 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| US12211691B2 (en) | 2018-12-20 | 2025-01-28 | Lam Research Corporation | Dry development of resists |
| US12261044B2 (en) | 2020-02-28 | 2025-03-25 | Lam Research Corporation | Multi-layer hardmask for defect reduction in EUV patterning |
| US12315727B2 (en) | 2017-05-16 | 2025-05-27 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US12346035B2 (en) | 2020-11-13 | 2025-07-01 | Lam Research Corporation | Process tool for dry removal of photoresist |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
| US12504692B2 (en) | 2022-07-01 | 2025-12-23 | Lam Research Corporation | Cyclic development of metal oxide based photoresist for etch stop deterrence |
| US12577466B2 (en) | 2020-12-08 | 2026-03-17 | Lam Research Corporation | Photoresist development with organic vapor |
| US12586765B2 (en) | 2020-06-22 | 2026-03-24 | Lam Research Corporation | Surface modification for metal-containing photoresist deposition |
| US12601976B2 (en) | 2023-07-27 | 2026-04-14 | Lam Research Corporation | All-in-one dry development for metal-containing photoresist |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101141841B1 (ko) | 2005-10-25 | 2012-05-08 | 히다치 가세고교 가부시끼가이샤 | 감광성 수지 조성물, 이것을 이용한 감광성 엘리먼트,레지스트 패턴의 형성방법 및 프린트 배선판의 제조방법 |
| KR100951874B1 (ko) * | 2006-04-24 | 2010-04-12 | 주식회사 코오롱 | Ｌｄｉ용 드라이 필름 포토레지스트 수지 조성물 |
| TW200844652A (en) * | 2006-11-15 | 2008-11-16 | Taiyo Ink Mfg Co Ltd | Process for forming solder resist film and photosensitive composition |
| JP5153304B2 (ja) * | 2006-11-15 | 2013-02-27 | 太陽ホールディングス株式会社 | 感光性組成物 |
| US7838197B2 (en) * | 2006-11-15 | 2010-11-23 | Taiyo Ink Mfg. Co., Ltd. | Photosensitive composition |
| US7776509B2 (en) * | 2007-02-06 | 2010-08-17 | Canon Kabushiki Kaisha | Photosensitive compound, photosensitive composition, resist pattern forming method, and device production process |
| US7615332B2 (en) * | 2007-02-06 | 2009-11-10 | Canon Kabushiki Kaisha | Photosensitive compound, photosensitive composition, resist pattern forming method, and device production process |
| WO2009116401A1 (ja) * | 2008-03-17 | 2009-09-24 | 日立化成工業株式会社 | 感光性樹脂組成物、並びにこれを用いた感光性エレメント、ソルダーレジスト及びプリント配線板 |
| EP2562599B1 (en) | 2009-01-29 | 2014-12-10 | Digiflex Ltd. | Process for producing a photomask on a photopolymeric surface |
| CN101759814B (zh) * | 2009-12-25 | 2013-06-19 | 深圳市有为化学技术有限公司 | 单或双官能团硫杂蒽酮及含有该单或双官能团硫杂蒽酮的光引发剂 |
| CN111279804B (zh) * | 2017-12-20 | 2023-10-24 | 住友电气工业株式会社 | 制造印刷电路板和层压结构的方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2909994A1 (de) * | 1979-03-14 | 1980-10-02 | Basf Ag | Acylphosphinoxidverbindungen, ihre herstellung und verwendung |
| JPH01159637A (ja) * | 1987-12-16 | 1989-06-22 | Daicel Chem Ind Ltd | 感光性硬化組成物 |
| JPH0235454A (ja) * | 1988-07-25 | 1990-02-06 | Sekisui Chem Co Ltd | 感光性樹脂組成物 |
| JP2675345B2 (ja) * | 1988-08-29 | 1997-11-12 | 旭化成工業株式会社 | 感光性樹脂組成物 |
| JPH02113251A (ja) * | 1988-10-24 | 1990-04-25 | Hitachi Chem Co Ltd | 感光性樹脂組成物及びこれを用いた感光性エレメント |
| JP2726072B2 (ja) * | 1988-12-15 | 1998-03-11 | ダイセル化学工業株式会社 | 光重合性組成物 |
| JP2679193B2 (ja) * | 1988-12-15 | 1997-11-19 | ダイセル化学工業株式会社 | 光重合性組成物 |
| JP3366722B2 (ja) * | 1994-03-11 | 2003-01-14 | 旭化成株式会社 | 光硬化性樹脂積層体及びそれを用いるプリント配線板の製造方法 |
| US5922509A (en) | 1998-03-18 | 1999-07-13 | Morton International, Inc. | Photoimageable compositions having improved stripping properties in aqueous alkaline solutions |
| JP4014872B2 (ja) | 1999-06-24 | 2007-11-28 | 日立化成工業株式会社 | 感光性エレメント、感光性エレメントロール、これを用いたレジストパターンの製造法、レジストパターン、レジストパターン積層基板、配線パターンの製造法及び配線パターン |
| JP2001133968A (ja) * | 1999-11-09 | 2001-05-18 | Fuji Photo Film Co Ltd | 感光性組成物 |
| JP2001201851A (ja) | 2000-01-18 | 2001-07-27 | Asahi Kasei Corp | 光重合性樹脂組成物 |
| US6579914B1 (en) | 2000-07-14 | 2003-06-17 | Alcatel | Coating compositions for optical waveguides and optical waveguides coated therewith |
| JP2002351086A (ja) | 2001-03-22 | 2002-12-04 | Fuji Photo Film Co Ltd | 露光装置 |
| ES2324983T3 (es) * | 2001-08-21 | 2009-08-21 | Ciba Holding Inc. | Oxidos y sulfuros de mono- y bis- acilfosfina batocromicos y su utilizacion como fotoiniciadores. |
| JP2003262956A (ja) * | 2002-03-12 | 2003-09-19 | Hitachi Chem Co Ltd | 感光性樹脂組成物、これを用いた感光性エレメント、レジストパターンの製造法及びプリント配線板の製造法 |
| US7230122B2 (en) * | 2003-11-04 | 2007-06-12 | National Starch And Chemical Investment Holding Corporation | Sulfonium salt photinitiators and use thereof |
| KR20070004649A (ko) * | 2004-01-27 | 2007-01-09 | 시바 스페셜티 케미칼스 홀딩 인크. | 열적으로 안정한 양이온성 광경화성 조성물 |
-
2004
- 2004-09-17 CN CN2004800275719A patent/CN1856742B/zh not_active Expired - Fee Related
- 2004-09-17 KR KR1020067005557A patent/KR20060055547A/ko not_active Ceased
- 2004-09-17 KR KR1020087001994A patent/KR100907368B1/ko not_active Expired - Fee Related
- 2004-09-17 WO PCT/JP2004/013677 patent/WO2005029188A1/ja not_active Ceased
- 2004-09-17 US US10/572,859 patent/US7622243B2/en not_active Expired - Fee Related
- 2004-09-17 JP JP2005514066A patent/JP4640177B2/ja not_active Expired - Fee Related
- 2004-09-23 TW TW093128922A patent/TW200512540A/zh not_active IP Right Cessation
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12315727B2 (en) | 2017-05-16 | 2025-05-27 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| US12211691B2 (en) | 2018-12-20 | 2025-01-28 | Lam Research Corporation | Dry development of resists |
| US12125711B2 (en) | 2019-03-18 | 2024-10-22 | Lam Research Corporation | Reducing roughness of extreme ultraviolet lithography resists |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| US12510826B2 (en) | 2019-06-26 | 2025-12-30 | Lam Research Corporation | Photoresist development with halide chemistries |
| US12510825B2 (en) | 2019-06-26 | 2025-12-30 | Lam Research Corporation | Photoresist development with halide chemistries |
| US12105422B2 (en) | 2019-06-26 | 2024-10-01 | Lam Research Corporation | Photoresist development with halide chemistries |
| US11988965B2 (en) | 2020-01-15 | 2024-05-21 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| TWI795094B (zh) * | 2020-01-15 | 2023-03-01 | 美商蘭姆研究公司 | 處理設備、圖案化結構及其製造方法 |
| US12474638B2 (en) | 2020-01-15 | 2025-11-18 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| TWI828961B (zh) * | 2020-01-15 | 2024-01-11 | 美商蘭姆研究公司 | 圖案化結構及其製造方法、沉積底層之方法及處理基板之設備 |
| US12261044B2 (en) | 2020-02-28 | 2025-03-25 | Lam Research Corporation | Multi-layer hardmask for defect reduction in EUV patterning |
| US12586765B2 (en) | 2020-06-22 | 2026-03-24 | Lam Research Corporation | Surface modification for metal-containing photoresist deposition |
| US12278125B2 (en) | 2020-07-07 | 2025-04-15 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| US12183604B2 (en) | 2020-07-07 | 2024-12-31 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| US12346035B2 (en) | 2020-11-13 | 2025-07-01 | Lam Research Corporation | Process tool for dry removal of photoresist |
| US12577466B2 (en) | 2020-12-08 | 2026-03-17 | Lam Research Corporation | Photoresist development with organic vapor |
| US12504692B2 (en) | 2022-07-01 | 2025-12-23 | Lam Research Corporation | Cyclic development of metal oxide based photoresist for etch stop deterrence |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
| US12601976B2 (en) | 2023-07-27 | 2026-04-14 | Lam Research Corporation | All-in-one dry development for metal-containing photoresist |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2005029188A1 (ja) | 2007-11-15 |
| JP4640177B2 (ja) | 2011-03-02 |
| KR20080017492A (ko) | 2008-02-26 |
| KR20060055547A (ko) | 2006-05-23 |
| KR100907368B1 (ko) | 2009-07-10 |
| CN1856742A (zh) | 2006-11-01 |
| US20070105036A1 (en) | 2007-05-10 |
| WO2005029188A1 (ja) | 2005-03-31 |
| US7622243B2 (en) | 2009-11-24 |
| CN1856742B (zh) | 2010-11-24 |
| TW200512540A (en) | 2005-04-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |