JP4630629B2 - 発光装置の製造方法 - Google Patents

発光装置の製造方法 Download PDF

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Publication number
JP4630629B2
JP4630629B2 JP2004316007A JP2004316007A JP4630629B2 JP 4630629 B2 JP4630629 B2 JP 4630629B2 JP 2004316007 A JP2004316007 A JP 2004316007A JP 2004316007 A JP2004316007 A JP 2004316007A JP 4630629 B2 JP4630629 B2 JP 4630629B2
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JP
Japan
Prior art keywords
contact electrode
light emitting
led element
light
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004316007A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006128457A5 (enExample
JP2006128457A (ja
Inventor
好伸 末広
昌好 市川
聡 和田
浩二 田角
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2004316007A priority Critical patent/JP4630629B2/ja
Priority to US11/220,405 priority patent/US7417220B2/en
Publication of JP2006128457A publication Critical patent/JP2006128457A/ja
Publication of JP2006128457A5 publication Critical patent/JP2006128457A5/ja
Priority to US12/155,820 priority patent/US8017967B2/en
Application granted granted Critical
Publication of JP4630629B2 publication Critical patent/JP4630629B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2004316007A 2004-09-09 2004-10-29 発光装置の製造方法 Expired - Fee Related JP4630629B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004316007A JP4630629B2 (ja) 2004-10-29 2004-10-29 発光装置の製造方法
US11/220,405 US7417220B2 (en) 2004-09-09 2005-09-07 Solid state device and light-emitting element
US12/155,820 US8017967B2 (en) 2004-09-09 2008-06-10 Light-emitting element including a fusion-bonding portion on contact electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004316007A JP4630629B2 (ja) 2004-10-29 2004-10-29 発光装置の製造方法

Publications (3)

Publication Number Publication Date
JP2006128457A JP2006128457A (ja) 2006-05-18
JP2006128457A5 JP2006128457A5 (enExample) 2007-07-26
JP4630629B2 true JP4630629B2 (ja) 2011-02-09

Family

ID=36722829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004316007A Expired - Fee Related JP4630629B2 (ja) 2004-09-09 2004-10-29 発光装置の製造方法

Country Status (1)

Country Link
JP (1) JP4630629B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129739B2 (en) 2005-07-15 2012-03-06 Panasonic Corporation Semiconductor light emitting device and semiconductor light emitting device mounted board
JP5250856B2 (ja) 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP4979299B2 (ja) * 2006-08-03 2012-07-18 豊田合成株式会社 光学装置及びその製造方法
JP5329787B2 (ja) * 2007-09-28 2013-10-30 パナソニック株式会社 実装基板およびｌｅｄモジュール
JP5549190B2 (ja) * 2009-02-27 2014-07-16 豊田合成株式会社 半導体発光素子の実装体の製造方法、発光装置の製造方法及び半導体発光素子
DE102010054898A1 (de) * 2010-12-17 2012-06-21 Osram Opto Semiconductors Gmbh Träger für einen optoelektronischen Halbleiterchip und Halbleiterchip
WO2013161208A1 (ja) * 2012-04-27 2013-10-31 パナソニック株式会社 発光素子
JP6754921B1 (ja) 2018-12-14 2020-09-16 パナソニックセミコンダクターソリューションズ株式会社 半導体装置
JPWO2022004393A1 (enExample) * 2020-07-02 2022-01-06
US12408493B2 (en) 2021-05-26 2025-09-02 Nichia Corporation Light-emitting element including first semiconductor layer having exposed portion with first region and second regions
WO2023210082A1 (ja) * 2022-04-26 2023-11-02 日亜化学工業株式会社 発光素子及び発光装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730153A (ja) * 1993-07-14 1995-01-31 Hitachi Cable Ltd 発光ダイオードチップ、その台座、及び発光ダイオード
JP3811248B2 (ja) * 1997-03-10 2006-08-16 松下電器産業株式会社 半導体素子の基板への接合方法及び実装方法
US6514782B1 (en) * 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
JP4139634B2 (ja) * 2002-06-28 2008-08-27 松下電器産業株式会社 Ｌｅｄ照明装置およびその製造方法
JP2004082036A (ja) * 2002-08-28 2004-03-18 Ishigaki Co Ltd 加温式フイルタープレス
JP3703455B2 (ja) * 2002-12-13 2005-10-05 Ｎｅｃエレクトロニクス株式会社 二層バンプの形成方法
WO2004082036A1 (ja) * 2003-03-10 2004-09-23 Toyoda Gosei Co., Ltd. 固体素子デバイスおよびその製造方法

Also Published As

Publication number Publication date
JP2006128457A (ja) 2006-05-18

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