JP4628531B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4628531B2
JP4628531B2 JP2000258450A JP2000258450A JP4628531B2 JP 4628531 B2 JP4628531 B2 JP 4628531B2 JP 2000258450 A JP2000258450 A JP 2000258450A JP 2000258450 A JP2000258450 A JP 2000258450A JP 4628531 B2 JP4628531 B2 JP 4628531B2
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Japan
Prior art keywords
exposure means
semiconductor device
film
pattern
display device
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Expired - Fee Related
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JP2000258450A
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English (en)
Japanese (ja)
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JP2001142224A5 (enExample
JP2001142224A (ja
Inventor
学 勝村
志郎 磯田
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000258450A priority Critical patent/JP4628531B2/ja
Publication of JP2001142224A publication Critical patent/JP2001142224A/ja
Publication of JP2001142224A5 publication Critical patent/JP2001142224A5/ja
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Publication of JP4628531B2 publication Critical patent/JP4628531B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2000258450A 1999-08-31 2000-08-29 半導体装置の作製方法 Expired - Fee Related JP4628531B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000258450A JP4628531B2 (ja) 1999-08-31 2000-08-29 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24657299 1999-08-31
JP11-246572 1999-08-31
JP2000258450A JP4628531B2 (ja) 1999-08-31 2000-08-29 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001142224A JP2001142224A (ja) 2001-05-25
JP2001142224A5 JP2001142224A5 (enExample) 2007-10-25
JP4628531B2 true JP4628531B2 (ja) 2011-02-09

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Family Applications (1)

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JP2000258450A Expired - Fee Related JP4628531B2 (ja) 1999-08-31 2000-08-29 半導体装置の作製方法

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JP (1) JP4628531B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4634673B2 (ja) * 2001-09-26 2011-02-16 シャープ株式会社 液晶表示装置及びその製造方法
US6872658B2 (en) 2001-11-30 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device by exposing resist mask
JP4071611B2 (ja) * 2002-12-06 2008-04-02 東京応化工業株式会社 Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP2004342833A (ja) 2003-05-15 2004-12-02 Seiko Epson Corp 半導体装置の製造方法、電気光学装置、集積回路及び電子機器。
JP2005072573A (ja) * 2003-08-05 2005-03-17 Semiconductor Energy Lab Co Ltd 配線基板及びその作製方法、並びに半導体装置及びその作製方法
US7423343B2 (en) * 2003-08-05 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
JP5398158B2 (ja) * 2008-03-27 2014-01-29 三菱電機株式会社 パターン形成方法、及び配線構造、並びに電子機器
JP6240443B2 (ja) * 2012-09-17 2017-11-29 シチズンファインデバイス株式会社 液晶表示装置
US9853070B2 (en) 2014-12-09 2017-12-26 Sharp Kabushiki Kaisha Method of manufacturing display panel substrate
JP6650719B2 (ja) 2015-09-30 2020-02-19 キヤノン株式会社 撮像装置、撮像システムおよび半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50159267A (enExample) * 1974-06-12 1975-12-23
JPS6473616A (en) * 1987-09-14 1989-03-17 Nec Corp Manufacture of semiconductor device
JPH01134919A (ja) * 1987-11-19 1989-05-26 Nec Corp 光学投影露光装置
JPH08236433A (ja) * 1994-12-28 1996-09-13 Nikon Corp 露光方法
JP3892565B2 (ja) * 1997-02-28 2007-03-14 株式会社東芝 パターン形成方法
JP3101594B2 (ja) * 1997-11-06 2000-10-23 キヤノン株式会社 露光方法及び露光装置
JP3535770B2 (ja) * 1998-06-29 2004-06-07 キヤノン株式会社 露光方法及び露光装置
JP2000347416A (ja) * 1999-03-31 2000-12-15 Seiko Epson Corp 露光装置

Also Published As

Publication number Publication date
JP2001142224A (ja) 2001-05-25

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