JP4618990B2 - 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置 - Google Patents

有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置 Download PDF

Info

Publication number
JP4618990B2
JP4618990B2 JP2003284511A JP2003284511A JP4618990B2 JP 4618990 B2 JP4618990 B2 JP 4618990B2 JP 2003284511 A JP2003284511 A JP 2003284511A JP 2003284511 A JP2003284511 A JP 2003284511A JP 4618990 B2 JP4618990 B2 JP 4618990B2
Authority
JP
Japan
Prior art keywords
substrate
film
organic thin
conductive
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003284511A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004080026A5 (enExample
JP2004080026A (ja
Inventor
吉晴 平形
哲二 石谷
修次 深井
良太 今林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003284511A priority Critical patent/JP4618990B2/ja
Publication of JP2004080026A publication Critical patent/JP2004080026A/ja
Publication of JP2004080026A5 publication Critical patent/JP2004080026A5/ja
Application granted granted Critical
Publication of JP4618990B2 publication Critical patent/JP4618990B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2003284511A 2002-08-02 2003-07-31 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置 Expired - Fee Related JP4618990B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003284511A JP4618990B2 (ja) 2002-08-02 2003-07-31 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002225772 2002-08-02
JP2003284511A JP4618990B2 (ja) 2002-08-02 2003-07-31 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置

Publications (3)

Publication Number Publication Date
JP2004080026A JP2004080026A (ja) 2004-03-11
JP2004080026A5 JP2004080026A5 (enExample) 2006-09-07
JP4618990B2 true JP4618990B2 (ja) 2011-01-26

Family

ID=32032818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003284511A Expired - Fee Related JP4618990B2 (ja) 2002-08-02 2003-07-31 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置

Country Status (1)

Country Link
JP (1) JP4618990B2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100560796B1 (ko) 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
GB2418062A (en) * 2004-09-03 2006-03-15 Seiko Epson Corp An organic Field-Effect Transistor with a charge transfer injection layer
ATE518259T1 (de) * 2004-11-09 2011-08-15 Creator Technology Bv Selbstausgerichtetes verfahren zur herstellung organischer transistoren
EP1670079B1 (en) * 2004-12-08 2010-12-01 Samsung Mobile Display Co., Ltd. Method of forming a conductive pattern of a thin film transistor
KR101122231B1 (ko) * 2004-12-17 2012-03-19 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR101133767B1 (ko) * 2005-03-09 2012-04-09 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
JP4602920B2 (ja) * 2005-03-19 2010-12-22 三星モバイルディスプレイ株式會社 有機薄膜トランジスタ、それを備えた平板ディスプレイ装置、及び有機薄膜トランジスタの製造方法
US8053850B2 (en) 2005-06-30 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Minute structure, micromachine, organic transistor, electric appliance, and manufacturing method thereof
KR101209046B1 (ko) * 2005-07-27 2012-12-06 삼성디스플레이 주식회사 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법
KR101240656B1 (ko) * 2005-08-01 2013-03-08 삼성디스플레이 주식회사 평판표시장치와 평판표시장치의 제조방법
KR101197053B1 (ko) 2005-09-30 2012-11-06 삼성디스플레이 주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
JP2007129007A (ja) 2005-11-02 2007-05-24 Hitachi Ltd 有機半導体膜を有する半導体装置の製造方法
KR20070053060A (ko) 2005-11-19 2007-05-23 삼성전자주식회사 표시장치와 이의 제조방법
KR101219047B1 (ko) 2005-12-13 2013-01-07 삼성디스플레이 주식회사 표시장치와 이의 제조방법
KR20070063300A (ko) * 2005-12-14 2007-06-19 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
JP2007214015A (ja) * 2006-02-10 2007-08-23 Kokusai Kiban Zairyo Kenkyusho:Kk 水及び酸素の捕捉剤、有機電子デバイス
KR101189218B1 (ko) 2006-04-12 2012-10-09 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR101279296B1 (ko) 2006-04-17 2013-06-26 엘지디스플레이 주식회사 유기 반도체 구조물, 이의 제조 방법, 이를 이용한 유기박막 트랜지스터 및 이의 제조 방법 및 이를 이용한표시장치
JP5916976B2 (ja) * 2006-05-18 2016-05-11 コニカミノルタ株式会社 有機薄膜トランジスタの形成方法、及び有機薄膜トランジスタ
JP5036219B2 (ja) 2006-05-30 2012-09-26 株式会社日立製作所 有機薄膜トランジスタを有する半導体装置の製造方法
JP5521270B2 (ja) 2007-02-21 2014-06-11 凸版印刷株式会社 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、および薄膜トランジスタアレイを用いたアクティブマトリクス型ディスプレイ
JP2008277469A (ja) 2007-04-27 2008-11-13 Hitachi Ltd 感光性ｓａｍ膜の露光方法および半導体装置の製造方法
JP5277675B2 (ja) * 2007-07-11 2013-08-28 株式会社リコー 有機薄膜トランジスタの製造方法
JP2009105258A (ja) * 2007-10-24 2009-05-14 Konica Minolta Holdings Inc 薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置
JPWO2009087793A1 (ja) * 2008-01-11 2011-05-26 独立行政法人科学技術振興機構 電界効果トランジスタ、電界効果トランジスタの製造方法、中間体及び第２中間体
JP5464586B2 (ja) * 2010-03-02 2014-04-09 独立行政法人産業技術総合研究所 有機薄膜の製造方法及びそれを用いた有機デバイス
CN103119699B (zh) 2010-09-22 2016-08-17 凸版印刷株式会社 薄膜晶体管及其制造方法和图像显示装置
CN104662646B (zh) 2012-09-21 2018-01-09 凸版印刷株式会社 薄膜晶体管及其制造方法、图像显示装置
JP6274203B2 (ja) * 2013-03-08 2018-02-07 国立大学法人神戸大学 有機半導体薄膜の作製方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH086041A (ja) * 1994-06-22 1996-01-12 Matsushita Electric Ind Co Ltd 液晶表示素子およびその製造方法
US6033202A (en) * 1998-03-27 2000-03-07 Lucent Technologies Inc. Mold for non - photolithographic fabrication of microstructures
JP2000269504A (ja) * 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
JP2001244467A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd コプラナー型半導体装置とそれを用いた表示装置および製法

Also Published As

Publication number Publication date
JP2004080026A (ja) 2004-03-11

Similar Documents

Publication Publication Date Title
JP4618990B2 (ja) 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置
US7985967B2 (en) Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
US8502228B2 (en) Thin film transistor array, method for manufacturing the same, and active matrix type display using the same
US8445901B2 (en) Manufacturing method of semiconductor device
US7504709B2 (en) Electronic device, method of manufacturing an electronic device, and electronic apparatus
JP4946286B2 (ja) 薄膜トランジスタアレイ、それを用いた画像表示装置およびその駆動方法
JP4713818B2 (ja) 有機トランジスタの製造方法、及び有機ｅｌ表示装置の製造方法
JP5138927B2 (ja) フレキシブルｔｆｔ基板及びその製造方法とフレキシブルディスプレイ
US20070024766A1 (en) Organic thin film transistor display panel
KR20070111378A (ko) 박막 트랜지스터의 제조 방법 및 박막 트랜지스터 및디스플레이 장치
EP1715374B1 (en) Active matrix circuit, active matrix display and method for manufacturing the same
US9293719B2 (en) Semiconductor device, method of manufacturing the same, and electronic apparatus
KR100839684B1 (ko) 액정 표시 장치
JP4455517B2 (ja) 薄膜トランジスタの製造方法
US20070295960A1 (en) Semiconductor device, electro-optical device, electronic apparatus, and method of producing semiconductor device
JP4928926B2 (ja) インクジェットプリンティングシステム及びこれを用いた薄膜トランジスタ表示板の製造方法
JP2007281188A (ja) トランジスタ、画素電極基板、電気光学装置、電子機器及び半導体素子の製造方法
US7897216B2 (en) Method for manufacturing organic device and electronic apparatus
US20070290196A1 (en) Organic light emitting display device and method for manufacturing the organic light emitting display device
US8653527B2 (en) Thin film transistor and method for manufacturing the same
JP4602920B2 (ja) 有機薄膜トランジスタ、それを備えた平板ディスプレイ装置、及び有機薄膜トランジスタの製造方法
US20070262308A1 (en) Thin film transistor array panel and manufacturing method thereof
JP2008159934A (ja) フレキシブルｔｆｔ基板及びその製造方法とフレキシブルディスプレイ
JP2007193267A (ja) 薄膜トランジスタ装置及びその製造方法及び薄膜トランジスタアレイ及び薄膜トランジスタディスプレイ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060721

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060721

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090824

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100803

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100929

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101019

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101026

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131105

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131105

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees