JP4615631B2 - 面内に熱膨張率勾配を設計する方法 - Google Patents
面内に熱膨張率勾配を設計する方法 Download PDFInfo
- Publication number
- JP4615631B2 JP4615631B2 JP52141598A JP52141598A JP4615631B2 JP 4615631 B2 JP4615631 B2 JP 4615631B2 JP 52141598 A JP52141598 A JP 52141598A JP 52141598 A JP52141598 A JP 52141598A JP 4615631 B2 JP4615631 B2 JP 4615631B2
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- chip
- thermal expansion
- coefficient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01057—Lanthanum [La]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/745,597 | 1996-11-08 | ||
| US08/745,597 US5888630A (en) | 1996-11-08 | 1996-11-08 | Apparatus and method for unit area composition control to minimize warp in an integrated circuit chip package assembly |
| PCT/US1997/018639 WO1998020556A1 (en) | 1996-11-08 | 1997-10-17 | Method of increasing package reliability by designing in plane cte gradients |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010178017A Division JP5491316B2 (ja) | 1996-11-08 | 2010-08-06 | パッケージの信頼性を高める方法、層状構造及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000505246A JP2000505246A (ja) | 2000-04-25 |
| JP2000505246A5 JP2000505246A5 (enExample) | 2005-06-16 |
| JP4615631B2 true JP4615631B2 (ja) | 2011-01-19 |
Family
ID=24997393
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52141598A Expired - Lifetime JP4615631B2 (ja) | 1996-11-08 | 1997-10-17 | 面内に熱膨張率勾配を設計する方法 |
| JP2010178017A Expired - Lifetime JP5491316B2 (ja) | 1996-11-08 | 2010-08-06 | パッケージの信頼性を高める方法、層状構造及びその製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010178017A Expired - Lifetime JP5491316B2 (ja) | 1996-11-08 | 2010-08-06 | パッケージの信頼性を高める方法、層状構造及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US5888630A (enExample) |
| JP (2) | JP4615631B2 (enExample) |
| AU (1) | AU4758497A (enExample) |
| WO (1) | WO1998020556A1 (enExample) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5778523A (en) * | 1996-11-08 | 1998-07-14 | W. L. Gore & Associates, Inc. | Method for controlling warp of electronic assemblies by use of package stiffener |
| SG82591A1 (en) * | 1998-12-17 | 2001-08-21 | Eriston Technologies Pte Ltd | Bumpless flip chip assembly with solder via |
| US7531417B2 (en) * | 1998-12-21 | 2009-05-12 | Megica Corporation | High performance system-on-chip passive device using post passivation process |
| US6869870B2 (en) * | 1998-12-21 | 2005-03-22 | Megic Corporation | High performance system-on-chip discrete components using post passivation process |
| US8421158B2 (en) * | 1998-12-21 | 2013-04-16 | Megica Corporation | Chip structure with a passive device and method for forming the same |
| US8178435B2 (en) | 1998-12-21 | 2012-05-15 | Megica Corporation | High performance system-on-chip inductor using post passivation process |
| US6303423B1 (en) * | 1998-12-21 | 2001-10-16 | Megic Corporation | Method for forming high performance system-on-chip using post passivation process |
| US6492600B1 (en) * | 1999-06-28 | 2002-12-10 | International Business Machines Corporation | Laminate having plated microvia interconnects and method for forming the same |
| US6350623B1 (en) * | 1999-10-29 | 2002-02-26 | California Institute Of Technology | Method of forming intermediate structures in porous substrates in which electrical and optical microdevices are fabricated and intermediate structures formed by the same |
| US6370013B1 (en) * | 1999-11-30 | 2002-04-09 | Kyocera Corporation | Electric element incorporating wiring board |
| US6329227B2 (en) * | 2000-02-22 | 2001-12-11 | Matsushita Electric Industrial Co., Ltd. | Method of patterning organic polymer film and method for fabricating semiconductor device |
| US6930256B1 (en) * | 2002-05-01 | 2005-08-16 | Amkor Technology, Inc. | Integrated circuit substrate having laser-embedded conductive patterns and method therefor |
| US6847527B2 (en) * | 2001-08-24 | 2005-01-25 | 3M Innovative Properties Company | Interconnect module with reduced power distribution impedance |
| US6759275B1 (en) | 2001-09-04 | 2004-07-06 | Megic Corporation | Method for making high-performance RF integrated circuits |
| US6992379B2 (en) | 2001-09-05 | 2006-01-31 | International Business Machines Corporation | Electronic package having a thermal stretching layer |
| US7670962B2 (en) | 2002-05-01 | 2010-03-02 | Amkor Technology, Inc. | Substrate having stiffener fabrication method |
| US7548430B1 (en) | 2002-05-01 | 2009-06-16 | Amkor Technology, Inc. | Buildup dielectric and metallization process and semiconductor package |
| US7399661B2 (en) | 2002-05-01 | 2008-07-15 | Amkor Technology, Inc. | Method for making an integrated circuit substrate having embedded back-side access conductors and vias |
| US9691635B1 (en) | 2002-05-01 | 2017-06-27 | Amkor Technology, Inc. | Buildup dielectric layer having metallization pattern semiconductor package fabrication method |
| JP2004047669A (ja) * | 2002-07-11 | 2004-02-12 | Mitsubishi Engineering Plastics Corp | 樹脂容器 |
| US20040104463A1 (en) * | 2002-09-27 | 2004-06-03 | Gorrell Robin E. | Crack resistant interconnect module |
| US6737158B1 (en) * | 2002-10-30 | 2004-05-18 | Gore Enterprise Holdings, Inc. | Porous polymeric membrane toughened composites |
| US6806563B2 (en) * | 2003-03-20 | 2004-10-19 | International Business Machines Corporation | Composite capacitor and stiffener for chip carrier |
| DE50306458D1 (de) * | 2003-03-28 | 2007-03-22 | Agfa Gevaert Healthcare Gmbh | Vorrichtung zum Erfassen von in einer Phosphorschicht enthaltenen Bildinformationen |
| JP3848288B2 (ja) * | 2003-04-25 | 2006-11-22 | キヤノン株式会社 | 放射線画像撮影装置 |
| TWI236763B (en) * | 2003-05-27 | 2005-07-21 | Megic Corp | High performance system-on-chip inductor using post passivation process |
| US10811277B2 (en) | 2004-03-23 | 2020-10-20 | Amkor Technology, Inc. | Encapsulated semiconductor package |
| US11081370B2 (en) | 2004-03-23 | 2021-08-03 | Amkor Technology Singapore Holding Pte. Ltd. | Methods of manufacturing an encapsulated semiconductor device |
| US7145238B1 (en) | 2004-05-05 | 2006-12-05 | Amkor Technology, Inc. | Semiconductor package and substrate having multi-level vias |
| US8008775B2 (en) | 2004-09-09 | 2011-08-30 | Megica Corporation | Post passivation interconnection structures |
| US7355282B2 (en) | 2004-09-09 | 2008-04-08 | Megica Corporation | Post passivation interconnection process and structures |
| JP4588502B2 (ja) * | 2005-03-17 | 2010-12-01 | 富士通株式会社 | プリント配線基板設計支援装置、プリント配線基板設計支援方法、及びプリント配線基板設計支援プログラム |
| US8384189B2 (en) * | 2005-03-29 | 2013-02-26 | Megica Corporation | High performance system-on-chip using post passivation process |
| US8826531B1 (en) | 2005-04-05 | 2014-09-09 | Amkor Technology, Inc. | Method for making an integrated circuit substrate having laminated laser-embedded circuit layers |
| US7523549B1 (en) * | 2005-04-15 | 2009-04-28 | Magnecomp Corporation | Dimensionally stabilized flexible circuit fabrication method and product |
| US20060270106A1 (en) * | 2005-05-31 | 2006-11-30 | Tz-Cheng Chiu | System and method for polymer encapsulated solder lid attach |
| US7960269B2 (en) * | 2005-07-22 | 2011-06-14 | Megica Corporation | Method for forming a double embossing structure |
| US7589398B1 (en) | 2006-10-04 | 2009-09-15 | Amkor Technology, Inc. | Embedded metal features structure |
| US7752752B1 (en) | 2007-01-09 | 2010-07-13 | Amkor Technology, Inc. | Method of fabricating an embedded circuit pattern |
| KR101142881B1 (ko) * | 2007-03-07 | 2012-05-10 | 후지쯔 가부시끼가이샤 | 해석 장치, 해석 방법 및 해석 프로그램을 기록한 컴퓨터로 판독가능한 기록 매체 |
| US20110212257A1 (en) * | 2008-02-18 | 2011-09-01 | Princo Corp. | Method to decrease warpage of a multi-layer substrate and structure thereof |
| US20110212307A1 (en) * | 2008-02-18 | 2011-09-01 | Princo Corp. | Method to decrease warpage of a multi-layer substrate and structure thereof |
| TWI432121B (zh) * | 2008-02-18 | 2014-03-21 | Princo Corp | 平衡多層基板應力之方法及多層基板結構 |
| EP2270851B1 (en) * | 2008-03-31 | 2016-12-28 | Princo Corp. | Method of balancing multilayer substrate stress and multilayer substrate |
| DE102008052244A1 (de) * | 2008-10-18 | 2010-04-22 | Carl Freudenberg Kg | Flexible Leiterplatte |
| US8872329B1 (en) | 2009-01-09 | 2014-10-28 | Amkor Technology, Inc. | Extended landing pad substrate package structure and method |
| US8399773B2 (en) * | 2009-01-27 | 2013-03-19 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
| JP5476772B2 (ja) * | 2009-04-06 | 2014-04-23 | 住友ベークライト株式会社 | プリプレグおよび積層板 |
| US8976529B2 (en) * | 2011-01-14 | 2015-03-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lid design for reliability enhancement in flip chip package |
| US9755706B2 (en) | 2012-06-22 | 2017-09-05 | Qualcomm Incorporated | Techniques for joint support of coordinated multipoint (CoMP) operations and carrier aggregation (CA) |
| US9275876B2 (en) | 2013-09-30 | 2016-03-01 | Qualcomm Incorporated | Stiffener with embedded passive components |
| CN105378912B (zh) * | 2014-06-09 | 2018-12-28 | 三菱电机株式会社 | 半导体封装件的制造方法以及半导体封装件 |
| US9563732B1 (en) * | 2016-01-26 | 2017-02-07 | International Business Machines Corporation | In-plane copper imbalance for warpage prediction |
| US10108753B2 (en) | 2016-06-07 | 2018-10-23 | International Business Machines Corporation | Laminate substrate thermal warpage prediction for designing a laminate substrate |
| JP7325194B2 (ja) * | 2019-02-19 | 2023-08-14 | 三菱重工業株式会社 | 溶接物製造方法、溶接物製造システム及び溶接物 |
| US11723154B1 (en) | 2020-02-17 | 2023-08-08 | Nicholas J. Chiolino | Multiwire plate-enclosed ball-isolated single-substrate silicon-carbide-die package |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3265806A (en) | 1965-04-05 | 1966-08-09 | Sprague Electric Co | Encapsulated flat package for electronic parts |
| SE392582B (sv) * | 1970-05-21 | 1977-04-04 | Gore & Ass | Forfarande vid framstellning av ett porost material, genom expandering och streckning av en tetrafluoretenpolymer framstelld i ett pastabildande strengsprutningsforfarande |
| JPS612028Y2 (enExample) * | 1980-05-24 | 1986-01-23 | ||
| US4496793A (en) | 1980-06-25 | 1985-01-29 | General Electric Company | Multi-layer metal core circuit board laminate with a controlled thermal coefficient of expansion |
| US4385202A (en) * | 1980-09-25 | 1983-05-24 | Texas Instruments Incorporated | Electronic circuit interconnection system |
| GB2090072B (en) | 1980-12-12 | 1985-01-03 | Ultra Electronic Controls Ltd | Package for electronic components |
| US4482516A (en) * | 1982-09-10 | 1984-11-13 | W. L. Gore & Associates, Inc. | Process for producing a high strength porous polytetrafluoroethylene product having a coarse microstructure |
| US4591659A (en) | 1983-12-22 | 1986-05-27 | Trw Inc. | Multilayer printed circuit board structure |
| EP0151490B1 (en) * | 1984-02-09 | 1991-01-16 | Toyota Jidosha Kabushiki Kaisha | Process for producing ultra-fine ceramic particles |
| US4745457A (en) | 1984-07-30 | 1988-05-17 | General Electric Company | Electronic substrate article and method of preparation |
| US4770922A (en) | 1987-04-13 | 1988-09-13 | Japan Gore-Tex, Inc. | Printed circuit board base material |
| US4806704A (en) | 1987-06-08 | 1989-02-21 | General Electric Company | Metal matrix composite and structure using metal matrix composites for electronic applications |
| US4963697A (en) * | 1988-02-12 | 1990-10-16 | Texas Instruments Incorporated | Advanced polymers on metal printed wiring board |
| US4915981A (en) * | 1988-08-12 | 1990-04-10 | Rogers Corporation | Method of laser drilling fluoropolymer materials |
| US5108843A (en) * | 1988-11-30 | 1992-04-28 | Ricoh Company, Ltd. | Thin film semiconductor and process for producing the same |
| US4985296A (en) * | 1989-03-16 | 1991-01-15 | W. L. Gore & Associates, Inc. | Polytetrafluoroethylene film |
| US4996097A (en) | 1989-03-16 | 1991-02-26 | W. L. Gore & Associates, Inc. | High capacitance laminates |
| US5079069A (en) | 1989-08-23 | 1992-01-07 | Zycon Corporation | Capacitor laminate for use in capacitive printed circuit boards and methods of manufacture |
| US5155655A (en) | 1989-08-23 | 1992-10-13 | Zycon Corporation | Capacitor laminate for use in capacitive printed circuit boards and methods of manufacture |
| US5161086A (en) | 1989-08-23 | 1992-11-03 | Zycon Corporation | Capacitor laminate for use in capacitive printed circuit boards and methods of manufacture |
| JP2574902B2 (ja) * | 1989-09-20 | 1997-01-22 | 株式会社日立製作所 | 半導体装置 |
| US4992318A (en) * | 1989-10-26 | 1991-02-12 | Corning Incorporated | Laminated hybrid ceramic matrix composites |
| US4992628A (en) | 1990-05-07 | 1991-02-12 | Kyocera America, Inc. | Ceramic-glass integrated circuit package with ground plane |
| US5250844A (en) | 1990-09-17 | 1993-10-05 | Motorola, Inc. | Multiple power/ground planes for tab |
| JP2924177B2 (ja) * | 1990-11-30 | 1999-07-26 | 株式会社村田製作所 | 傾斜機能型回路用基板 |
| US5103293A (en) | 1990-12-07 | 1992-04-07 | International Business Machines Corporation | Electronic circuit packages with tear resistant organic cores |
| JP2749472B2 (ja) * | 1991-12-24 | 1998-05-13 | 株式会社日立製作所 | 多層薄膜配線基板、該基板を用いたモジュール |
| JPH05245656A (ja) * | 1992-03-09 | 1993-09-24 | Sumitomo Metal Ind Ltd | 異方性金属素材から等方性金属積層体を製造する方法 |
| US5261153A (en) | 1992-04-06 | 1993-11-16 | Zycon Corporation | In situ method for forming a capacitive PCB |
| JPH0637204A (ja) * | 1992-07-20 | 1994-02-10 | Nippon Cement Co Ltd | 凹部付き回路内蔵型セラミックス多層配線基板の配線構造 |
| JPH06291216A (ja) * | 1993-04-05 | 1994-10-18 | Sony Corp | 基板及びセラミックパッケージ |
| JPH06291432A (ja) * | 1993-04-05 | 1994-10-18 | Ngk Spark Plug Co Ltd | ムライトセラミック基板及びその製造方法 |
| US5545473A (en) * | 1994-02-14 | 1996-08-13 | W. L. Gore & Associates, Inc. | Thermally conductive interface |
| US5571608A (en) * | 1994-07-15 | 1996-11-05 | Dell Usa, L.P. | Apparatus and method of making laminate an embedded conductive layer |
| JPH0846073A (ja) | 1994-07-28 | 1996-02-16 | Mitsubishi Electric Corp | 半導体装置 |
| JPH08186344A (ja) * | 1994-11-02 | 1996-07-16 | Nippon Steel Corp | プリント基板およびその製造法ならびに該基板を使用したプリント回路アセンブリ |
| JPH08167675A (ja) * | 1994-12-14 | 1996-06-25 | Hitachi Ltd | 半導体装置及びそれを用いた電子装置 |
| US5821619A (en) * | 1995-12-07 | 1998-10-13 | Dallas Semiconductor Corp. | Replaceable power module |
| US5778523A (en) * | 1996-11-08 | 1998-07-14 | W. L. Gore & Associates, Inc. | Method for controlling warp of electronic assemblies by use of package stiffener |
| US5838063A (en) * | 1996-11-08 | 1998-11-17 | W. L. Gore & Associates | Method of increasing package reliability using package lids with plane CTE gradients |
| US5900312A (en) * | 1996-11-08 | 1999-05-04 | W. L. Gore & Associates, Inc. | Integrated circuit chip package assembly |
| US5868887A (en) * | 1996-11-08 | 1999-02-09 | W. L. Gore & Associates, Inc. | Method for minimizing warp and die stress in the production of an electronic assembly |
| US5988488A (en) * | 1997-09-02 | 1999-11-23 | Mcdonnell Douglas Corporation | Process of bonding copper and tungsten |
| US5919329A (en) * | 1997-10-14 | 1999-07-06 | Gore Enterprise Holdings, Inc. | Method for assembling an integrated circuit chip package having at least one semiconductor device |
-
1996
- 1996-11-08 US US08/745,597 patent/US5888630A/en not_active Expired - Lifetime
-
1997
- 1997-10-17 AU AU47584/97A patent/AU4758497A/en not_active Abandoned
- 1997-10-17 JP JP52141598A patent/JP4615631B2/ja not_active Expired - Lifetime
- 1997-10-17 WO PCT/US1997/018639 patent/WO1998020556A1/en not_active Ceased
-
1998
- 1998-11-18 US US09/195,052 patent/US6184589B1/en not_active Expired - Lifetime
- 1998-11-20 US US09/196,681 patent/US6127250A/en not_active Expired - Lifetime
-
2010
- 2010-08-06 JP JP2010178017A patent/JP5491316B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5888630A (en) | 1999-03-30 |
| JP5491316B2 (ja) | 2014-05-14 |
| AU4758497A (en) | 1998-05-29 |
| JP2011018911A (ja) | 2011-01-27 |
| US6127250A (en) | 2000-10-03 |
| US6184589B1 (en) | 2001-02-06 |
| JP2000505246A (ja) | 2000-04-25 |
| WO1998020556A1 (en) | 1998-05-14 |
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