JP4613395B2 - 半導体レーザ素子及びその製造方法 - Google Patents

半導体レーザ素子及びその製造方法 Download PDF

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Publication number
JP4613395B2
JP4613395B2 JP2000174539A JP2000174539A JP4613395B2 JP 4613395 B2 JP4613395 B2 JP 4613395B2 JP 2000174539 A JP2000174539 A JP 2000174539A JP 2000174539 A JP2000174539 A JP 2000174539A JP 4613395 B2 JP4613395 B2 JP 4613395B2
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convex portion
stripe
etching
substrate
resonator
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JP2001358404A5 (enExample
JP2001358404A (ja
Inventor
拓明 松村
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Nichia Corp
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Nichia Corp
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JP2000174539A 2000-06-09 2000-06-09 半導体レーザ素子及びその製造方法 Expired - Fee Related JP4613395B2 (ja)

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JP2000174539A JP4613395B2 (ja) 2000-06-09 2000-06-09 半導体レーザ素子及びその製造方法

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JP2000174539A JP4613395B2 (ja) 2000-06-09 2000-06-09 半導体レーザ素子及びその製造方法

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JP2001358404A JP2001358404A (ja) 2001-12-26
JP2001358404A5 JP2001358404A5 (enExample) 2007-07-26
JP4613395B2 true JP4613395B2 (ja) 2011-01-19

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4889930B2 (ja) * 2004-08-27 2012-03-07 シャープ株式会社 窒化物半導体レーザ素子の製造方法
JP2009164234A (ja) * 2007-12-28 2009-07-23 Rohm Co Ltd 窒化物半導体レーザ素子
JP2009188273A (ja) 2008-02-07 2009-08-20 Rohm Co Ltd ジャンクションダウン型の光半導体素子及び光半導体装置
JP2012083473A (ja) * 2010-10-08 2012-04-26 Anritsu Corp 光ゲート素子
JP6409614B2 (ja) 2015-02-23 2018-10-24 日亜化学工業株式会社 半導体素子の製造方法及び半導体素子
JP6700019B2 (ja) * 2015-10-20 2020-05-27 スタンレー電気株式会社 半導体発光素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05327113A (ja) * 1992-05-20 1993-12-10 Oki Electric Ind Co Ltd 半導体レーザ素子
JPH09266351A (ja) * 1996-03-28 1997-10-07 Fuji Photo Film Co Ltd ＡｌＩｎＧａＮ系半導体発光素子
JPH11340573A (ja) * 1998-05-28 1999-12-10 Sharp Corp 窒化ガリウム系半導体レーザ素子

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