JP4610080B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4610080B2
JP4610080B2 JP2000392000A JP2000392000A JP4610080B2 JP 4610080 B2 JP4610080 B2 JP 4610080B2 JP 2000392000 A JP2000392000 A JP 2000392000A JP 2000392000 A JP2000392000 A JP 2000392000A JP 4610080 B2 JP4610080 B2 JP 4610080B2
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Japan
Prior art keywords
film
forming
insulating film
substrate
semiconductor layer
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Expired - Fee Related
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JP2000392000A
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English (en)
Japanese (ja)
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JP2002198364A (ja
JP2002198364A5 (enExample
Inventor
直澄 藤原
勇臣 浅見
充弘 一條
聡志 鳥海
陽子 金久保
麻由 ▲ひろ▼瀬
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000392000A priority Critical patent/JP4610080B2/ja
Publication of JP2002198364A publication Critical patent/JP2002198364A/ja
Publication of JP2002198364A5 publication Critical patent/JP2002198364A5/ja
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  • Chemical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
JP2000392000A 2000-12-25 2000-12-25 半導体装置の作製方法 Expired - Fee Related JP4610080B2 (ja)

Priority Applications (1)

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JP2000392000A JP4610080B2 (ja) 2000-12-25 2000-12-25 半導体装置の作製方法

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JP2000392000A JP4610080B2 (ja) 2000-12-25 2000-12-25 半導体装置の作製方法

Publications (3)

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JP2002198364A JP2002198364A (ja) 2002-07-12
JP2002198364A5 JP2002198364A5 (enExample) 2007-11-22
JP4610080B2 true JP4610080B2 (ja) 2011-01-12

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JP2000392000A Expired - Fee Related JP4610080B2 (ja) 2000-12-25 2000-12-25 半導体装置の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1313867C (zh) * 2002-09-17 2007-05-02 统宝光电股份有限公司 制造薄膜晶体管液晶显示器的绝缘薄膜的组合设备
JP4135541B2 (ja) * 2003-03-26 2008-08-20 ソニー株式会社 プラズマ表面処理方法
JP2007123174A (ja) * 2005-10-31 2007-05-17 Canon Inc 有機エレクトロルミネッセンス素子
JP2007123173A (ja) * 2005-10-31 2007-05-17 Canon Inc 有機エレクトロルミネッセンス素子
JPWO2009104531A1 (ja) * 2008-02-19 2011-06-23 株式会社アルバック 成膜方法
KR20180118803A (ko) * 2011-10-07 2018-10-31 어플라이드 머티어리얼스, 인코포레이티드 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들
JP6370048B2 (ja) * 2013-01-21 2018-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN105977179A (zh) * 2016-05-31 2016-09-28 宁夏银星能源光伏发电设备制造有限公司 一种管式pecvd膜厚的计算方法
WO2019060069A1 (en) * 2017-09-21 2019-03-28 Applied Materials, Inc. High aspect ratio deposition
JP6838677B1 (ja) * 2020-05-11 2021-03-03 信越半導体株式会社 半導体基板のドライエッチング方法及びシリコン酸化膜のドライエッチング方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03259512A (ja) * 1990-03-09 1991-11-19 Fujitsu Ltd 高周波プラズマ化学気相成長装置
JPH07183236A (ja) * 1993-11-11 1995-07-21 Nissin Electric Co Ltd プラズマｃｖｄ法及び装置
JP3520577B2 (ja) * 1994-10-25 2004-04-19 株式会社日立製作所 プラズマ処理装置
JP2820070B2 (ja) * 1995-08-11 1998-11-05 日本電気株式会社 プラズマ化学気相成長法とその装置
JP2743895B2 (ja) * 1995-12-22 1998-04-22 日本電気株式会社 半導体装置の製造方法
JPH09263948A (ja) * 1996-03-29 1997-10-07 Toshiba Corp プラズマを用いた薄膜形成方法、薄膜製造装置、エッチング方法、及びエッチング装置
JPH10163317A (ja) * 1996-11-28 1998-06-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3562357B2 (ja) * 1998-12-22 2004-09-08 セイコーエプソン株式会社 半導体装置の製造方法
JP3533968B2 (ja) * 1998-12-22 2004-06-07 セイコーエプソン株式会社 半導体装置の製造方法
JP3827056B2 (ja) * 1999-03-17 2006-09-27 キヤノンマーケティングジャパン株式会社 層間絶縁膜の形成方法及び半導体装置

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