JP4600178B2 - 素子の転写方法及び素子の転写装置 - Google Patents

素子の転写方法及び素子の転写装置 Download PDF

Info

Publication number
JP4600178B2
JP4600178B2 JP2005183936A JP2005183936A JP4600178B2 JP 4600178 B2 JP4600178 B2 JP 4600178B2 JP 2005183936 A JP2005183936 A JP 2005183936A JP 2005183936 A JP2005183936 A JP 2005183936A JP 4600178 B2 JP4600178 B2 JP 4600178B2
Authority
JP
Japan
Prior art keywords
laser beam
laser
transfer
irradiation
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005183936A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006041500A5 (enExample
JP2006041500A (ja
Inventor
正人 土居
豊治 大畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2005183936A priority Critical patent/JP4600178B2/ja
Publication of JP2006041500A publication Critical patent/JP2006041500A/ja
Publication of JP2006041500A5 publication Critical patent/JP2006041500A5/ja
Application granted granted Critical
Publication of JP4600178B2 publication Critical patent/JP4600178B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)
  • Lasers (AREA)
  • Led Devices (AREA)
JP2005183936A 2004-06-23 2005-06-23 素子の転写方法及び素子の転写装置 Expired - Fee Related JP4600178B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005183936A JP4600178B2 (ja) 2004-06-23 2005-06-23 素子の転写方法及び素子の転写装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004184927 2004-06-23
JP2005183936A JP4600178B2 (ja) 2004-06-23 2005-06-23 素子の転写方法及び素子の転写装置

Publications (3)

Publication Number Publication Date
JP2006041500A JP2006041500A (ja) 2006-02-09
JP2006041500A5 JP2006041500A5 (enExample) 2008-06-19
JP4600178B2 true JP4600178B2 (ja) 2010-12-15

Family

ID=35540897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005183936A Expired - Fee Related JP4600178B2 (ja) 2004-06-23 2005-06-23 素子の転写方法及び素子の転写装置

Country Status (2)

Country Link
US (1) US7744770B2 (enExample)
JP (1) JP4600178B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020255497A1 (ja) * 2019-06-17 2020-12-24 東レエンジニアリング株式会社 レーザ加工装置および方法、チップ転写装置および方法
US11437541B2 (en) 2019-05-08 2022-09-06 Samsung Electronics Co., Ltd. Transfer apparatus and method of manufacturing micro LED display using the same

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7744717B2 (en) * 2006-07-17 2010-06-29 E. I. Du Pont De Nemours And Company Process for enhancing the resolution of a thermally transferred pattern
KR101563237B1 (ko) * 2007-06-01 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조장치 및 발광장치 제작방법
US8735218B2 (en) * 2008-12-13 2014-05-27 Muehlbauer Ag Method and apparatus for manufacturing an electronic assembly, electronic assembly manufactured with the method or in the apparatus
JP2010249966A (ja) 2009-04-14 2010-11-04 Hitachi Ltd 光学エンジン
JP2011216689A (ja) * 2010-03-31 2011-10-27 Panasonic Electric Works Co Ltd 強誘電体デバイスの製造方法
KR101963421B1 (ko) 2011-04-11 2019-03-28 엔디에스유 리서치 파운데이션 별개의 구성요소의 선택적인 레이저 보조 전사
CN102231367B (zh) * 2011-04-26 2013-04-24 哈尔滨工业大学 扫描式薄膜图形激光转移方法
DE112012002487T5 (de) * 2011-06-15 2014-03-13 Asahi Glass Company, Limited Verfahren zum Schneiden einer Glasplatte
US9931712B2 (en) * 2012-01-11 2018-04-03 Pim Snow Leopard Inc. Laser drilling and trepanning device
CN106597697A (zh) 2013-12-02 2017-04-26 株式会社半导体能源研究所 显示装置及其制造方法
EP2944413A1 (de) * 2014-05-12 2015-11-18 Boegli-Gravures S.A. Vorrichtung zur Maskenprojektion von Femtosekunden- und Pikosekunden- Laserstrahlen mit einer Blende, einer Maske und Linsensystemen
US11756982B2 (en) 2016-06-10 2023-09-12 Applied Materials, Inc. Methods of parallel transfer of micro-devices using mask layer
US11776989B2 (en) 2016-06-10 2023-10-03 Applied Materials, Inc. Methods of parallel transfer of micro-devices using treatment
US10153325B2 (en) * 2016-06-10 2018-12-11 Applied Materials, Inc. Maskless parallel pick-and-place transfer of micro-devices
DE102016011747B4 (de) * 2016-09-29 2018-06-07 Mühlbauer Gmbh & Co. Kg Vorrichtung und Verfahren zum berührungslosen Übertragen von zumindest teilweise ferromagnetischen elektronischen Bauteilen von einem Träger zu einem Subtrat
DE102016221533B4 (de) 2016-11-03 2018-09-20 Mühlbauer Gmbh & Co. Kg Verfahren und Vorrichtung zum Transfer elektronischer Komponenten von einem Trägersubstrat auf ein Zwischenträgersubstrat
US11060193B2 (en) * 2016-11-23 2021-07-13 Institut National De La Recherche Scientifique Method and system of laser-driven impact acceleration
JP2018098441A (ja) * 2016-12-16 2018-06-21 株式会社ディスコ ダイボンダー
EP3639297A4 (en) 2017-06-12 2021-01-20 Uniqarta, Inc. PARALLEL MOUNTING OF DISCREET COMPONENTS ON A SUBSTRATE
TW201917811A (zh) * 2017-06-26 2019-05-01 美商特索羅科學有限公司 發光二極體質量傳遞設備及製造方法
US20190043843A1 (en) * 2017-08-01 2019-02-07 Innolux Corporation Methods for manufacturing a display device
EP3487269A1 (en) * 2017-11-21 2019-05-22 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Light induced selective transfer of components
CN108470698B (zh) * 2018-03-27 2021-06-11 唐人制造（宁波）有限公司 一种工件对准贴装装置及其方法
CN109524512B (zh) * 2018-11-15 2020-07-03 华中科技大学 基于可控微反射镜阵列的微型发光二极管巨量转移方法
JP6911003B2 (ja) 2018-12-14 2021-07-28 Tdk株式会社 素子アレイの製造方法と特定素子の除去方法
JP7319044B2 (ja) 2018-12-14 2023-08-01 Tdk株式会社 素子アレイの製造装置と特定素子の除去装置
WO2020188780A1 (ja) * 2019-03-19 2020-09-24 タカノ株式会社 レーザー転写装置、及び、レーザー転写方法
CN115004350B (zh) * 2019-06-11 2025-10-28 库力索法荷兰有限公司 利用光学系统特性的调整的分立组件装配体的位置误差补偿
KR102329818B1 (ko) * 2019-10-21 2021-11-22 한국기계연구원 능동 멀티빔 생성 기반 선택적 레이저 전사 장치 및 방법
KR102783318B1 (ko) * 2019-12-12 2025-03-19 토레이 엔지니어링 컴퍼니, 리미티드 집광 렌즈의 높이 조정 방법 및 칩 전사 방법 그리고 집광 렌즈의 높이 조정 장치 및 칩 전사 장치
JP7491778B2 (ja) * 2019-12-26 2024-05-28 信越化学工業株式会社 走査型縮小投影光学系及びこれを用いたレーザ加工装置
JP2021118284A (ja) * 2020-01-28 2021-08-10 東レエンジニアリング株式会社 チップ転写装置
KR102754349B1 (ko) * 2020-03-20 2025-01-14 삼성전자주식회사 디스플레이 모듈 및 디스플레이 모듈의 리페어 방법
CN115335974A (zh) * 2020-03-23 2022-11-11 东丽工程株式会社 安装方法、安装装置以及转印装置
KR102416253B1 (ko) * 2020-09-16 2022-07-05 (주)에스티아이 발광 소자를 구비한 표시 장치의 개보수 장치
TWM642187U (zh) 2020-09-29 2023-06-11 日商信越化學工業股份有限公司 元件的移載系統、設置有基板的元件移載機、對象物的移載系統以及設置有基板的對象物的移載機
JP7788849B2 (ja) * 2021-01-28 2025-12-19 東レエンジニアリング株式会社 転写装置および転写基板
WO2022163255A1 (ja) * 2021-01-28 2022-08-04 東レエンジニアリング株式会社 転写装置および転写基板
KR102315935B1 (ko) * 2021-02-23 2021-10-22 양진석 복수의 칩 이송 장치 및 복수의 칩 이송 방법
WO2023281930A1 (ja) * 2021-07-08 2023-01-12 パナソニックＩｐマネジメント株式会社 レーザ溶接装置、レーザ溶接方法及び回転電機の製造方法
CN117677888A (zh) 2021-07-20 2024-03-08 信越化学工业株式会社 扫描型缩小投影光学系统及使用其的激光加工装置
CN114193937B (zh) * 2021-11-05 2022-10-14 华中科技大学 剔除坏点及自对准喷印的μLED全彩显示制造方法与设备
JP7733602B2 (ja) 2022-03-28 2025-09-03 東レエンジニアリング株式会社 転写装置および転写方法
JP2024091076A (ja) 2022-12-23 2024-07-04 東レエンジニアリング株式会社 転写装置
CN120418937A (zh) * 2022-12-27 2025-08-01 信越工程株式会社 传送装置及传送方法
WO2024157426A1 (ja) * 2023-01-26 2024-08-02 信越エンジニアリング株式会社 移送方法
CN116364818B (zh) * 2023-06-02 2023-11-24 惠科股份有限公司 Led灯板的制备方法、led灯板和显示装置
KR102840733B1 (ko) * 2024-07-17 2025-08-01 위아코퍼레이션 주식회사 레이저를 이용한 마이크로 부품의 재배치 방법 및 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4420760A (en) * 1982-04-26 1983-12-13 Sperry Corporation Printer beam position feedback sensor
US5475523A (en) * 1992-07-15 1995-12-12 Fjui Photo Film Co., Ltd. Disk for light beam recording device and light beam recording device
US5366559A (en) * 1993-05-27 1994-11-22 Research Triangle Institute Method for protecting a substrate surface from contamination using the photophoretic effect
US5948200A (en) * 1996-07-26 1999-09-07 Taiyo Yuden Co., Ltd. Method of manufacturing laminated ceramic electronic parts
JPH1097715A (ja) * 1996-07-31 1998-04-14 Asahi Komagu Kk 磁気記録媒体用基板および磁気記録媒体
JP2002335063A (ja) * 2001-05-09 2002-11-22 Hitachi Via Mechanics Ltd プリント基板の穴あけ加工方法および装置
JP2003077940A (ja) * 2001-09-06 2003-03-14 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP2003264203A (ja) * 2002-03-11 2003-09-19 Hitachi Ltd 半導体装置の製造方法
JP3378242B1 (ja) * 2002-03-26 2003-02-17 住友重機械工業株式会社 レーザ加工方法及び加工装置
JP4430855B2 (ja) * 2002-07-23 2010-03-10 Ｈｏｙａ株式会社 走査光学系
JP4307041B2 (ja) * 2002-09-20 2009-08-05 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
JP2004285171A (ja) 2003-03-20 2004-10-14 Dainippon Ink & Chem Inc 水性顔料分散体の製造方法及び水性顔料記録液の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11437541B2 (en) 2019-05-08 2022-09-06 Samsung Electronics Co., Ltd. Transfer apparatus and method of manufacturing micro LED display using the same
WO2020255497A1 (ja) * 2019-06-17 2020-12-24 東レエンジニアリング株式会社 レーザ加工装置および方法、チップ転写装置および方法
JP2020203313A (ja) * 2019-06-17 2020-12-24 東レエンジニアリング株式会社 レーザ加工装置および方法、チップ転写装置および方法
JP7307001B2 (ja) 2019-06-17 2023-07-11 東レエンジニアリング株式会社 レーザ加工装置および方法、チップ転写装置および方法
TWI822986B (zh) * 2019-06-17 2023-11-21 日商東麗工程股份有限公司 雷射加工裝置及方法、晶片轉移裝置及方法

Also Published As

Publication number Publication date
US20060007297A1 (en) 2006-01-12
JP2006041500A (ja) 2006-02-09
US7744770B2 (en) 2010-06-29

Similar Documents

Publication Publication Date Title
JP4600178B2 (ja) 素子の転写方法及び素子の転写装置
JP6430677B1 (ja) ラインビーム光源およびラインビーム照射装置ならびにレーザリフトオフ方法
TW202036838A (zh) 發光二極體(led)巨量轉移裝置及製造方法
TWI575332B (zh) 微影裝置、圖案化器件及微影方法
HK1245417B (zh) 基板处理方法和基板处理装置
TW201245904A (en) Lithographic apparatus, programmable patterning device and lithographic method
JPH10175325A (ja) フライアイ積分器を使用するレーザプリンタ
CN108292093A (zh) 用于使用针对膜或表面改性的扫描光束的装置和方法
KR101497763B1 (ko) 레이저 가공 장치
CN107735715A (zh) 图案描绘装置及图案描绘方法
US12438030B2 (en) Apparatus for transferring light-emitting diode chip
JP6757509B2 (ja) 光加工方法
KR20120106402A (ko) 폴리곤 스캐너를 이용한 유기 발광 다이오드 제조용 레이저 열전사 장치
CN1753585B (zh) 制造有机发光显示器的方法
US20150124231A1 (en) Assembly For Modifying Properties Of A Plurality Of Radiation Beams, A Lithography Apparatus, A Method Of Modifying Properties Of A Plurality Of Radiation Beams And A Device Manufacturing Method
CN118426163A (zh) 激光转印装置
EP1849611A1 (en) Imaging system and method employing illumination field de-focus at the illumination modulator
TWM484111U (zh) 光學處理系統
HK1245420B (zh) 基板处理方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080502

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080502

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100615

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100622

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100806

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100831

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100913

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131008

Year of fee payment: 3

R151 Written notification of patent or utility model registration

Ref document number: 4600178

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131008

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees