JP4599578B2 - 半導体デバイス製造過程におけるパターンの変形とフォトマスクの汚染の抑制方法 - Google Patents

半導体デバイス製造過程におけるパターンの変形とフォトマスクの汚染の抑制方法 Download PDF

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Publication number
JP4599578B2
JP4599578B2 JP2004525039A JP2004525039A JP4599578B2 JP 4599578 B2 JP4599578 B2 JP 4599578B2 JP 2004525039 A JP2004525039 A JP 2004525039A JP 2004525039 A JP2004525039 A JP 2004525039A JP 4599578 B2 JP4599578 B2 JP 4599578B2
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amorphous carbon
layer
hard mask
capping
upper layer
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Expired - Fee Related
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Japanese (ja)
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JP2005535119A5 (enExample
JP2005535119A (ja
Inventor
ジェイ． ボンサー ダグラス
ブイ． プラット マリーナ
ユ ヤン チ
エイ． ベル スコット
エイ． チャン ダリン
エイ． フィッシャー フィリップ
エフ． ライアンズ クリストファー
エス． チャン マーク
ガオ ペイ−ユアン
アイ． ライト マリリン
ユー ルー
ダクシナ−マーシー スリカンテスワラ
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2004525039A 2002-07-31 2003-07-29 半導体デバイス製造過程におけるパターンの変形とフォトマスクの汚染の抑制方法 Expired - Fee Related JP4599578B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US40045302P 2002-07-31 2002-07-31
US10/334,392 US6764949B2 (en) 2002-07-31 2002-12-30 Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication
PCT/US2003/023746 WO2004012246A2 (en) 2002-07-31 2003-07-29 Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication

Publications (3)

Publication Number Publication Date
JP2005535119A JP2005535119A (ja) 2005-11-17
JP2005535119A5 JP2005535119A5 (enExample) 2006-09-14
JP4599578B2 true JP4599578B2 (ja) 2010-12-15

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Country Status (9)

Country Link
US (1) US6764949B2 (enExample)
EP (1) EP1576657B1 (enExample)
JP (1) JP4599578B2 (enExample)
KR (1) KR101001346B1 (enExample)
CN (1) CN100341114C (enExample)
AU (1) AU2003254254A1 (enExample)
DE (1) DE60330998D1 (enExample)
TW (1) TWI307917B (enExample)
WO (1) WO2004012246A2 (enExample)

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Also Published As

Publication number Publication date
KR20050019905A (ko) 2005-03-03
TW200405414A (en) 2004-04-01
DE60330998D1 (de) 2010-03-04
AU2003254254A1 (en) 2004-02-16
US6764949B2 (en) 2004-07-20
WO2004012246A3 (en) 2004-05-13
CN1672243A (zh) 2005-09-21
KR101001346B1 (ko) 2010-12-14
CN100341114C (zh) 2007-10-03
EP1576657B1 (en) 2010-01-13
TWI307917B (en) 2009-03-21
JP2005535119A (ja) 2005-11-17
US20040023475A1 (en) 2004-02-05
EP1576657A2 (en) 2005-09-21
WO2004012246A2 (en) 2004-02-05

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