CN100341114C - 减少在半导体装置制造过程中图案变形及光刻胶中毒的方法 - Google Patents

减少在半导体装置制造过程中图案变形及光刻胶中毒的方法 Download PDF

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Publication number
CN100341114C
CN100341114C CNB038182580A CN03818258A CN100341114C CN 100341114 C CN100341114 C CN 100341114C CN B038182580 A CNB038182580 A CN B038182580A CN 03818258 A CN03818258 A CN 03818258A CN 100341114 C CN100341114 C CN 100341114C
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China
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layer
amorphous carbon
substance
capping
hard
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Expired - Lifetime
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CNB038182580A
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English (en)
Chinese (zh)
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CN1672243A (zh
Inventor
D·J·邦瑟
M·V·普拉特
C·Y·杨
S·A·贝尔
D·A·陈
P·A·菲舍尔
C·F·利昂斯
M·S·张
P－Y·高
M·I·赖特
L·尤
S·达克施纳－摩西
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GlobalFoundries US Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
CNB038182580A 2002-07-31 2003-07-29 减少在半导体装置制造过程中图案变形及光刻胶中毒的方法 Expired - Lifetime CN100341114C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US40045302P 2002-07-31 2002-07-31
US60/400,453 2002-07-31
US10/334,392 2002-12-30
US10/334,392 US6764949B2 (en) 2002-07-31 2002-12-30 Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication

Publications (2)

Publication Number Publication Date
CN1672243A CN1672243A (zh) 2005-09-21
CN100341114C true CN100341114C (zh) 2007-10-03

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CNB038182580A Expired - Lifetime CN100341114C (zh) 2002-07-31 2003-07-29 减少在半导体装置制造过程中图案变形及光刻胶中毒的方法

Country Status (9)

Country Link
US (1) US6764949B2 (enExample)
EP (1) EP1576657B1 (enExample)
JP (1) JP4599578B2 (enExample)
KR (1) KR101001346B1 (enExample)
CN (1) CN100341114C (enExample)
AU (1) AU2003254254A1 (enExample)
DE (1) DE60330998D1 (enExample)
TW (1) TWI307917B (enExample)
WO (1) WO2004012246A2 (enExample)

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KR20050019905A (ko) 2005-03-03
TW200405414A (en) 2004-04-01
DE60330998D1 (de) 2010-03-04
AU2003254254A1 (en) 2004-02-16
US6764949B2 (en) 2004-07-20
WO2004012246A3 (en) 2004-05-13
CN1672243A (zh) 2005-09-21
KR101001346B1 (ko) 2010-12-14
EP1576657B1 (en) 2010-01-13
TWI307917B (en) 2009-03-21
JP2005535119A (ja) 2005-11-17
JP4599578B2 (ja) 2010-12-15
US20040023475A1 (en) 2004-02-05
EP1576657A2 (en) 2005-09-21
WO2004012246A2 (en) 2004-02-05

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