JP4599375B2 - 不揮発性半導体メモリ - Google Patents
不揮発性半導体メモリ Download PDFInfo
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- JP4599375B2 JP4599375B2 JP2007186274A JP2007186274A JP4599375B2 JP 4599375 B2 JP4599375 B2 JP 4599375B2 JP 2007186274 A JP2007186274 A JP 2007186274A JP 2007186274 A JP2007186274 A JP 2007186274A JP 4599375 B2 JP4599375 B2 JP 4599375B2
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- select gate
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- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 41
- 230000015654 memory Effects 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 56
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 56
- 238000000034 method Methods 0.000 description 53
- 230000008569 process Effects 0.000 description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 40
- 229920005591 polysilicon Polymers 0.000 description 40
- 238000004519 manufacturing process Methods 0.000 description 36
- 229910052751 metal Inorganic materials 0.000 description 33
- 239000002184 metal Substances 0.000 description 33
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 31
- 238000001020 plasma etching Methods 0.000 description 26
- 230000004888 barrier function Effects 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 229910052814 silicon oxide Inorganic materials 0.000 description 21
- 239000010936 titanium Substances 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 19
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229910052719 titanium Inorganic materials 0.000 description 19
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 19
- 229910052721 tungsten Inorganic materials 0.000 description 19
- 239000010937 tungsten Substances 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 239000005380 borophosphosilicate glass Substances 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 238000002955 isolation Methods 0.000 description 9
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 9
- 229910021342 tungsten silicide Inorganic materials 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 101150015547 SDL1 gene Proteins 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 102100031885 General transcription and DNA repair factor IIH helicase subunit XPB Human genes 0.000 description 4
- 101000920748 Homo sapiens General transcription and DNA repair factor IIH helicase subunit XPB Proteins 0.000 description 4
- 101100049574 Human herpesvirus 6A (strain Uganda-1102) U5 gene Proteins 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 101150064834 ssl1 gene Proteins 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 101100204010 Drosophila melanogaster Ssl gene Proteins 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
Claims (3)
- 半導体基板上でカラム方向に沿って直列接続される複数のメモリセルとその両端に1つずつ接続される一対のセレクトゲートトランジスタとからそれぞれ構成され、互いに前記カラム方向に隣接して配置される第1及び第2NANDセルユニットを有し、前記第1及び第2NANDセルユニットがドレイン拡散層又はソース拡散層を共有する不揮発性半導体メモリにおいて、
前記第1NANDセルユニット内の前記ドレイン拡散層側又はソース拡散層側のセレクトゲートトランジスタの第1セレクトゲート電極、及び、この第1セレクトゲート電極に隣接する前記第2NANDセルユニット内のセレクトゲートトランジスタの第2セレクトゲート電極は、それぞれ、前記半導体基板上にゲート絶縁膜を介して設けられ、前記カラム方向に交差するロウ方向に延出し、コンタクト領域を有する第1導電層と、前記第1導電層上の第2導電層とを有し、前記第1セレクトゲート電極の第1導電層に対するコンタクト領域と前記第2セレクトゲート電極の第1導電層に対するコンタクト領域は、互いに対向しないように配置され、
前記第1及び第2セレクトゲート電極の少なくとも一方は、前記コンタクト領域上で前記第2導電層の前記カラム方向の長さが前記第1及び第2セレクトゲート電極のゲート長よりも長くなるように前記第2導電層が取り除かれている
ことを特徴とする不揮発性半導体メモリ。 - 前記第2導電層は、前記コンタクト領域上において前記カラム方向に折り曲ったパターンを有していることを特徴とする請求項1記載の不揮発性半導体メモリ。
- 前記第1セレクトゲート電極の第1導電層に対するコンタクト領域に対向する部分の前記第2セレクトゲート電極の第1及び第2導電層が取り除かれ、前記第2セレクトゲート電極の第1導電層に対するコンタクト領域に対向する部分の前記第1セレクトゲート電極の第1及び第2導電層が取り除かれていることを特徴とする請求項1又は2に記載の不揮発性半導体メモリ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007186274A JP4599375B2 (ja) | 2007-07-17 | 2007-07-17 | 不揮発性半導体メモリ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007186274A JP4599375B2 (ja) | 2007-07-17 | 2007-07-17 | 不揮発性半導体メモリ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP08437998A Division JP4130494B2 (ja) | 1998-03-30 | 1998-03-30 | 不揮発性半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007300136A JP2007300136A (ja) | 2007-11-15 |
JP4599375B2 true JP4599375B2 (ja) | 2010-12-15 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007186274A Expired - Fee Related JP4599375B2 (ja) | 2007-07-17 | 2007-07-17 | 不揮発性半導体メモリ |
Country Status (1)
Country | Link |
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JP (1) | JP4599375B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102074562B (zh) * | 2009-11-25 | 2012-08-29 | 中国科学院微电子研究所 | Nand结构及其形成方法 |
JP2015056434A (ja) * | 2013-09-10 | 2015-03-23 | 株式会社東芝 | 半導体記憶装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4115909C1 (ja) * | 1991-05-15 | 1992-11-12 | Siemens Ag, 8000 Muenchen, De | |
JPH04352469A (ja) * | 1991-05-30 | 1992-12-07 | Nec Corp | 半導体記憶装置 |
KR940009644B1 (ko) * | 1991-11-19 | 1994-10-15 | 삼성전자 주식회사 | 불휘발성 반도체메모리장치 및 그 제조방법 |
JP3383427B2 (ja) * | 1994-08-19 | 2003-03-04 | 株式会社東芝 | 不揮発性半導体装置 |
JP3675500B2 (ja) * | 1994-09-02 | 2005-07-27 | 株式会社東芝 | 不揮発性半導体記憶装置 |
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2007
- 2007-07-17 JP JP2007186274A patent/JP4599375B2/ja not_active Expired - Fee Related
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