JP4597295B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4597295B2
JP4597295B2 JP36628199A JP36628199A JP4597295B2 JP 4597295 B2 JP4597295 B2 JP 4597295B2 JP 36628199 A JP36628199 A JP 36628199A JP 36628199 A JP36628199 A JP 36628199A JP 4597295 B2 JP4597295 B2 JP 4597295B2
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Japan
Prior art keywords
film
insulating film
semiconductor
gate insulating
silicon nitride
Prior art date
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Expired - Lifetime
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JP36628199A
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English (en)
Japanese (ja)
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JP2000243974A (ja
JP2000243974A5 (ko
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP36628199A priority Critical patent/JP4597295B2/ja
Publication of JP2000243974A publication Critical patent/JP2000243974A/ja
Publication of JP2000243974A5 publication Critical patent/JP2000243974A5/ja
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Publication of JP4597295B2 publication Critical patent/JP4597295B2/ja
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  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Shift Register Type Memory (AREA)
JP36628199A 1998-12-25 1999-12-24 半導体装置およびその作製方法 Expired - Lifetime JP4597295B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP36628199A JP4597295B2 (ja) 1998-12-25 1999-12-24 半導体装置およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-370170 1998-12-25
JP37017098 1998-12-25
JP36628199A JP4597295B2 (ja) 1998-12-25 1999-12-24 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JP2000243974A JP2000243974A (ja) 2000-09-08
JP2000243974A5 JP2000243974A5 (ko) 2007-05-10
JP4597295B2 true JP4597295B2 (ja) 2010-12-15

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Family Applications (1)

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JP36628199A Expired - Lifetime JP4597295B2 (ja) 1998-12-25 1999-12-24 半導体装置およびその作製方法

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JP (1) JP4597295B2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG101479A1 (en) * 2000-09-14 2004-01-30 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US6509616B2 (en) * 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3643067B2 (ja) * 2001-10-11 2005-04-27 株式会社半導体エネルギー研究所 半導体表示装置の設計方法
CN103928476A (zh) 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
US9171640B2 (en) * 2009-10-09 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2903134B2 (ja) * 1990-11-10 1999-06-07 株式会社 半導体エネルギー研究所 半導体装置
JPH0818053A (ja) * 1994-06-28 1996-01-19 Mitsubishi Electric Corp 薄膜トランジスタ及びその製造方法
JP3420653B2 (ja) * 1995-03-16 2003-06-30 株式会社東芝 薄膜トランジスタおよび液晶表示素子

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JP2000243974A (ja) 2000-09-08

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