JP4596587B2 - リニア基板ポリシング・オペレーションのin−situモニタリング - Google Patents

リニア基板ポリシング・オペレーションのin−situモニタリング Download PDF

Info

Publication number
JP4596587B2
JP4596587B2 JP2000028219A JP2000028219A JP4596587B2 JP 4596587 B2 JP4596587 B2 JP 4596587B2 JP 2000028219 A JP2000028219 A JP 2000028219A JP 2000028219 A JP2000028219 A JP 2000028219A JP 4596587 B2 JP4596587 B2 JP 4596587B2
Authority
JP
Japan
Prior art keywords
polishing
sheet
abrasive
substrate
abrasive sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000028219A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000225564A (ja
JP2000225564A5 (enExample
Inventor
シー. レデカー フレッド
ビラング マヌーチャー
リ シジアン
ソメクー サッソン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2000225564A publication Critical patent/JP2000225564A/ja
Publication of JP2000225564A5 publication Critical patent/JP2000225564A5/ja
Application granted granted Critical
Publication of JP4596587B2 publication Critical patent/JP4596587B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/04Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
JP2000028219A 1999-02-04 2000-02-04 リニア基板ポリシング・オペレーションのin−situモニタリング Expired - Fee Related JP4596587B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/244816 1999-02-04
US09/244,816 US6179709B1 (en) 1999-02-04 1999-02-04 In-situ monitoring of linear substrate polishing operations

Publications (3)

Publication Number Publication Date
JP2000225564A JP2000225564A (ja) 2000-08-15
JP2000225564A5 JP2000225564A5 (enExample) 2007-03-22
JP4596587B2 true JP4596587B2 (ja) 2010-12-08

Family

ID=22924218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000028219A Expired - Fee Related JP4596587B2 (ja) 1999-02-04 2000-02-04 リニア基板ポリシング・オペレーションのin−situモニタリング

Country Status (5)

Country Link
US (4) US6179709B1 (enExample)
EP (1) EP1025954A3 (enExample)
JP (1) JP4596587B2 (enExample)
KR (1) KR100715083B1 (enExample)
TW (1) TW426580B (enExample)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69632490T2 (de) * 1995-03-28 2005-05-12 Applied Materials, Inc., Santa Clara Verfahren und Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US6876454B1 (en) 1995-03-28 2005-04-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6634935B2 (en) * 1998-12-01 2003-10-21 Nutool, Inc. Single drive system for a bi-directional linear chemical mechanical polishing apparatus
US6468139B1 (en) * 1998-12-01 2002-10-22 Nutool, Inc. Polishing apparatus and method with a refreshing polishing belt and loadable housing
US7425250B2 (en) * 1998-12-01 2008-09-16 Novellus Systems, Inc. Electrochemical mechanical processing apparatus
US6589105B2 (en) * 1998-12-01 2003-07-08 Nutool, Inc. Pad tensioning method and system in a bi-directional linear polisher
US6464571B2 (en) * 1998-12-01 2002-10-15 Nutool, Inc. Polishing apparatus and method with belt drive system adapted to extend the lifetime of a refreshing polishing belt provided therein
US6994607B2 (en) * 2001-12-28 2006-02-07 Applied Materials, Inc. Polishing pad with window
US6190234B1 (en) * 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
US6179709B1 (en) * 1999-02-04 2001-01-30 Applied Materials, Inc. In-situ monitoring of linear substrate polishing operations
US6213845B1 (en) * 1999-04-26 2001-04-10 Micron Technology, Inc. Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same
US6546306B1 (en) * 1999-08-11 2003-04-08 Advanced Micro Devices, Inc. Method for adjusting incoming film thickness uniformity such that variations across the film after polishing minimized
US6524164B1 (en) * 1999-09-14 2003-02-25 Applied Materials, Inc. Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
US6506097B1 (en) 2000-01-18 2003-01-14 Applied Materials, Inc. Optical monitoring in a two-step chemical mechanical polishing process
US6428394B1 (en) * 2000-03-31 2002-08-06 Lam Research Corporation Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed
US8485862B2 (en) 2000-05-19 2013-07-16 Applied Materials, Inc. Polishing pad for endpoint detection and related methods
US7374477B2 (en) 2002-02-06 2008-05-20 Applied Materials, Inc. Polishing pads useful for endpoint detection in chemical mechanical polishing
US6612901B1 (en) 2000-06-07 2003-09-02 Micron Technology, Inc. Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6500056B1 (en) 2000-06-30 2002-12-31 Lam Research Corporation Linear reciprocating disposable belt polishing method and apparatus
US6878038B2 (en) 2000-07-10 2005-04-12 Applied Materials Inc. Combined eddy current sensing and optical monitoring for chemical mechanical polishing
US6602724B2 (en) * 2000-07-27 2003-08-05 Applied Materials, Inc. Chemical mechanical polishing of a metal layer with polishing rate monitoring
US6609947B1 (en) * 2000-08-30 2003-08-26 Micron Technology, Inc. Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates
US7139083B2 (en) 2000-09-20 2006-11-21 Kla-Tencor Technologies Corp. Methods and systems for determining a composition and a thickness of a specimen
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6694284B1 (en) 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US6812045B1 (en) 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US7349090B2 (en) 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6673637B2 (en) * 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US6782337B2 (en) * 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
WO2002070200A1 (en) * 2001-03-01 2002-09-12 Cabot Microelectronics Corporation Method for manufacturing a polishing pad having a compressed translucent region
US6608495B2 (en) 2001-03-19 2003-08-19 Applied Materials, Inc. Eddy-optic sensor for object inspection
US6966816B2 (en) * 2001-05-02 2005-11-22 Applied Materials, Inc. Integrated endpoint detection system with optical and eddy current monitoring
US6811466B1 (en) 2001-12-28 2004-11-02 Applied Materials, Inc. System and method for in-line metal profile measurement
US7030018B2 (en) * 2002-02-04 2006-04-18 Kla-Tencor Technologies Corp. Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool
US7341502B2 (en) * 2002-07-18 2008-03-11 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US6676483B1 (en) 2003-02-03 2004-01-13 Rodel Holdings, Inc. Anti-scattering layer for polishing pad windows
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US8864859B2 (en) 2003-03-25 2014-10-21 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US9278424B2 (en) 2003-03-25 2016-03-08 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
SG185141A1 (en) 2003-03-25 2012-11-29 Neopad Technologies Corp Customized polish pads for chemical mechanical planarization
US7008296B2 (en) * 2003-06-18 2006-03-07 Applied Materials, Inc. Data processing for monitoring chemical mechanical polishing
US8066552B2 (en) * 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
US20050173259A1 (en) * 2004-02-06 2005-08-11 Applied Materials, Inc. Endpoint system for electro-chemical mechanical polishing
US20050101228A1 (en) * 2003-11-10 2005-05-12 Cabot Microelectronics Corporation Polishing pad comprising biodegradable polymer
US7648622B2 (en) * 2004-02-27 2010-01-19 Novellus Systems, Inc. System and method for electrochemical mechanical polishing
TWI385050B (zh) * 2005-02-18 2013-02-11 Nexplanar Corp 用於cmp之特製拋光墊及其製造方法及其用途
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
US7210980B2 (en) 2005-08-26 2007-05-01 Applied Materials, Inc. Sealed polishing pad, system and methods
KR100882045B1 (ko) * 2006-02-15 2009-02-09 어플라이드 머티어리얼스, 인코포레이티드 그루브형 서브패드를 구비한 폴리싱 장치
US20070251832A1 (en) * 2006-04-27 2007-11-01 Applied Materials, Inc. Method and apparatus for electrochemical mechanical polishing of cu with higher liner velocity for better surface finish and higher removal rate during clearance
US8337278B2 (en) * 2007-09-24 2012-12-25 Applied Materials, Inc. Wafer edge characterization by successive radius measurements
KR101067370B1 (ko) * 2008-09-05 2011-09-23 참엔지니어링(주) 평판표시패널용 연마장치와 그 구동방법 및 이를 구비하는 리페어 시스템
US20100112919A1 (en) * 2008-11-03 2010-05-06 Applied Materials, Inc. Monolithic linear polishing sheet
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR102329099B1 (ko) 2017-01-20 2021-11-19 어플라이드 머티어리얼스, 인코포레이티드 Cmp 응용들을 위한 얇은 플라스틱 연마 물품
TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019022961A1 (en) * 2017-07-28 2019-01-31 Applied Materials, Inc. METHOD FOR IDENTIFYING AND MONITORING ROLLER ROLL POLISHING PAD MATERIALS DURING PROCESSING
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
JP6673965B2 (ja) * 2018-03-30 2020-04-01 株式会社サンシン 板状部材研磨装置
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
TWI828706B (zh) 2018-06-20 2024-01-11 美商應用材料股份有限公司 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US11717936B2 (en) 2018-09-14 2023-08-08 Applied Materials, Inc. Methods for a web-based CMP system
US12447578B2 (en) 2018-09-26 2025-10-21 Applied Materials, Inc. Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
CN115135450B (zh) 2020-05-14 2024-07-09 应用材料公司 训练神经网络用于抛光期间的原位监测的技术和抛光系统
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
CN115038549B (zh) 2020-06-24 2024-03-12 应用材料公司 使用研磨垫磨损补偿的基板层厚度确定
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US516400A (en) 1894-03-13 Tie-chain for vehicle-bodies
FR1075634A (fr) 1953-03-12 1954-10-19 Dispositif de meulage à meule entaillée permettant d'observer le travail effectué
US3888050A (en) 1974-02-19 1975-06-10 Timesavers Inc Method of and apparatus for rapidly and simultaneously abrading metal workpieces in preselected plural numbers
JPS584353A (ja) 1981-06-24 1983-01-11 Hitachi Ltd ラツピング装置
GB2144354B (en) 1983-07-15 1987-03-11 Helical Springs Limited Grinding apparatus
JPS62211927A (ja) 1986-03-12 1987-09-17 Nec Corp 半導体ウエ−ハの加工方法
DE8903949U1 (de) 1989-03-31 1990-08-02 Weber, Georg, 8640 Kronach Bandschleifmaschine
US5563524A (en) * 1989-05-19 1996-10-08 A.T.E. Solutions, Inc. Apparatus for testing electric circuits
JPH03234467A (ja) 1990-02-05 1991-10-18 Canon Inc スタンパの金型取付面の研磨方法およびその研磨機
US5127196A (en) 1990-03-01 1992-07-07 Intel Corporation Apparatus for planarizing a dielectric formed over a semiconductor substrate
US5257478A (en) * 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
FR2665024B1 (fr) 1990-07-20 1994-02-18 Jean Galvier Procede de determination de l'elimination complete d'une couche mince sur un substrat non plan.
US5081796A (en) 1990-08-06 1992-01-21 Micron Technology, Inc. Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US5212910A (en) * 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5484323A (en) 1991-07-22 1996-01-16 Smith; Robert K. Belt cleaner
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
WO1993020976A1 (en) 1992-04-13 1993-10-28 Minnesota Mining And Manufacturing Company Abrasive article
JP2770101B2 (ja) 1992-05-08 1998-06-25 コマツ電子金属株式会社 貼り合わせウェーハの研磨方法
US5445996A (en) 1992-05-26 1995-08-29 Kabushiki Kaisha Toshiba Method for planarizing a semiconductor device having a amorphous layer
US5265378A (en) * 1992-07-10 1993-11-30 Lsi Logic Corporation Detecting the endpoint of chem-mech polishing and resulting semiconductor device
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
JP3326443B2 (ja) 1993-08-10 2002-09-24 株式会社ニコン ウエハ研磨方法及びその装置
JPH07111256A (ja) * 1993-10-13 1995-04-25 Toshiba Corp 半導体製造装置
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
US5413941A (en) 1994-01-06 1995-05-09 Micron Technology, Inc. Optical end point detection methods in semiconductor planarizing polishing processes
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5562524A (en) 1994-05-04 1996-10-08 Gill, Jr.; Gerald L. Polishing apparatus
DE69512971T2 (de) 1994-08-09 2000-05-18 Ontrak Systems Inc., Milpitas Linear Poliergerät und Wafer Planarisierungsverfahren
JPH0881040A (ja) * 1994-09-13 1996-03-26 Otsuka Pharmaceut Co Ltd 異形錠剤供給方法とその装置
US5575707A (en) 1994-10-11 1996-11-19 Ontrak Systems, Inc. Polishing pad cluster for polishing a semiconductor wafer
US5593344A (en) 1994-10-11 1997-01-14 Ontrak Systems, Inc. Wafer polishing machine with fluid bearings and drive systems
US5791969A (en) * 1994-11-01 1998-08-11 Lund; Douglas E. System and method of automatically polishing semiconductor wafers
JPH08174411A (ja) 1994-12-22 1996-07-09 Ebara Corp ポリッシング装置
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
DE69632490T2 (de) 1995-03-28 2005-05-12 Applied Materials, Inc., Santa Clara Verfahren und Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5559334A (en) * 1995-05-22 1996-09-24 General Electric Company Epipolar reconstruction of 3D structures
KR100281723B1 (ko) 1995-05-30 2001-10-22 코트게리 연마방법및그장치
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
JP3321338B2 (ja) 1995-07-24 2002-09-03 株式会社東芝 半導体装置の製造方法および製造装置
JP2737709B2 (ja) 1995-07-28 1998-04-08 日本電気株式会社 半導体装置の製造方法およびその装置
US5605760A (en) 1995-08-21 1997-02-25 Rodel, Inc. Polishing pads
JP3234467B2 (ja) 1995-09-26 2001-12-04 松下電工株式会社 軒樋接続構造
US5961372A (en) * 1995-12-05 1999-10-05 Applied Materials, Inc. Substrate belt polisher
ATE228915T1 (de) 1996-01-24 2002-12-15 Lam Res Corp Halbleiterscheiben-polierkopf
US5640242A (en) 1996-01-31 1997-06-17 International Business Machines Corporation Assembly and method for making in process thin film thickness measurments
US5800248A (en) 1996-04-26 1998-09-01 Ontrak Systems Inc. Control of chemical-mechanical polishing rate across a substrate surface
US5762536A (en) 1996-04-26 1998-06-09 Lam Research Corporation Sensors for a linear polisher
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
DE19632556A1 (de) 1996-08-13 1998-02-19 Bayer Ag Verfahren zur Herstellung von hochkautschukhaltigen ABS-Formmassen
US5846882A (en) 1996-10-03 1998-12-08 Applied Materials, Inc. Endpoint detector for a chemical mechanical polishing system
US5722877A (en) 1996-10-11 1998-03-03 Lam Research Corporation Technique for improving within-wafer non-uniformity of material removal for performing CMP
US6183354B1 (en) * 1996-11-08 2001-02-06 Applied Materials, Inc. Carrier head with a flexible membrane for a chemical mechanical polishing system
US6328642B1 (en) * 1997-02-14 2001-12-11 Lam Research Corporation Integrated pad and belt for chemical mechanical polishing
US5888119A (en) * 1997-03-07 1999-03-30 Minnesota Mining And Manufacturing Company Method for providing a clear surface finish on glass
US6108091A (en) 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6111634A (en) 1997-05-28 2000-08-29 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing
US6146248A (en) * 1997-05-28 2000-11-14 Lam Research Corporation Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
JPH11100025A (ja) 1997-09-29 1999-04-13 Sony Corp 緩衝装置及び包装用カートン
US6068539A (en) * 1998-03-10 2000-05-30 Lam Research Corporation Wafer polishing device with movable window
US6280289B1 (en) * 1998-11-02 2001-08-28 Applied Materials, Inc. Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers
US6179709B1 (en) * 1999-02-04 2001-01-30 Applied Materials, Inc. In-situ monitoring of linear substrate polishing operations
US6244935B1 (en) * 1999-02-04 2001-06-12 Applied Materials, Inc. Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet
US6171181B1 (en) * 1999-08-17 2001-01-09 Rodel Holdings, Inc. Molded polishing pad having integral window
US6524164B1 (en) * 1999-09-14 2003-02-25 Applied Materials, Inc. Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
DE60011798T2 (de) * 1999-09-29 2005-11-10 Rohm and Haas Electronic Materials CMP Holdings, Inc., Wilmington Schleifkissen
US20020072296A1 (en) * 2000-11-29 2002-06-13 Muilenburg Michael J. Abrasive article having a window system for polishing wafers, and methods
KR100881040B1 (ko) * 2005-03-11 2009-02-05 나가세케무텍쿠스가부시키가이샤 의약 조성물

Also Published As

Publication number Publication date
KR100715083B1 (ko) 2007-05-07
KR20000057876A (ko) 2000-09-25
EP1025954A2 (en) 2000-08-09
TW426580B (en) 2001-03-21
JP2000225564A (ja) 2000-08-15
US20030181137A1 (en) 2003-09-25
US6179709B1 (en) 2001-01-30
US20040198185A1 (en) 2004-10-07
US6991517B2 (en) 2006-01-31
EP1025954A3 (en) 2003-04-16
US6796880B2 (en) 2004-09-28
US6585563B1 (en) 2003-07-01

Similar Documents

Publication Publication Date Title
JP4596587B2 (ja) リニア基板ポリシング・オペレーションのin−situモニタリング
US7479206B2 (en) Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6428386B1 (en) Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6447369B1 (en) Planarizing machines and alignment systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates
US7229338B2 (en) Apparatuses and methods for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6656019B1 (en) Grooved polishing pads and methods of use
US7195539B2 (en) Polishing pad with recessed window
JP7227137B2 (ja) Cmp用途向けの薄いプラスチック研磨物品
US6336851B1 (en) Substrate belt polisher
US20090298388A1 (en) Method and apparatus for chemical mechanical polishing of large size wafer with capability of polishing individual die
US20020164936A1 (en) Chemical mechanical polisher with grooved belt
EP1214174B1 (en) Windowless belt and method for in-situ wafer monitoring
JP2009016759A (ja) 半導体ウェーハ端面研磨装置およびこれに用いる研磨ヘッド
CN1252336A (zh) 化学机械研磨垫
US6540595B1 (en) Chemical-Mechanical polishing apparatus and method utilizing an advanceable polishing sheet
KR20020086707A (ko) 고정연마제 선형 연마벨트 및 그것을 이용하는 시스템

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070205

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070205

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091006

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100104

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100323

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100623

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100628

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100723

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100728

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100823

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100914

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100921

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4596587

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131001

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131001

Year of fee payment: 3

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees