JP4594070B2 - 半導体レーザ素子及びその製造方法 - Google Patents

半導体レーザ素子及びその製造方法 Download PDF

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Publication number
JP4594070B2
JP4594070B2 JP2004372897A JP2004372897A JP4594070B2 JP 4594070 B2 JP4594070 B2 JP 4594070B2 JP 2004372897 A JP2004372897 A JP 2004372897A JP 2004372897 A JP2004372897 A JP 2004372897A JP 4594070 B2 JP4594070 B2 JP 4594070B2
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Japan
Prior art keywords
laser
face
semiconductor laser
adhesion preventing
plated
Prior art date
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Expired - Lifetime
Application number
JP2004372897A
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English (en)
Japanese (ja)
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JP2005322881A5 (enExample
JP2005322881A (ja
Inventor
淳一 堀江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2004372897A priority Critical patent/JP4594070B2/ja
Priority to TW094107484A priority patent/TWI268032B/zh
Priority to US11/086,440 priority patent/US7420998B2/en
Priority to CN200510062896A priority patent/CN100592587C/zh
Publication of JP2005322881A publication Critical patent/JP2005322881A/ja
Publication of JP2005322881A5 publication Critical patent/JP2005322881A5/ja
Priority to US11/763,640 priority patent/US7664152B2/en
Application granted granted Critical
Publication of JP4594070B2 publication Critical patent/JP4594070B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2004372897A 2004-04-06 2004-12-24 半導体レーザ素子及びその製造方法 Expired - Lifetime JP4594070B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004372897A JP4594070B2 (ja) 2004-04-06 2004-12-24 半導体レーザ素子及びその製造方法
TW094107484A TWI268032B (en) 2004-04-06 2005-03-11 Semiconductor laser device
US11/086,440 US7420998B2 (en) 2004-04-06 2005-03-23 Semiconductor laser device
CN200510062896A CN100592587C (zh) 2004-04-06 2005-04-05 半导体激光元件
US11/763,640 US7664152B2 (en) 2004-04-06 2007-06-15 Semiconductor laser device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004112254 2004-04-06
JP2004372897A JP4594070B2 (ja) 2004-04-06 2004-12-24 半導体レーザ素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2005322881A JP2005322881A (ja) 2005-11-17
JP2005322881A5 JP2005322881A5 (enExample) 2007-02-08
JP4594070B2 true JP4594070B2 (ja) 2010-12-08

Family

ID=35054913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004372897A Expired - Lifetime JP4594070B2 (ja) 2004-04-06 2004-12-24 半導体レーザ素子及びその製造方法

Country Status (4)

Country Link
US (2) US7420998B2 (enExample)
JP (1) JP4594070B2 (enExample)
CN (1) CN100592587C (enExample)
TW (1) TWI268032B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4930322B2 (ja) * 2006-11-10 2012-05-16 ソニー株式会社 半導体発光素子、光ピックアップ装置および情報記録再生装置
DE102007011564B4 (de) * 2007-03-07 2019-08-22 Jenoptik Optical Systems Gmbh Verfahren zur verbesserten Herstellung von Diodenlaserbarren
JP2009238820A (ja) * 2008-03-26 2009-10-15 Sony Corp 半導体レーザ装置およびその製造方法
US9952388B2 (en) * 2012-09-16 2018-04-24 Shalom Wertsberger Nano-scale continuous resonance trap refractor based splitter, combiner, and reflector
JP6089902B2 (ja) * 2013-04-11 2017-03-08 三菱電機株式会社 半導体装置の製造方法
WO2021059485A1 (ja) 2019-09-27 2021-04-01 三菱電機株式会社 光半導体装置およびその製造方法
WO2022054281A1 (ja) * 2020-09-14 2022-03-17 三菱電機株式会社 ダミーバー、および、レーザーダイオードバーの端面成膜方法
US12341316B2 (en) 2020-11-12 2025-06-24 Mitsubishi Electric Corporation Method for forming film on end-surface of laser diode bar

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929486A (ja) * 1982-08-11 1984-02-16 Fujitsu Ltd 半導体レ−ザ素子の製造方法
JPH0613813B2 (ja) * 1986-07-22 1994-02-23 吉田工業株式会社 雨戸の収納・引出し装置
JPH0730095A (ja) * 1993-06-25 1995-01-31 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3116675B2 (ja) * 1993-07-28 2000-12-11 ソニー株式会社 半導体レーザー
JPH09167873A (ja) * 1995-12-15 1997-06-24 Mitsubishi Electric Corp 半導体レーザ装置
KR19980069992A (ko) * 1997-01-20 1998-10-26 사와무라시코우 광 반도체 장치와 지지기판의 복합 유니트 및 광 반도체 장치를지지기판 상에 실장하기 위한 방법
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JP3661919B2 (ja) 1998-10-27 2005-06-22 シャープ株式会社 半導体レーザ素子の製造方法
JP2001068782A (ja) 1999-08-31 2001-03-16 Matsushita Electronics Industry Corp 半導体発光装置およびその製造方法
JP5054874B2 (ja) * 1999-12-02 2012-10-24 ティーガル コーポレイション リアクタ内でプラチナエッチングを行う方法
JP3505478B2 (ja) * 2000-06-28 2004-03-08 三洋電機株式会社 窒化物系半導体レーザ素子および窒化物系半導体レーザ装置の製造方法
JP2002203499A (ja) * 2000-12-28 2002-07-19 Pioneer Electronic Corp 電子放出素子フラットパネル表示装置
JP2003209318A (ja) * 2001-11-12 2003-07-25 Sharp Corp 半導体レーザ素子および半導体レーザ素子の製造方法
JP4830315B2 (ja) * 2004-03-05 2011-12-07 日亜化学工業株式会社 半導体レーザ素子

Also Published As

Publication number Publication date
US7420998B2 (en) 2008-09-02
US20080198889A1 (en) 2008-08-21
CN1681172A (zh) 2005-10-12
TWI268032B (en) 2006-12-01
TW200534553A (en) 2005-10-16
US20050221549A1 (en) 2005-10-06
US7664152B2 (en) 2010-02-16
JP2005322881A (ja) 2005-11-17
CN100592587C (zh) 2010-02-24

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