TWI268032B - Semiconductor laser device - Google Patents
Semiconductor laser device Download PDFInfo
- Publication number
- TWI268032B TWI268032B TW094107484A TW94107484A TWI268032B TW I268032 B TWI268032 B TW I268032B TW 094107484 A TW094107484 A TW 094107484A TW 94107484 A TW94107484 A TW 94107484A TW I268032 B TWI268032 B TW I268032B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor laser
- film
- laser element
- adhesion preventing
- preventing film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000007747 plating Methods 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 23
- 229910052737 gold Inorganic materials 0.000 claims description 23
- 239000010931 gold Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000002313 adhesive film Substances 0.000 abstract description 3
- 230000000181 anti-adherent effect Effects 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 8
- 230000002265 prevention Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 4
- 230000001151 other effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- ZEMPKEQAKRGZGQ-AAKVHIHISA-N 2,3-bis[[(z)-12-hydroxyoctadec-9-enoyl]oxy]propyl (z)-12-hydroxyoctadec-9-enoate Chemical compound CCCCCCC(O)C\C=C/CCCCCCCC(=O)OCC(OC(=O)CCCCCCC\C=C/CC(O)CCCCCC)COC(=O)CCCCCCC\C=C/CC(O)CCCCCC ZEMPKEQAKRGZGQ-AAKVHIHISA-N 0.000 description 1
- 208000002874 Acne Vulgaris Diseases 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 206010000496 acne Diseases 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004112254 | 2004-04-06 | ||
| JP2004372897A JP4594070B2 (ja) | 2004-04-06 | 2004-12-24 | 半導体レーザ素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200534553A TW200534553A (en) | 2005-10-16 |
| TWI268032B true TWI268032B (en) | 2006-12-01 |
Family
ID=35054913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094107484A TWI268032B (en) | 2004-04-06 | 2005-03-11 | Semiconductor laser device |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7420998B2 (enExample) |
| JP (1) | JP4594070B2 (enExample) |
| CN (1) | CN100592587C (enExample) |
| TW (1) | TWI268032B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4930322B2 (ja) * | 2006-11-10 | 2012-05-16 | ソニー株式会社 | 半導体発光素子、光ピックアップ装置および情報記録再生装置 |
| DE102007011564B4 (de) * | 2007-03-07 | 2019-08-22 | Jenoptik Optical Systems Gmbh | Verfahren zur verbesserten Herstellung von Diodenlaserbarren |
| JP2009238820A (ja) * | 2008-03-26 | 2009-10-15 | Sony Corp | 半導体レーザ装置およびその製造方法 |
| US9952388B2 (en) * | 2012-09-16 | 2018-04-24 | Shalom Wertsberger | Nano-scale continuous resonance trap refractor based splitter, combiner, and reflector |
| JP6089902B2 (ja) * | 2013-04-11 | 2017-03-08 | 三菱電機株式会社 | 半導体装置の製造方法 |
| WO2021059485A1 (ja) | 2019-09-27 | 2021-04-01 | 三菱電機株式会社 | 光半導体装置およびその製造方法 |
| WO2022054281A1 (ja) * | 2020-09-14 | 2022-03-17 | 三菱電機株式会社 | ダミーバー、および、レーザーダイオードバーの端面成膜方法 |
| US12341316B2 (en) | 2020-11-12 | 2025-06-24 | Mitsubishi Electric Corporation | Method for forming film on end-surface of laser diode bar |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5929486A (ja) * | 1982-08-11 | 1984-02-16 | Fujitsu Ltd | 半導体レ−ザ素子の製造方法 |
| JPH0613813B2 (ja) * | 1986-07-22 | 1994-02-23 | 吉田工業株式会社 | 雨戸の収納・引出し装置 |
| JPH0730095A (ja) * | 1993-06-25 | 1995-01-31 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP3116675B2 (ja) * | 1993-07-28 | 2000-12-11 | ソニー株式会社 | 半導体レーザー |
| JPH09167873A (ja) * | 1995-12-15 | 1997-06-24 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| KR19980069992A (ko) * | 1997-01-20 | 1998-10-26 | 사와무라시코우 | 광 반도체 장치와 지지기판의 복합 유니트 및 광 반도체 장치를지지기판 상에 실장하기 위한 방법 |
| US6281524B1 (en) * | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
| JP3661919B2 (ja) | 1998-10-27 | 2005-06-22 | シャープ株式会社 | 半導体レーザ素子の製造方法 |
| JP2001068782A (ja) | 1999-08-31 | 2001-03-16 | Matsushita Electronics Industry Corp | 半導体発光装置およびその製造方法 |
| JP5054874B2 (ja) * | 1999-12-02 | 2012-10-24 | ティーガル コーポレイション | リアクタ内でプラチナエッチングを行う方法 |
| JP3505478B2 (ja) * | 2000-06-28 | 2004-03-08 | 三洋電機株式会社 | 窒化物系半導体レーザ素子および窒化物系半導体レーザ装置の製造方法 |
| JP2002203499A (ja) * | 2000-12-28 | 2002-07-19 | Pioneer Electronic Corp | 電子放出素子フラットパネル表示装置 |
| JP2003209318A (ja) * | 2001-11-12 | 2003-07-25 | Sharp Corp | 半導体レーザ素子および半導体レーザ素子の製造方法 |
| JP4830315B2 (ja) * | 2004-03-05 | 2011-12-07 | 日亜化学工業株式会社 | 半導体レーザ素子 |
-
2004
- 2004-12-24 JP JP2004372897A patent/JP4594070B2/ja not_active Expired - Lifetime
-
2005
- 2005-03-11 TW TW094107484A patent/TWI268032B/zh not_active IP Right Cessation
- 2005-03-23 US US11/086,440 patent/US7420998B2/en not_active Expired - Lifetime
- 2005-04-05 CN CN200510062896A patent/CN100592587C/zh not_active Expired - Lifetime
-
2007
- 2007-06-15 US US11/763,640 patent/US7664152B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US7420998B2 (en) | 2008-09-02 |
| US20080198889A1 (en) | 2008-08-21 |
| CN1681172A (zh) | 2005-10-12 |
| TW200534553A (en) | 2005-10-16 |
| JP4594070B2 (ja) | 2010-12-08 |
| US20050221549A1 (en) | 2005-10-06 |
| US7664152B2 (en) | 2010-02-16 |
| JP2005322881A (ja) | 2005-11-17 |
| CN100592587C (zh) | 2010-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |