CN100592587C - 半导体激光元件 - Google Patents

半导体激光元件 Download PDF

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Publication number
CN100592587C
CN100592587C CN200510062896A CN200510062896A CN100592587C CN 100592587 C CN100592587 C CN 100592587C CN 200510062896 A CN200510062896 A CN 200510062896A CN 200510062896 A CN200510062896 A CN 200510062896A CN 100592587 C CN100592587 C CN 100592587C
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CN
China
Prior art keywords
semiconductor laser
film
laser element
antiadhesive
surface electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN200510062896A
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English (en)
Chinese (zh)
Other versions
CN1681172A (zh
Inventor
堀江淳一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1681172A publication Critical patent/CN1681172A/zh
Application granted granted Critical
Publication of CN100592587C publication Critical patent/CN100592587C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CN200510062896A 2004-04-06 2005-04-05 半导体激光元件 Expired - Lifetime CN100592587C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP112254/2004 2004-04-06
JP112254/04 2004-04-06
JP2004112254 2004-04-06
JP2004372897A JP4594070B2 (ja) 2004-04-06 2004-12-24 半導体レーザ素子及びその製造方法
JP372897/04 2004-12-24
JP372897/2004 2004-12-24

Publications (2)

Publication Number Publication Date
CN1681172A CN1681172A (zh) 2005-10-12
CN100592587C true CN100592587C (zh) 2010-02-24

Family

ID=35054913

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200510062896A Expired - Lifetime CN100592587C (zh) 2004-04-06 2005-04-05 半导体激光元件

Country Status (4)

Country Link
US (2) US7420998B2 (enExample)
JP (1) JP4594070B2 (enExample)
CN (1) CN100592587C (enExample)
TW (1) TWI268032B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4930322B2 (ja) * 2006-11-10 2012-05-16 ソニー株式会社 半導体発光素子、光ピックアップ装置および情報記録再生装置
DE102007011564B4 (de) * 2007-03-07 2019-08-22 Jenoptik Optical Systems Gmbh Verfahren zur verbesserten Herstellung von Diodenlaserbarren
JP2009238820A (ja) * 2008-03-26 2009-10-15 Sony Corp 半導体レーザ装置およびその製造方法
US9952388B2 (en) * 2012-09-16 2018-04-24 Shalom Wertsberger Nano-scale continuous resonance trap refractor based splitter, combiner, and reflector
JP6089902B2 (ja) * 2013-04-11 2017-03-08 三菱電機株式会社 半導体装置の製造方法
WO2021059485A1 (ja) 2019-09-27 2021-04-01 三菱電機株式会社 光半導体装置およびその製造方法
WO2022054281A1 (ja) * 2020-09-14 2022-03-17 三菱電機株式会社 ダミーバー、および、レーザーダイオードバーの端面成膜方法
US12341316B2 (en) 2020-11-12 2025-06-24 Mitsubishi Electric Corporation Method for forming film on end-surface of laser diode bar

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929486A (ja) * 1982-08-11 1984-02-16 Fujitsu Ltd 半導体レ−ザ素子の製造方法
JPH0613813B2 (ja) * 1986-07-22 1994-02-23 吉田工業株式会社 雨戸の収納・引出し装置
JPH0730095A (ja) * 1993-06-25 1995-01-31 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3116675B2 (ja) * 1993-07-28 2000-12-11 ソニー株式会社 半導体レーザー
JPH09167873A (ja) * 1995-12-15 1997-06-24 Mitsubishi Electric Corp 半導体レーザ装置
KR19980069992A (ko) * 1997-01-20 1998-10-26 사와무라시코우 광 반도체 장치와 지지기판의 복합 유니트 및 광 반도체 장치를지지기판 상에 실장하기 위한 방법
US6281524B1 (en) * 1997-02-21 2001-08-28 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JP3661919B2 (ja) 1998-10-27 2005-06-22 シャープ株式会社 半導体レーザ素子の製造方法
JP2001068782A (ja) 1999-08-31 2001-03-16 Matsushita Electronics Industry Corp 半導体発光装置およびその製造方法
JP5054874B2 (ja) * 1999-12-02 2012-10-24 ティーガル コーポレイション リアクタ内でプラチナエッチングを行う方法
JP3505478B2 (ja) * 2000-06-28 2004-03-08 三洋電機株式会社 窒化物系半導体レーザ素子および窒化物系半導体レーザ装置の製造方法
JP2002203499A (ja) * 2000-12-28 2002-07-19 Pioneer Electronic Corp 電子放出素子フラットパネル表示装置
JP2003209318A (ja) * 2001-11-12 2003-07-25 Sharp Corp 半導体レーザ素子および半導体レーザ素子の製造方法
JP4830315B2 (ja) * 2004-03-05 2011-12-07 日亜化学工業株式会社 半導体レーザ素子

Also Published As

Publication number Publication date
US7420998B2 (en) 2008-09-02
US20080198889A1 (en) 2008-08-21
CN1681172A (zh) 2005-10-12
TWI268032B (en) 2006-12-01
TW200534553A (en) 2005-10-16
JP4594070B2 (ja) 2010-12-08
US20050221549A1 (en) 2005-10-06
US7664152B2 (en) 2010-02-16
JP2005322881A (ja) 2005-11-17

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Granted publication date: 20100224