JP2005322881A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005322881A5 JP2005322881A5 JP2004372897A JP2004372897A JP2005322881A5 JP 2005322881 A5 JP2005322881 A5 JP 2005322881A5 JP 2004372897 A JP2004372897 A JP 2004372897A JP 2004372897 A JP2004372897 A JP 2004372897A JP 2005322881 A5 JP2005322881 A5 JP 2005322881A5
- Authority
- JP
- Japan
- Prior art keywords
- laser
- semiconductor
- adhesion preventing
- preventing film
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 23
- 239000000758 substrate Substances 0.000 claims 4
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004372897A JP4594070B2 (ja) | 2004-04-06 | 2004-12-24 | 半導体レーザ素子及びその製造方法 |
| TW094107484A TWI268032B (en) | 2004-04-06 | 2005-03-11 | Semiconductor laser device |
| US11/086,440 US7420998B2 (en) | 2004-04-06 | 2005-03-23 | Semiconductor laser device |
| CN200510062896A CN100592587C (zh) | 2004-04-06 | 2005-04-05 | 半导体激光元件 |
| US11/763,640 US7664152B2 (en) | 2004-04-06 | 2007-06-15 | Semiconductor laser device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004112254 | 2004-04-06 | ||
| JP2004372897A JP4594070B2 (ja) | 2004-04-06 | 2004-12-24 | 半導体レーザ素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005322881A JP2005322881A (ja) | 2005-11-17 |
| JP2005322881A5 true JP2005322881A5 (enExample) | 2007-02-08 |
| JP4594070B2 JP4594070B2 (ja) | 2010-12-08 |
Family
ID=35054913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004372897A Expired - Lifetime JP4594070B2 (ja) | 2004-04-06 | 2004-12-24 | 半導体レーザ素子及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7420998B2 (enExample) |
| JP (1) | JP4594070B2 (enExample) |
| CN (1) | CN100592587C (enExample) |
| TW (1) | TWI268032B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4930322B2 (ja) | 2006-11-10 | 2012-05-16 | ソニー株式会社 | 半導体発光素子、光ピックアップ装置および情報記録再生装置 |
| DE102007011564B4 (de) * | 2007-03-07 | 2019-08-22 | Jenoptik Optical Systems Gmbh | Verfahren zur verbesserten Herstellung von Diodenlaserbarren |
| JP2009238820A (ja) * | 2008-03-26 | 2009-10-15 | Sony Corp | 半導体レーザ装置およびその製造方法 |
| US9952388B2 (en) * | 2012-09-16 | 2018-04-24 | Shalom Wertsberger | Nano-scale continuous resonance trap refractor based splitter, combiner, and reflector |
| JP6089902B2 (ja) * | 2013-04-11 | 2017-03-08 | 三菱電機株式会社 | 半導体装置の製造方法 |
| WO2021059485A1 (ja) | 2019-09-27 | 2021-04-01 | 三菱電機株式会社 | 光半導体装置およびその製造方法 |
| US12278459B2 (en) * | 2020-09-14 | 2025-04-15 | Mitsubishi Electric Corporation | Dummy bar configured to align laser diode bar during deposition of film on end faces of laser diode bar and method for depositing film on end faces of laser diode bar |
| US12341316B2 (en) | 2020-11-12 | 2025-06-24 | Mitsubishi Electric Corporation | Method for forming film on end-surface of laser diode bar |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5929486A (ja) * | 1982-08-11 | 1984-02-16 | Fujitsu Ltd | 半導体レ−ザ素子の製造方法 |
| JPH0613813B2 (ja) * | 1986-07-22 | 1994-02-23 | 吉田工業株式会社 | 雨戸の収納・引出し装置 |
| JPH0730095A (ja) | 1993-06-25 | 1995-01-31 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP3116675B2 (ja) * | 1993-07-28 | 2000-12-11 | ソニー株式会社 | 半導体レーザー |
| JPH09167873A (ja) * | 1995-12-15 | 1997-06-24 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| KR19980069992A (ko) * | 1997-01-20 | 1998-10-26 | 사와무라시코우 | 광 반도체 장치와 지지기판의 복합 유니트 및 광 반도체 장치를지지기판 상에 실장하기 위한 방법 |
| US6281524B1 (en) * | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
| JP3661919B2 (ja) | 1998-10-27 | 2005-06-22 | シャープ株式会社 | 半導体レーザ素子の製造方法 |
| JP2001068782A (ja) | 1999-08-31 | 2001-03-16 | Matsushita Electronics Industry Corp | 半導体発光装置およびその製造方法 |
| EP1252359B1 (en) * | 1999-12-02 | 2020-03-11 | OEM Group, Inc | Method of operating a platinum etch reactor |
| JP3505478B2 (ja) * | 2000-06-28 | 2004-03-08 | 三洋電機株式会社 | 窒化物系半導体レーザ素子および窒化物系半導体レーザ装置の製造方法 |
| JP2002203499A (ja) * | 2000-12-28 | 2002-07-19 | Pioneer Electronic Corp | 電子放出素子フラットパネル表示装置 |
| JP2003209318A (ja) * | 2001-11-12 | 2003-07-25 | Sharp Corp | 半導体レーザ素子および半導体レーザ素子の製造方法 |
| JP4830315B2 (ja) * | 2004-03-05 | 2011-12-07 | 日亜化学工業株式会社 | 半導体レーザ素子 |
-
2004
- 2004-12-24 JP JP2004372897A patent/JP4594070B2/ja not_active Expired - Lifetime
-
2005
- 2005-03-11 TW TW094107484A patent/TWI268032B/zh not_active IP Right Cessation
- 2005-03-23 US US11/086,440 patent/US7420998B2/en not_active Expired - Lifetime
- 2005-04-05 CN CN200510062896A patent/CN100592587C/zh not_active Expired - Lifetime
-
2007
- 2007-06-15 US US11/763,640 patent/US7664152B2/en not_active Expired - Lifetime