JP2002299769A5 - - Google Patents
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- Publication number
- JP2002299769A5 JP2002299769A5 JP2001098654A JP2001098654A JP2002299769A5 JP 2002299769 A5 JP2002299769 A5 JP 2002299769A5 JP 2001098654 A JP2001098654 A JP 2001098654A JP 2001098654 A JP2001098654 A JP 2001098654A JP 2002299769 A5 JP2002299769 A5 JP 2002299769A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor light
- semiconductor
- substrate
- light emitting
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 36
- 239000000758 substrate Substances 0.000 claims 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 7
- 150000004767 nitrides Chemical class 0.000 claims 6
- 235000011007 phosphoric acid Nutrition 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 2
- GIXFALHDORQSOQ-UHFFFAOYSA-N 2,4,6,8-tetrahydroxy-1,3,5,7,2$l^{5},4$l^{5},6$l^{5},8$l^{5}-tetraoxatetraphosphocane 2,4,6,8-tetraoxide Chemical compound OP1(=O)OP(O)(=O)OP(O)(=O)OP(O)(=O)O1 GIXFALHDORQSOQ-UHFFFAOYSA-N 0.000 claims 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- AZSFNUJOCKMOGB-UHFFFAOYSA-K cyclotriphosphate(3-) Chemical compound [O-]P1(=O)OP([O-])(=O)OP([O-])(=O)O1 AZSFNUJOCKMOGB-UHFFFAOYSA-K 0.000 claims 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 125000005341 metaphosphate group Chemical group 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 229940005657 pyrophosphoric acid Drugs 0.000 claims 1
- 239000001226 triphosphate Substances 0.000 claims 1
- 235000011178 triphosphate Nutrition 0.000 claims 1
- UNXRWKVEANCORM-UHFFFAOYSA-N triphosphoric acid Chemical compound OP(O)(=O)OP(O)(=O)OP(O)(O)=O UNXRWKVEANCORM-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001098654A JP3812356B2 (ja) | 2001-03-30 | 2001-03-30 | 半導体発光素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001098654A JP3812356B2 (ja) | 2001-03-30 | 2001-03-30 | 半導体発光素子およびその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005228156A Division JP2005328092A (ja) | 2005-08-05 | 2005-08-05 | 半導体レーザ装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002299769A JP2002299769A (ja) | 2002-10-11 |
| JP2002299769A5 true JP2002299769A5 (enExample) | 2005-08-11 |
| JP3812356B2 JP3812356B2 (ja) | 2006-08-23 |
Family
ID=18952291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001098654A Expired - Fee Related JP3812356B2 (ja) | 2001-03-30 | 2001-03-30 | 半導体発光素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3812356B2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6791120B2 (en) | 2002-03-26 | 2004-09-14 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor device and method of fabricating the same |
| JP4895466B2 (ja) * | 2002-10-29 | 2012-03-14 | 日亜化学工業株式会社 | 窒化物半導体素子およびその製造方法 |
| JP2006179508A (ja) * | 2003-03-06 | 2006-07-06 | Matsushita Electric Ind Co Ltd | 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子の劣化防止方法 |
| TWI237402B (en) | 2004-03-24 | 2005-08-01 | Epistar Corp | High luminant device |
| US7385226B2 (en) | 2004-03-24 | 2008-06-10 | Epistar Corporation | Light-emitting device |
| US9508902B2 (en) | 2005-02-21 | 2016-11-29 | Epistar Corporation | Optoelectronic semiconductor device |
| US8097897B2 (en) | 2005-06-21 | 2012-01-17 | Epistar Corporation | High-efficiency light-emitting device and manufacturing method thereof |
| KR100610950B1 (ko) | 2005-02-25 | 2006-08-09 | 엘에스전선 주식회사 | 열방출 구조가 개선된 레이저 다이오드 및 그 제조방법 |
| KR100673873B1 (ko) * | 2005-05-12 | 2007-01-25 | 삼성코닝 주식회사 | 열전도도가 우수한 질화갈륨 단결정 기판 |
| JP2009238820A (ja) * | 2008-03-26 | 2009-10-15 | Sony Corp | 半導体レーザ装置およびその製造方法 |
| CN103493224A (zh) | 2012-02-23 | 2014-01-01 | 松下电器产业株式会社 | 氮化物半导体发光芯片、氮化物半导体发光装置及氮化物半导体芯片的制造方法 |
| DE102016110790B4 (de) * | 2016-06-13 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
| WO2024261803A1 (ja) * | 2023-06-19 | 2024-12-26 | 日本電信電話株式会社 | 半導体デバイス |
-
2001
- 2001-03-30 JP JP2001098654A patent/JP3812356B2/ja not_active Expired - Fee Related
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