JP3812356B2 - 半導体発光素子およびその製造方法 - Google Patents

半導体発光素子およびその製造方法 Download PDF

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Publication number
JP3812356B2
JP3812356B2 JP2001098654A JP2001098654A JP3812356B2 JP 3812356 B2 JP3812356 B2 JP 3812356B2 JP 2001098654 A JP2001098654 A JP 2001098654A JP 2001098654 A JP2001098654 A JP 2001098654A JP 3812356 B2 JP3812356 B2 JP 3812356B2
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JP
Japan
Prior art keywords
semiconductor
substrate
semiconductor light
light emitting
back surface
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Expired - Fee Related
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JP2001098654A
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English (en)
Japanese (ja)
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JP2002299769A5 (enExample
JP2002299769A (ja
Inventor
歩 辻村
信之 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2001098654A priority Critical patent/JP3812356B2/ja
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Publication of JP2002299769A5 publication Critical patent/JP2002299769A5/ja
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  • Semiconductor Lasers (AREA)
JP2001098654A 2001-03-30 2001-03-30 半導体発光素子およびその製造方法 Expired - Fee Related JP3812356B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001098654A JP3812356B2 (ja) 2001-03-30 2001-03-30 半導体発光素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001098654A JP3812356B2 (ja) 2001-03-30 2001-03-30 半導体発光素子およびその製造方法

Related Child Applications (1)

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JP2005228156A Division JP2005328092A (ja) 2005-08-05 2005-08-05 半導体レーザ装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2002299769A JP2002299769A (ja) 2002-10-11
JP2002299769A5 JP2002299769A5 (enExample) 2005-08-11
JP3812356B2 true JP3812356B2 (ja) 2006-08-23

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JP2001098654A Expired - Fee Related JP3812356B2 (ja) 2001-03-30 2001-03-30 半導体発光素子およびその製造方法

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6791120B2 (en) 2002-03-26 2004-09-14 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
JP4895466B2 (ja) * 2002-10-29 2012-03-14 日亜化学工業株式会社 窒化物半導体素子およびその製造方法
JP2006179508A (ja) * 2003-03-06 2006-07-06 Matsushita Electric Ind Co Ltd 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子の劣化防止方法
TWI237402B (en) 2004-03-24 2005-08-01 Epistar Corp High luminant device
US7385226B2 (en) 2004-03-24 2008-06-10 Epistar Corporation Light-emitting device
US9508902B2 (en) 2005-02-21 2016-11-29 Epistar Corporation Optoelectronic semiconductor device
US8097897B2 (en) 2005-06-21 2012-01-17 Epistar Corporation High-efficiency light-emitting device and manufacturing method thereof
KR100610950B1 (ko) 2005-02-25 2006-08-09 엘에스전선 주식회사 열방출 구조가 개선된 레이저 다이오드 및 그 제조방법
KR100673873B1 (ko) * 2005-05-12 2007-01-25 삼성코닝 주식회사 열전도도가 우수한 질화갈륨 단결정 기판
JP2009238820A (ja) * 2008-03-26 2009-10-15 Sony Corp 半導体レーザ装置およびその製造方法
CN103493224A (zh) 2012-02-23 2014-01-01 松下电器产业株式会社 氮化物半导体发光芯片、氮化物半导体发光装置及氮化物半导体芯片的制造方法
DE102016110790B4 (de) * 2016-06-13 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
WO2024261803A1 (ja) * 2023-06-19 2024-12-26 日本電信電話株式会社 半導体デバイス

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