CN102082222A - 发光二极管芯片及其制造方法 - Google Patents
发光二极管芯片及其制造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001124569 Lycaenidae Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 235000014987 copper Nutrition 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Abstract
一种发光二极管芯片,包括基板及具有p-n结的半导体发光结构,基板包括相对设置的第一表面及第二表面,该具有p-n结的半导体发光结构形成于该基板的第一表面上,基板的第二表面形成若干盲孔,每一盲孔内填充导热材料以形成导热柱。与现有技术相比,本发明的基板上形成导热柱,提高基板的热传导系数,增强基板的导热性能。本发明还公开一种发光二极管芯片的制造方法。
Description
技术领域
本发明涉及一种半导体发光元件,尤其涉及一种发光二极管芯片及其制造方法。
背景技术
随着发光二极管器件逐步应用于大功率照明,发光二极管器件产生越来越多的热量,如果不能有效散发发光二极管器件所产生的热量,将降低发光二极管的使用寿命。然,发光二极管的基板通常采用蓝宝石,蓝宝石的热传导系数相对较低,其导热性能并不能完全满足大功率发光二极管器件的散热需要。
发明内容
有鉴于此,有必要提供一种散热性能较佳的发光二极管芯片及其制造方法。
一种发光二极管芯片,包括基板及具有p-n结的半导体发光结构,基板包括相对设置的第一表面及第二表面,该具有p-n结的半导体发光结构形成于该基板的第一表面上,基板的第二表面形成若干盲孔,每一盲孔内填充导热材料以形成导热柱。
一种发光二极管芯片的制造方法,包括:提供一基板,该基板包括相对设置的第一表面及第二表面,该基板的第一表面上形成具有p-n结的半导体发光结构;该基板的第二表面形成若干盲孔;每一盲孔内填充导热材料形成导热柱。
与现有技术相比,本发明的基板上形成导热柱,提高基板的热传导系数,增强基板的导热性能。
附图说明
图1为本发明发光二极管芯片一较佳实施例的剖面示意图。
图2为本发明发光二极管芯片制造方法的流程图。
主要元件符号说明
具体实施方式
请参阅图1,发光二极管芯片1包括基板10及具有p-n结的半导体发光结构15。基板10为蓝宝石基板,基板10包括相对设置的第一表面103及第二表面104,该具有p-n结的半导体发光结构15形成于该基板10的第一表面103上。
在本实施方式中,该具有p-n结的半导体发光结构15为氮化镓系III-V族化合物半导体,该具有p-n结的半导体发光结构15包括n型半导体层11、活性层12、p型半导体层13、第一电极141及第二电极142,n型半导体层11、活性层12及p型半导体层13依次堆叠于基板10的第一表面103上,第一电极141与n型半导体层11连接,第二电极142与p型半导体层13连接。n型半导体层11形成于基板10的第一表面103之上,活性层12形成于n型半导体层11之上,p型半导体层13形成于活性层12之上,将p型半导体层13、活性层12及n型半导体层11的表面于一侧腐蚀去除一部分,露出部分n型半导体层11的表面,第一电极141形成于露出的n型半导体层110的表面上,第二电极142形成于p型半导体层13之上。基板10的第二表面104形成若干盲孔101,每一盲孔101内填充导热材料以形成导热柱102。导热柱102优选铜作为材料。发光二极管芯片1工作时产生的热量可以通过导热柱102传导至下方,增加蓝宝石基板10的传热效率。
如图2所示,上述发光二极管芯片1的制造方法包括以下步骤:首先,提供一基板10,该基板10包括相对设置的第一表面103及第二表面104,该基板10的第一表面103上形成具有p-n结的半导体发光结构15;其次,在该基板10的第二表面104蚀刻形成若干盲孔101;最后,在每一盲孔101内填充导热材料以形成导热柱102。在本实施方式中,采用在每一盲孔101内电镀铜等高导热金属材料以形成导热柱102。
另,本领域技术人员还可于本发明精神内做其它变化,只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (8)
1.一种发光二极管芯片,包括基板及具有p-n结的半导体发光结构,基板包括相对设置的第一表面及第二表面,该具有p-n结的半导体发光结构形成于该基板的第一表面上,其特征在于:基板的第二表面形成若干盲孔,每一盲孔内填充导热材料以形成导热柱。
2.如权利要求1所述的发光二极管芯片,其特征在于:该导热材料为铜。
3.如权利要求1所述的发光二极管芯片,其特征在于:该基板为蓝宝石基板。
4.如权利要求1所述的发光二极管芯片,其特征在于:该具有p-n结的半导体发光结构包括n型半导体层、p型半导体层、第一电极及第二电极,n型半导体层及p型半导体层堆叠于基板的第一表面上,第一电极与n型半导体层连接,第二电极与p型半导体层连接。
5.如权利要求4所述的发光二极管芯片,其特征在于:该n型半导体层及p型半导体层之间具有活性层。
6.一种发光二极管芯片的制造方法,包括:
提供一基板,该基板包括相对设置的第一表面及第二表面,该基板的第一表面上形成具有p-n结的半导体发光结构;
该基板的第二表面形成若干盲孔;
每一盲孔内填充导热材料形成导热柱。
7.如权利要求6所述的发光二极管芯片的制造方法,其特征在于:采用蚀刻方式在该基板的第二表面形成该若干盲孔。
8.如权利要求6所述的发光二极管芯片的制造方法,其特征在于:该导热柱是在每一盲孔内镀铜形成。
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CN200910310725XA CN102082222A (zh) | 2009-12-01 | 2009-12-01 | 发光二极管芯片及其制造方法 |
US12/649,549 US8076675B2 (en) | 2009-12-01 | 2009-12-30 | Light-emitting diode chip and method of manufacturing the same |
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CN200910310725XA CN102082222A (zh) | 2009-12-01 | 2009-12-01 | 发光二极管芯片及其制造方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109560457A (zh) * | 2018-09-30 | 2019-04-02 | 厦门市三安集成电路有限公司 | 一种面射型激光器芯片的散热结构及其制作方法 |
CN111033748A (zh) * | 2019-11-26 | 2020-04-17 | 重庆康佳光电技术研究院有限公司 | 一种发光二极体组件及其制备方法、显示器的制备方法 |
CN112382665A (zh) * | 2020-11-03 | 2021-02-19 | 广东省科学院半导体研究所 | 一种氧化镓基mosfet器件及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6015979A (en) * | 1997-08-29 | 2000-01-18 | Kabushiki Kaisha Toshiba | Nitride-based semiconductor element and method for manufacturing the same |
JP2000331947A (ja) * | 1999-03-17 | 2000-11-30 | Mitsubishi Cable Ind Ltd | 半導体基材及びその作製方法 |
CN1707820A (zh) * | 2005-04-29 | 2005-12-14 | 清华大学 | GaN基发光器件制作方法及其器件结构 |
Family Cites Families (3)
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US20020017653A1 (en) * | 1999-08-26 | 2002-02-14 | Feng-Ju Chuang | Blue light emitting diode with sapphire substrate and method for making the same |
US7029951B2 (en) * | 2003-09-12 | 2006-04-18 | International Business Machines Corporation | Cooling system for a semiconductor device and method of fabricating same |
KR100716790B1 (ko) * | 2005-09-26 | 2007-05-14 | 삼성전기주식회사 | 질화갈륨계 반도체 발광소자 및 그 제조방법 |
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- 2009-12-01 CN CN200910310725XA patent/CN102082222A/zh active Pending
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6015979A (en) * | 1997-08-29 | 2000-01-18 | Kabushiki Kaisha Toshiba | Nitride-based semiconductor element and method for manufacturing the same |
JP2000331947A (ja) * | 1999-03-17 | 2000-11-30 | Mitsubishi Cable Ind Ltd | 半導体基材及びその作製方法 |
CN1707820A (zh) * | 2005-04-29 | 2005-12-14 | 清华大学 | GaN基发光器件制作方法及其器件结构 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109560457A (zh) * | 2018-09-30 | 2019-04-02 | 厦门市三安集成电路有限公司 | 一种面射型激光器芯片的散热结构及其制作方法 |
CN111033748A (zh) * | 2019-11-26 | 2020-04-17 | 重庆康佳光电技术研究院有限公司 | 一种发光二极体组件及其制备方法、显示器的制备方法 |
CN112382665A (zh) * | 2020-11-03 | 2021-02-19 | 广东省科学院半导体研究所 | 一种氧化镓基mosfet器件及其制作方法 |
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US8076675B2 (en) | 2011-12-13 |
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