CN115461945A - 激光器组件 - Google Patents
激光器组件 Download PDFInfo
- Publication number
- CN115461945A CN115461945A CN202180029641.8A CN202180029641A CN115461945A CN 115461945 A CN115461945 A CN 115461945A CN 202180029641 A CN202180029641 A CN 202180029641A CN 115461945 A CN115461945 A CN 115461945A
- Authority
- CN
- China
- Prior art keywords
- light emitting
- light
- emitting chip
- bottom plate
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 43
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 230000017525 heat dissipation Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 230000000994 depressogenic effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 5
- 238000005253 cladding Methods 0.000 description 4
- 239000011859 microparticle Substances 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZBTDWLVGWJNPQM-UHFFFAOYSA-N [Ni].[Cu].[Au] Chemical compound [Ni].[Cu].[Au] ZBTDWLVGWJNPQM-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/0222—Gas-filled housings
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
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- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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- H01S5/00—Semiconductor lasers
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- H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02335—Up-side up mountings, e.g. epi-side up mountings or junction up mountings
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Abstract
一种激光器组件（10），包括：底板（101）、热沉（102）和发光芯片（103），热沉（102）贴装在底板（101）上，发光芯片（103）贴装在热沉远离底板（101）的一侧；发光芯片（103）中与热沉（102）的接触面为凹凸表面。
Description
PCT国内申请，说明书已公开。
Claims (12)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010318102.3A CN113540962B (zh) | 2020-04-21 | 2020-04-21 | 激光器组件 |
| CN2020103181023 | 2020-04-21 | ||
| PCT/CN2021/082163 WO2021213107A1 (zh) | 2020-04-21 | 2021-03-22 | 激光器组件 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115461945A true CN115461945A (zh) | 2022-12-09 |
Family
ID=78123835
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310820854.3A Pending CN116979363A (zh) | 2020-04-21 | 2020-04-21 | 激光器组件 |
| CN202010318102.3A Active CN113540962B (zh) | 2020-04-21 | 2020-04-21 | 激光器组件 |
| CN202180029641.8A Pending CN115461945A (zh) | 2020-04-21 | 2021-03-22 | 激光器组件 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310820854.3A Pending CN116979363A (zh) | 2020-04-21 | 2020-04-21 | 激光器组件 |
| CN202010318102.3A Active CN113540962B (zh) | 2020-04-21 | 2020-04-21 | 激光器组件 |
Country Status (2)
| Country | Link |
|---|---|
| CN (3) | CN116979363A (zh) |
| WO (1) | WO2021213107A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003086883A (ja) * | 2001-09-10 | 2003-03-20 | Sony Corp | 半導体レーザ装置 |
| JP2005142224A (ja) * | 2003-11-04 | 2005-06-02 | Denso Corp | 半導体レーザ素子の実装方法 |
| CN103208470A (zh) * | 2012-03-30 | 2013-07-17 | 江苏汉莱科技有限公司 | 一种非介质嵌合导热方法及其应用 |
| CN206312938U (zh) * | 2016-12-28 | 2017-07-07 | 浙江长兴金盛光电科技有限公司 | 一种大功率倒装led光源 |
| CN208835449U (zh) * | 2018-09-25 | 2019-05-07 | 南昌欧菲生物识别技术有限公司 | 发光模组及智能终端 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI398956B (zh) * | 2009-03-10 | 2013-06-11 | Kinik Co | 具有鑽石材料之散熱結構及其製造方法 |
| CN102694341A (zh) * | 2011-03-25 | 2012-09-26 | 长春理工大学 | 一种刻蚀散热增强型垂直腔面发射激光器 |
| CN202352675U (zh) * | 2011-11-16 | 2012-07-25 | 广州市鸿利光电股份有限公司 | 一种功率型led支架及led |
| CN202513207U (zh) * | 2012-04-11 | 2012-10-31 | 深圳市兆驰股份有限公司 | Led封装结构 |
| CN104078837B (zh) * | 2013-03-29 | 2017-12-15 | 山东华光光电子股份有限公司 | 一种GaN基蓝绿光激光二极管器件及制作方法 |
| CN103427330B (zh) * | 2013-07-17 | 2016-06-08 | 芜湖安瑞激光科技有限公司 | 降低应力的激光器芯片结构和热沉结构及其制备方法 |
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2020
- 2020-04-21 CN CN202310820854.3A patent/CN116979363A/zh active Pending
- 2020-04-21 CN CN202010318102.3A patent/CN113540962B/zh active Active
-
2021
- 2021-03-22 CN CN202180029641.8A patent/CN115461945A/zh active Pending
- 2021-03-22 WO PCT/CN2021/082163 patent/WO2021213107A1/zh active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003086883A (ja) * | 2001-09-10 | 2003-03-20 | Sony Corp | 半導体レーザ装置 |
| JP2005142224A (ja) * | 2003-11-04 | 2005-06-02 | Denso Corp | 半導体レーザ素子の実装方法 |
| CN103208470A (zh) * | 2012-03-30 | 2013-07-17 | 江苏汉莱科技有限公司 | 一种非介质嵌合导热方法及其应用 |
| CN206312938U (zh) * | 2016-12-28 | 2017-07-07 | 浙江长兴金盛光电科技有限公司 | 一种大功率倒装led光源 |
| CN208835449U (zh) * | 2018-09-25 | 2019-05-07 | 南昌欧菲生物识别技术有限公司 | 发光模组及智能终端 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021213107A1 (zh) | 2021-10-28 |
| CN113540962A (zh) | 2021-10-22 |
| CN113540962B (zh) | 2023-07-28 |
| CN116979363A (zh) | 2023-10-31 |
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