JP2008210992A5 - - Google Patents

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Publication number
JP2008210992A5
JP2008210992A5 JP2007046260A JP2007046260A JP2008210992A5 JP 2008210992 A5 JP2008210992 A5 JP 2008210992A5 JP 2007046260 A JP2007046260 A JP 2007046260A JP 2007046260 A JP2007046260 A JP 2007046260A JP 2008210992 A5 JP2008210992 A5 JP 2008210992A5
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JP
Japan
Prior art keywords
nitride semiconductor
protective film
semiconductor laser
region
element according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2007046260A
Other languages
English (en)
Japanese (ja)
Other versions
JP5670009B2 (ja
JP2008210992A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2007046260A external-priority patent/JP5670009B2/ja
Priority to JP2007046260A priority Critical patent/JP5670009B2/ja
Priority to US12/033,404 priority patent/US7764722B2/en
Priority to KR1020080016891A priority patent/KR101407885B1/ko
Priority to EP08151908A priority patent/EP1962395B1/en
Priority to EP09158504A priority patent/EP2086076B1/en
Priority to CN2008100808963A priority patent/CN101257186B/zh
Publication of JP2008210992A publication Critical patent/JP2008210992A/ja
Publication of JP2008210992A5 publication Critical patent/JP2008210992A5/ja
Publication of JP5670009B2 publication Critical patent/JP5670009B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007046260A 2007-02-26 2007-02-26 窒化物半導体レーザ素子 Active JP5670009B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007046260A JP5670009B2 (ja) 2007-02-26 2007-02-26 窒化物半導体レーザ素子
US12/033,404 US7764722B2 (en) 2007-02-26 2008-02-19 Nitride semiconductor laser element
EP09158504A EP2086076B1 (en) 2007-02-26 2008-02-25 Nitride semiconductor laser element
EP08151908A EP1962395B1 (en) 2007-02-26 2008-02-25 Nitride semiconductor laser element
KR1020080016891A KR101407885B1 (ko) 2007-02-26 2008-02-25 질화물 반도체 레이저 소자
CN2008100808963A CN101257186B (zh) 2007-02-26 2008-02-26 氮化物半导体激光器元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007046260A JP5670009B2 (ja) 2007-02-26 2007-02-26 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2008210992A JP2008210992A (ja) 2008-09-11
JP2008210992A5 true JP2008210992A5 (enExample) 2010-03-18
JP5670009B2 JP5670009B2 (ja) 2015-02-18

Family

ID=39787044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007046260A Active JP5670009B2 (ja) 2007-02-26 2007-02-26 窒化物半導体レーザ素子

Country Status (2)

Country Link
JP (1) JP5670009B2 (enExample)
CN (1) CN101257186B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5572919B2 (ja) * 2007-06-07 2014-08-20 日亜化学工業株式会社 窒化物半導体レーザ素子
DE102012102305B4 (de) * 2012-03-19 2025-07-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
WO2019159449A1 (ja) 2018-02-14 2019-08-22 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子及び照明光源モジュール
US10418781B1 (en) * 2018-07-06 2019-09-17 Ii-Vi Delaware, Inc. Quantum well passivation structure for laser facets
CN114453740B (zh) * 2022-02-25 2023-10-17 中国人民解放军国防科技大学 一种基于激光熔接的石英谐振子的装配装置及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62254480A (ja) * 1986-04-28 1987-11-06 Hitachi Ltd 半導体レ−ザ装置
JP2742100B2 (ja) * 1989-08-18 1998-04-22 株式会社リコー マスク半導体レーザ
JP3381073B2 (ja) * 1992-09-28 2003-02-24 ソニー株式会社 半導体レーザ装置とその製造方法
ATE487255T1 (de) * 2001-05-31 2010-11-15 Nichia Corp Halbleiterlaserelement
JP4529372B2 (ja) * 2003-04-23 2010-08-25 日亜化学工業株式会社 半導体レーザ素子
JP4451371B2 (ja) * 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
JP5285835B2 (ja) * 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法

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