JP2007531031A5 - - Google Patents

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Publication number
JP2007531031A5
JP2007531031A5 JP2007505588A JP2007505588A JP2007531031A5 JP 2007531031 A5 JP2007531031 A5 JP 2007531031A5 JP 2007505588 A JP2007505588 A JP 2007505588A JP 2007505588 A JP2007505588 A JP 2007505588A JP 2007531031 A5 JP2007531031 A5 JP 2007531031A5
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JP
Japan
Prior art keywords
doped
optoelectronic component
component according
active region
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007505588A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007531031A (ja
JP5154921B2 (ja
Filing date
Publication date
Priority claimed from FR0450608A external-priority patent/FR2868171B1/fr
Application filed filed Critical
Publication of JP2007531031A publication Critical patent/JP2007531031A/ja
Publication of JP2007531031A5 publication Critical patent/JP2007531031A5/ja
Application granted granted Critical
Publication of JP5154921B2 publication Critical patent/JP5154921B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007505588A 2004-03-29 2005-03-29 シリコン上に集積された高周波オプトエレクトロニク変調器 Expired - Fee Related JP5154921B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0450608 2004-03-29
FR0450608A FR2868171B1 (fr) 2004-03-29 2004-03-29 Modulateur optoelectronique haute frequence integre sur silicium
PCT/FR2005/000748 WO2005093480A1 (fr) 2004-03-29 2005-03-29 Modulateur optoelectronique haute frequence integre sur silicium

Publications (3)

Publication Number Publication Date
JP2007531031A JP2007531031A (ja) 2007-11-01
JP2007531031A5 true JP2007531031A5 (enExample) 2008-03-27
JP5154921B2 JP5154921B2 (ja) 2013-02-27

Family

ID=34944281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007505588A Expired - Fee Related JP5154921B2 (ja) 2004-03-29 2005-03-29 シリコン上に集積された高周波オプトエレクトロニク変調器

Country Status (7)

Country Link
US (1) US7657146B2 (enExample)
EP (1) EP1730560B1 (enExample)
JP (1) JP5154921B2 (enExample)
AT (1) ATE384282T1 (enExample)
DE (1) DE602005004392T2 (enExample)
FR (1) FR2868171B1 (enExample)
WO (1) WO2005093480A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5265929B2 (ja) * 2008-01-10 2013-08-14 Ｎｔｔエレクトロニクス株式会社 半導体光変調器及び光変調装置
FR2935845B1 (fr) 2008-09-05 2010-09-10 Centre Nat Rech Scient Cavite optique amplificatrice de type fabry-perot
FR2937427B1 (fr) 2008-10-17 2011-03-04 Commissariat Energie Atomique Procede de fabrication d'un modulateur electro-optique lateral sur silicium a zones implantees auto-alignees
FR2943802B1 (fr) * 2009-03-24 2011-09-30 Univ Paris Sud Modulateur optique a haut debit en semi-conducteur sur isolant
US8548281B2 (en) * 2009-09-08 2013-10-01 Electronics And Telecommunications Research Institute Electro-optic modulating device
KR101453473B1 (ko) 2009-09-08 2014-10-24 한국전자통신연구원 전기-광학 변조 소자
FR2950708B1 (fr) 2009-09-29 2012-03-09 Univ Paris Sud Modulateur optique compact a haut debit en semi-conducteur sur isolant.
JP5577909B2 (ja) * 2010-07-22 2014-08-27 富士通株式会社 光半導体装置及びその製造方法
JP5633224B2 (ja) * 2010-07-22 2014-12-03 富士通株式会社 光半導体装置及びその駆動方法
JP6209843B2 (ja) * 2013-03-29 2017-10-11 住友電気工業株式会社 半導体変調器を作製する方法、半導体変調器
JP6236947B2 (ja) * 2013-07-16 2017-11-29 住友電気工業株式会社 半導体光素子を製造する方法、および半導体光素子
US9766484B2 (en) * 2014-01-24 2017-09-19 Cisco Technology, Inc. Electro-optical modulator using waveguides with overlapping ridges
GB2566781B (en) * 2015-11-12 2020-06-03 Rockley Photonics Ltd An optoelectronic component
WO2018045300A1 (en) * 2016-09-01 2018-03-08 Luxtera, Inc. Method and system for a vertical junction high-speed phase modulator
GB2559252B (en) * 2016-12-02 2020-06-03 Rockley Photonics Ltd Waveguide optoelectronic device
US9798166B1 (en) * 2017-01-24 2017-10-24 Mellanox Technologies Silicon Photonics Inc. Attenuator with improved fabrication consistency
US10739622B2 (en) * 2018-12-28 2020-08-11 Juniper Networks, Inc. Integrated optoelectronic device with heater
CN112201714A (zh) * 2020-09-28 2021-01-08 三明学院 一种探测器及制作工艺
US12353069B2 (en) * 2021-05-06 2025-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Waveguide having doped pillar structures to improve modulator efficiency

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4974044A (en) * 1989-04-21 1990-11-27 At&T Bell Laboratories Devices having asymmetric delta-doping
US4997246A (en) * 1989-12-21 1991-03-05 International Business Machines Corporation Silicon-based rib waveguide optical modulator
EP1107044A1 (en) * 1999-11-30 2001-06-13 Hitachi Europe Limited Photonic device
JP2001274511A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 導波路型光素子
JP4547765B2 (ja) * 2000-03-30 2010-09-22 三菱電機株式会社 光変調器及び光変調器付半導体レーザ装置、並びに光通信装置
JP4828018B2 (ja) * 2000-11-06 2011-11-30 三菱電機株式会社 光変調器およびその製造方法並びに光半導体装置
WO2002069004A2 (en) 2001-02-22 2002-09-06 Bookham Technology Plc Semiconductor optical waveguide device

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