JP2007288089A5 - - Google Patents

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Publication number
JP2007288089A5
JP2007288089A5 JP2006116473A JP2006116473A JP2007288089A5 JP 2007288089 A5 JP2007288089 A5 JP 2007288089A5 JP 2006116473 A JP2006116473 A JP 2006116473A JP 2006116473 A JP2006116473 A JP 2006116473A JP 2007288089 A5 JP2007288089 A5 JP 2007288089A5
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JP
Japan
Prior art keywords
optical element
semiconductor substrate
semiconductor layer
active region
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006116473A
Other languages
English (en)
Japanese (ja)
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JP2007288089A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006116473A priority Critical patent/JP2007288089A/ja
Priority claimed from JP2006116473A external-priority patent/JP2007288089A/ja
Priority to US11/785,926 priority patent/US20070249109A1/en
Publication of JP2007288089A publication Critical patent/JP2007288089A/ja
Publication of JP2007288089A5 publication Critical patent/JP2007288089A5/ja
Pending legal-status Critical Current

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JP2006116473A 2006-04-20 2006-04-20 光素子および光モジュール Pending JP2007288089A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006116473A JP2007288089A (ja) 2006-04-20 2006-04-20 光素子および光モジュール
US11/785,926 US20070249109A1 (en) 2006-04-20 2007-04-20 Optical device and optical module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006116473A JP2007288089A (ja) 2006-04-20 2006-04-20 光素子および光モジュール

Publications (2)

Publication Number Publication Date
JP2007288089A JP2007288089A (ja) 2007-11-01
JP2007288089A5 true JP2007288089A5 (enExample) 2009-03-12

Family

ID=38619973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006116473A Pending JP2007288089A (ja) 2006-04-20 2006-04-20 光素子および光モジュール

Country Status (2)

Country Link
US (1) US20070249109A1 (enExample)
JP (1) JP2007288089A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112009003719T5 (de) * 2008-12-10 2012-08-16 Furukawa Electric Co., Ltd., Halbleiterlaserelement und herstellungsverfahren dafür
US7949024B2 (en) * 2009-02-17 2011-05-24 Trilumina Corporation Multibeam arrays of optoelectronic devices for high frequency operation
JP2010267647A (ja) * 2009-05-12 2010-11-25 Opnext Japan Inc 半導体装置
JP5515767B2 (ja) * 2009-05-28 2014-06-11 株式会社リコー 面発光レーザ素子の製造方法、面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP2011233783A (ja) * 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
JP5982711B2 (ja) * 2011-04-28 2016-08-31 住友電工デバイス・イノベーション株式会社 半導体受光装置
US10622302B2 (en) 2018-02-14 2020-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Via for semiconductor device connection and methods of forming the same
DE102018126130B4 (de) 2018-06-08 2023-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und -verfahren
US10992100B2 (en) * 2018-07-06 2021-04-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
JP7434710B2 (ja) * 2019-02-07 2024-02-21 富士フイルムビジネスイノベーション株式会社 光半導体素子、光半導体装置、光伝送システム、および光半導体装置の製造方法
US11441484B2 (en) * 2019-03-20 2022-09-13 Seoul Viosys Co., Ltd. Vertical-cavity surface-emitting laser device
GB2590350B (en) * 2019-11-06 2024-08-07 Integrated Compound Semiconductors Ltd High reliability MESA photodiode
JP2022149786A (ja) * 2021-03-25 2022-10-07 聯嘉光電股▲ふん▼有限公司 テスト可能で側壁を保護する金属層を備える垂直型発光ダイオード構造
JP2024106499A (ja) * 2023-01-27 2024-08-08 ウシオ電機株式会社 赤外ｌｅｄ素子
US20240332900A1 (en) * 2023-03-27 2024-10-03 Ii-Vi Delaware, Inc. Bottom surface emitting vertical cavity surface emitting laser

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104178A (ja) * 1985-10-31 1987-05-14 Fujitsu Ltd Ｐｉｎホトダイオ−ド
JP4220688B2 (ja) * 2001-02-26 2009-02-04 日本オプネクスト株式会社 アバランシェホトダイオード
EP2290715B1 (en) * 2002-08-01 2019-01-23 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
JP4109159B2 (ja) * 2003-06-13 2008-07-02 浜松ホトニクス株式会社 半導体受光素子
JP4318981B2 (ja) * 2003-07-29 2009-08-26 三菱電機株式会社 導波路型受光素子
JP2005108983A (ja) * 2003-09-29 2005-04-21 Victor Co Of Japan Ltd 面発光レーザ素子
JP4837295B2 (ja) * 2005-03-02 2011-12-14 株式会社沖データ 半導体装置、ｌｅｄ装置、ｌｅｄヘッド、及び画像形成装置

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