ATE504027T1 - Optischer halbleitermodulator mit npin-struktur - Google Patents
Optischer halbleitermodulator mit npin-strukturInfo
- Publication number
- ATE504027T1 ATE504027T1 AT07830486T AT07830486T ATE504027T1 AT E504027 T1 ATE504027 T1 AT E504027T1 AT 07830486 T AT07830486 T AT 07830486T AT 07830486 T AT07830486 T AT 07830486T AT E504027 T1 ATE504027 T1 AT E504027T1
- Authority
- AT
- Austria
- Prior art keywords
- type
- npin
- optical modulator
- cladding layer
- type cladding
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/101—Ga×As and alloy
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006288839A JP4870518B2 (ja) | 2006-10-24 | 2006-10-24 | 半導体光変調器 |
| PCT/JP2007/070752 WO2008050809A1 (en) | 2006-10-24 | 2007-10-24 | Semiconductor optical modulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE504027T1 true ATE504027T1 (de) | 2011-04-15 |
Family
ID=39324603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07830486T ATE504027T1 (de) | 2006-10-24 | 2007-10-24 | Optischer halbleitermodulator mit npin-struktur |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8031984B2 (de) |
| EP (1) | EP2081075B1 (de) |
| JP (1) | JP4870518B2 (de) |
| KR (1) | KR101045758B1 (de) |
| CN (1) | CN101529313B (de) |
| AT (1) | ATE504027T1 (de) |
| DE (1) | DE602007013595D1 (de) |
| WO (1) | WO2008050809A1 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4870518B2 (ja) * | 2006-10-24 | 2012-02-08 | Nttエレクトロニクス株式会社 | 半導体光変調器 |
| US9151592B2 (en) | 2012-01-03 | 2015-10-06 | Skorpios Technologies, Inc. | Method and system for multiple resonance interferometer |
| US9568750B2 (en) | 2012-04-13 | 2017-02-14 | Skorpios Technologies, Inc. | Hybrid optical modulator |
| WO2016078057A1 (zh) * | 2014-11-20 | 2016-05-26 | 华为技术有限公司 | 一种InP基调制器 |
| KR102163885B1 (ko) * | 2015-01-14 | 2020-10-13 | 한국전자통신연구원 | 전계흡수 광변조 소자 및 그 제조 방법 |
| WO2016194369A1 (ja) | 2015-06-02 | 2016-12-08 | 日本電信電話株式会社 | 半導体光変調素子 |
| JP2017167359A (ja) * | 2016-03-16 | 2017-09-21 | 日本電信電話株式会社 | リッジ導波路型光変調器 |
| WO2017183568A1 (ja) * | 2016-04-19 | 2017-10-26 | 日本電信電話株式会社 | 光導波路集積受光素子およびその製造方法 |
| JP2018189780A (ja) * | 2017-05-01 | 2018-11-29 | 日本電信電話株式会社 | 化合物半導体系光変調素子 |
| CN114503020B (zh) * | 2019-07-24 | 2025-12-05 | 洛克利光子有限公司 | 电光调制器 |
| EP4030225B1 (de) * | 2019-09-12 | 2024-03-27 | Nippon Telegraph And Telephone Corporation | Optischer mach-zehnder-halbleitermodulator und iq-modulator |
| CN113066889B (zh) * | 2021-03-15 | 2022-12-06 | 中国科学院半导体研究所 | 基于硅基PIN探测器的n-p-i-n光电三极管及其制备方法 |
| WO2022233396A1 (en) | 2021-05-04 | 2022-11-10 | Huawei Technologies Co., Ltd. | High speed membrane electro-optic modulator apparatus and method of manufacture |
| US11949036B2 (en) * | 2022-04-11 | 2024-04-02 | Ciena Corporation | Suppression of phototransistor gain in an optical modulator |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03156988A (ja) * | 1989-11-15 | 1991-07-04 | Fujitsu Ltd | 半導体レーザ |
| US5034783A (en) * | 1990-07-27 | 1991-07-23 | At&T Bell Laboratories | Semiconductor device including cascadable polarization independent heterostructure |
| JP3904947B2 (ja) * | 2002-03-01 | 2007-04-11 | 三菱電機株式会社 | 光変調器 |
| EP1602963B1 (de) | 2003-03-11 | 2012-07-11 | Nippon Telegraph And Telephone Corporation | Optischer halbleitermodulator |
| JP4047785B2 (ja) | 2003-09-24 | 2008-02-13 | Nttエレクトロニクス株式会社 | 半導体光電子導波路 |
| WO2005033784A1 (ja) | 2003-10-03 | 2005-04-14 | Ntt Electronics Corporation | 半導体光電子導波路 |
| JP4105618B2 (ja) * | 2003-10-03 | 2008-06-25 | Nttエレクトロニクス株式会社 | 半導体光変調導波路 |
| JP2005116644A (ja) | 2003-10-03 | 2005-04-28 | Ntt Electornics Corp | 半導体光電子導波路 |
| US7425726B2 (en) * | 2004-05-19 | 2008-09-16 | Avago Technologies Fiber Ip Pte Ltd. | Electroabsorption modulators and methods of making the same |
| CN101133355B (zh) * | 2005-03-08 | 2011-02-02 | 日本电信电话株式会社 | 半导体光调制器 |
| JP4870518B2 (ja) * | 2006-10-24 | 2012-02-08 | Nttエレクトロニクス株式会社 | 半導体光変調器 |
| JP5265929B2 (ja) * | 2008-01-10 | 2013-08-14 | Nttエレクトロニクス株式会社 | 半導体光変調器及び光変調装置 |
-
2006
- 2006-10-24 JP JP2006288839A patent/JP4870518B2/ja not_active Expired - Fee Related
-
2007
- 2007-10-24 KR KR1020097007412A patent/KR101045758B1/ko not_active Expired - Fee Related
- 2007-10-24 EP EP07830486A patent/EP2081075B1/de not_active Not-in-force
- 2007-10-24 AT AT07830486T patent/ATE504027T1/de not_active IP Right Cessation
- 2007-10-24 DE DE602007013595T patent/DE602007013595D1/de active Active
- 2007-10-24 CN CN2007800389624A patent/CN101529313B/zh not_active Expired - Fee Related
- 2007-10-24 US US12/445,616 patent/US8031984B2/en active Active
- 2007-10-24 WO PCT/JP2007/070752 patent/WO2008050809A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| KR101045758B1 (ko) | 2011-06-30 |
| WO2008050809A1 (en) | 2008-05-02 |
| DE602007013595D1 (de) | 2011-05-12 |
| US20100296766A1 (en) | 2010-11-25 |
| US8031984B2 (en) | 2011-10-04 |
| CN101529313B (zh) | 2011-05-11 |
| KR20090055627A (ko) | 2009-06-02 |
| EP2081075A1 (de) | 2009-07-22 |
| CN101529313A (zh) | 2009-09-09 |
| JP4870518B2 (ja) | 2012-02-08 |
| EP2081075A4 (de) | 2009-12-02 |
| JP2008107468A (ja) | 2008-05-08 |
| EP2081075B1 (de) | 2011-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |