ATE504027T1 - Optischer halbleitermodulator mit npin-struktur - Google Patents

Optischer halbleitermodulator mit npin-struktur

Info

Publication number
ATE504027T1
ATE504027T1 AT07830486T AT07830486T ATE504027T1 AT E504027 T1 ATE504027 T1 AT E504027T1 AT 07830486 T AT07830486 T AT 07830486T AT 07830486 T AT07830486 T AT 07830486T AT E504027 T1 ATE504027 T1 AT E504027T1
Authority
AT
Austria
Prior art keywords
type
npin
optical modulator
cladding layer
type cladding
Prior art date
Application number
AT07830486T
Other languages
English (en)
Inventor
Tadao Ishibashi
Nobuhiro Kikuchi
Ken Tsuzuki
Original Assignee
Ntt Electronics Corp
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ntt Electronics Corp, Nippon Telegraph & Telephone filed Critical Ntt Electronics Corp
Application granted granted Critical
Publication of ATE504027T1 publication Critical patent/ATE504027T1/de

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/10Materials and properties semiconductor
    • G02F2202/101Ga×As and alloy

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
AT07830486T 2006-10-24 2007-10-24 Optischer halbleitermodulator mit npin-struktur ATE504027T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006288839A JP4870518B2 (ja) 2006-10-24 2006-10-24 半導体光変調器
PCT/JP2007/070752 WO2008050809A1 (en) 2006-10-24 2007-10-24 Semiconductor optical modulator

Publications (1)

Publication Number Publication Date
ATE504027T1 true ATE504027T1 (de) 2011-04-15

Family

ID=39324603

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07830486T ATE504027T1 (de) 2006-10-24 2007-10-24 Optischer halbleitermodulator mit npin-struktur

Country Status (8)

Country Link
US (1) US8031984B2 (de)
EP (1) EP2081075B1 (de)
JP (1) JP4870518B2 (de)
KR (1) KR101045758B1 (de)
CN (1) CN101529313B (de)
AT (1) ATE504027T1 (de)
DE (1) DE602007013595D1 (de)
WO (1) WO2008050809A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4870518B2 (ja) * 2006-10-24 2012-02-08 Nttエレクトロニクス株式会社 半導体光変調器
US9151592B2 (en) 2012-01-03 2015-10-06 Skorpios Technologies, Inc. Method and system for multiple resonance interferometer
US9568750B2 (en) 2012-04-13 2017-02-14 Skorpios Technologies, Inc. Hybrid optical modulator
WO2016078057A1 (zh) * 2014-11-20 2016-05-26 华为技术有限公司 一种InP基调制器
KR102163885B1 (ko) * 2015-01-14 2020-10-13 한국전자통신연구원 전계흡수 광변조 소자 및 그 제조 방법
WO2016194369A1 (ja) 2015-06-02 2016-12-08 日本電信電話株式会社 半導体光変調素子
JP2017167359A (ja) * 2016-03-16 2017-09-21 日本電信電話株式会社 リッジ導波路型光変調器
WO2017183568A1 (ja) * 2016-04-19 2017-10-26 日本電信電話株式会社 光導波路集積受光素子およびその製造方法
JP2018189780A (ja) * 2017-05-01 2018-11-29 日本電信電話株式会社 化合物半導体系光変調素子
CN114503020B (zh) * 2019-07-24 2025-12-05 洛克利光子有限公司 电光调制器
EP4030225B1 (de) * 2019-09-12 2024-03-27 Nippon Telegraph And Telephone Corporation Optischer mach-zehnder-halbleitermodulator und iq-modulator
CN113066889B (zh) * 2021-03-15 2022-12-06 中国科学院半导体研究所 基于硅基PIN探测器的n-p-i-n光电三极管及其制备方法
WO2022233396A1 (en) 2021-05-04 2022-11-10 Huawei Technologies Co., Ltd. High speed membrane electro-optic modulator apparatus and method of manufacture
US11949036B2 (en) * 2022-04-11 2024-04-02 Ciena Corporation Suppression of phototransistor gain in an optical modulator

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03156988A (ja) * 1989-11-15 1991-07-04 Fujitsu Ltd 半導体レーザ
US5034783A (en) * 1990-07-27 1991-07-23 At&T Bell Laboratories Semiconductor device including cascadable polarization independent heterostructure
JP3904947B2 (ja) * 2002-03-01 2007-04-11 三菱電機株式会社 光変調器
EP1602963B1 (de) 2003-03-11 2012-07-11 Nippon Telegraph And Telephone Corporation Optischer halbleitermodulator
JP4047785B2 (ja) 2003-09-24 2008-02-13 Nttエレクトロニクス株式会社 半導体光電子導波路
WO2005033784A1 (ja) 2003-10-03 2005-04-14 Ntt Electronics Corporation 半導体光電子導波路
JP4105618B2 (ja) * 2003-10-03 2008-06-25 Nttエレクトロニクス株式会社 半導体光変調導波路
JP2005116644A (ja) 2003-10-03 2005-04-28 Ntt Electornics Corp 半導体光電子導波路
US7425726B2 (en) * 2004-05-19 2008-09-16 Avago Technologies Fiber Ip Pte Ltd. Electroabsorption modulators and methods of making the same
CN101133355B (zh) * 2005-03-08 2011-02-02 日本电信电话株式会社 半导体光调制器
JP4870518B2 (ja) * 2006-10-24 2012-02-08 Nttエレクトロニクス株式会社 半導体光変調器
JP5265929B2 (ja) * 2008-01-10 2013-08-14 Nttエレクトロニクス株式会社 半導体光変調器及び光変調装置

Also Published As

Publication number Publication date
KR101045758B1 (ko) 2011-06-30
WO2008050809A1 (en) 2008-05-02
DE602007013595D1 (de) 2011-05-12
US20100296766A1 (en) 2010-11-25
US8031984B2 (en) 2011-10-04
CN101529313B (zh) 2011-05-11
KR20090055627A (ko) 2009-06-02
EP2081075A1 (de) 2009-07-22
CN101529313A (zh) 2009-09-09
JP4870518B2 (ja) 2012-02-08
EP2081075A4 (de) 2009-12-02
JP2008107468A (ja) 2008-05-08
EP2081075B1 (de) 2011-03-30

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