DE602005004392T2 - Integrierter optoelektronischer hochfrequenzmodulator auf silizium - Google Patents
Integrierter optoelektronischer hochfrequenzmodulator auf silizium Download PDFInfo
- Publication number
- DE602005004392T2 DE602005004392T2 DE602005004392T DE602005004392T DE602005004392T2 DE 602005004392 T2 DE602005004392 T2 DE 602005004392T2 DE 602005004392 T DE602005004392 T DE 602005004392T DE 602005004392 T DE602005004392 T DE 602005004392T DE 602005004392 T2 DE602005004392 T2 DE 602005004392T2
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- doped
- optoelectronic component
- component according
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 239000000969 carrier Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 230000012010 growth Effects 0.000 claims description 5
- 230000010287 polarization Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 238000004377 microelectronic Methods 0.000 description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 230000035484 reaction time Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/06—Materials and properties dopant
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0450608A FR2868171B1 (fr) | 2004-03-29 | 2004-03-29 | Modulateur optoelectronique haute frequence integre sur silicium |
| FR0450608 | 2004-03-29 | ||
| PCT/FR2005/000748 WO2005093480A1 (fr) | 2004-03-29 | 2005-03-29 | Modulateur optoelectronique haute frequence integre sur silicium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE602005004392D1 DE602005004392D1 (de) | 2008-03-06 |
| DE602005004392T2 true DE602005004392T2 (de) | 2009-01-15 |
Family
ID=34944281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602005004392T Expired - Lifetime DE602005004392T2 (de) | 2004-03-29 | 2005-03-29 | Integrierter optoelektronischer hochfrequenzmodulator auf silizium |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7657146B2 (enExample) |
| EP (1) | EP1730560B1 (enExample) |
| JP (1) | JP5154921B2 (enExample) |
| AT (1) | ATE384282T1 (enExample) |
| DE (1) | DE602005004392T2 (enExample) |
| FR (1) | FR2868171B1 (enExample) |
| WO (1) | WO2005093480A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5265929B2 (ja) * | 2008-01-10 | 2013-08-14 | Ｎｔｔエレクトロニクス株式会社 | 半導体光変調器及び光変調装置 |
| FR2935845B1 (fr) | 2008-09-05 | 2010-09-10 | Centre Nat Rech Scient | Cavite optique amplificatrice de type fabry-perot |
| FR2937427B1 (fr) | 2008-10-17 | 2011-03-04 | Commissariat Energie Atomique | Procede de fabrication d'un modulateur electro-optique lateral sur silicium a zones implantees auto-alignees |
| FR2943802B1 (fr) * | 2009-03-24 | 2011-09-30 | Univ Paris Sud | Modulateur optique a haut debit en semi-conducteur sur isolant |
| US8548281B2 (en) * | 2009-09-08 | 2013-10-01 | Electronics And Telecommunications Research Institute | Electro-optic modulating device |
| KR101453473B1 (ko) | 2009-09-08 | 2014-10-24 | 한국전자통신연구원 | 전기-광학 변조 소자 |
| FR2950708B1 (fr) | 2009-09-29 | 2012-03-09 | Univ Paris Sud | Modulateur optique compact a haut debit en semi-conducteur sur isolant. |
| JP5577909B2 (ja) * | 2010-07-22 | 2014-08-27 | 富士通株式会社 | 光半導体装置及びその製造方法 |
| JP5633224B2 (ja) * | 2010-07-22 | 2014-12-03 | 富士通株式会社 | 光半導体装置及びその駆動方法 |
| JP6209843B2 (ja) * | 2013-03-29 | 2017-10-11 | 住友電気工業株式会社 | 半導体変調器を作製する方法、半導体変調器 |
| JP6236947B2 (ja) * | 2013-07-16 | 2017-11-29 | 住友電気工業株式会社 | 半導体光素子を製造する方法、および半導体光素子 |
| US9766484B2 (en) * | 2014-01-24 | 2017-09-19 | Cisco Technology, Inc. | Electro-optical modulator using waveguides with overlapping ridges |
| GB2566781B (en) * | 2015-11-12 | 2020-06-03 | Rockley Photonics Ltd | An optoelectronic component |
| WO2018045300A1 (en) * | 2016-09-01 | 2018-03-08 | Luxtera, Inc. | Method and system for a vertical junction high-speed phase modulator |
| US11105975B2 (en) * | 2016-12-02 | 2021-08-31 | Rockley Photonics Limited | Waveguide optoelectronic device |
| US9798166B1 (en) * | 2017-01-24 | 2017-10-24 | Mellanox Technologies Silicon Photonics Inc. | Attenuator with improved fabrication consistency |
| US10739622B2 (en) * | 2018-12-28 | 2020-08-11 | Juniper Networks, Inc. | Integrated optoelectronic device with heater |
| CN112201714A (zh) * | 2020-09-28 | 2021-01-08 | 三明学院 | 一种探测器及制作工艺 |
| US12353069B2 (en) * | 2021-05-06 | 2025-07-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Waveguide having doped pillar structures to improve modulator efficiency |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4974044A (en) * | 1989-04-21 | 1990-11-27 | At&T Bell Laboratories | Devices having asymmetric delta-doping |
| US4997246A (en) * | 1989-12-21 | 1991-03-05 | International Business Machines Corporation | Silicon-based rib waveguide optical modulator |
| EP1107044A1 (en) * | 1999-11-30 | 2001-06-13 | Hitachi Europe Limited | Photonic device |
| JP2001274511A (ja) * | 2000-03-28 | 2001-10-05 | Toshiba Corp | 導波路型光素子 |
| JP4547765B2 (ja) * | 2000-03-30 | 2010-09-22 | 三菱電機株式会社 | 光変調器及び光変調器付半導体レーザ装置、並びに光通信装置 |
| JP4828018B2 (ja) * | 2000-11-06 | 2011-11-30 | 三菱電機株式会社 | 光変調器およびその製造方法並びに光半導体装置 |
| WO2002069004A2 (en) | 2001-02-22 | 2002-09-06 | Bookham Technology Plc | Semiconductor optical waveguide device |
-
2004
- 2004-03-29 FR FR0450608A patent/FR2868171B1/fr not_active Expired - Fee Related
-
2005
- 2005-03-29 JP JP2007505588A patent/JP5154921B2/ja not_active Expired - Fee Related
- 2005-03-29 EP EP05744257A patent/EP1730560B1/fr not_active Expired - Lifetime
- 2005-03-29 AT AT05744257T patent/ATE384282T1/de not_active IP Right Cessation
- 2005-03-29 WO PCT/FR2005/000748 patent/WO2005093480A1/fr not_active Ceased
- 2005-03-29 US US11/547,550 patent/US7657146B2/en not_active Expired - Lifetime
- 2005-03-29 DE DE602005004392T patent/DE602005004392T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1730560A1 (fr) | 2006-12-13 |
| US7657146B2 (en) | 2010-02-02 |
| FR2868171A1 (fr) | 2005-09-30 |
| JP2007531031A (ja) | 2007-11-01 |
| US20080260320A1 (en) | 2008-10-23 |
| EP1730560B1 (fr) | 2008-01-16 |
| JP5154921B2 (ja) | 2013-02-27 |
| FR2868171B1 (fr) | 2006-09-15 |
| WO2005093480A1 (fr) | 2005-10-06 |
| DE602005004392D1 (de) | 2008-03-06 |
| ATE384282T1 (de) | 2008-02-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |