FR2868171B1 - Modulateur optoelectronique haute frequence integre sur silicium - Google Patents

Modulateur optoelectronique haute frequence integre sur silicium

Info

Publication number
FR2868171B1
FR2868171B1 FR0450608A FR0450608A FR2868171B1 FR 2868171 B1 FR2868171 B1 FR 2868171B1 FR 0450608 A FR0450608 A FR 0450608A FR 0450608 A FR0450608 A FR 0450608A FR 2868171 B1 FR2868171 B1 FR 2868171B1
Authority
FR
France
Prior art keywords
silicon
controller
high frequency
zone
modulator integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0450608A
Other languages
English (en)
French (fr)
Other versions
FR2868171A1 (fr
Inventor
Suzette Laval
Delphine Marris
Eric Cassan
Daniel Pascal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Paris Sud
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Paris Sud
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0450608A priority Critical patent/FR2868171B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Paris Sud filed Critical Centre National de la Recherche Scientifique CNRS
Priority to US11/547,550 priority patent/US7657146B2/en
Priority to DE602005004392T priority patent/DE602005004392T2/de
Priority to AT05744257T priority patent/ATE384282T1/de
Priority to PCT/FR2005/000748 priority patent/WO2005093480A1/fr
Priority to JP2007505588A priority patent/JP5154921B2/ja
Priority to EP05744257A priority patent/EP1730560B1/fr
Publication of FR2868171A1 publication Critical patent/FR2868171A1/fr
Application granted granted Critical
Publication of FR2868171B1 publication Critical patent/FR2868171B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/06—Materials and properties dopant

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
FR0450608A 2004-03-29 2004-03-29 Modulateur optoelectronique haute frequence integre sur silicium Expired - Fee Related FR2868171B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0450608A FR2868171B1 (fr) 2004-03-29 2004-03-29 Modulateur optoelectronique haute frequence integre sur silicium
DE602005004392T DE602005004392T2 (de) 2004-03-29 2005-03-29 Integrierter optoelektronischer hochfrequenzmodulator auf silizium
AT05744257T ATE384282T1 (de) 2004-03-29 2005-03-29 Integrierter optoelektronischer hochfrequenzmodulator auf silizium
PCT/FR2005/000748 WO2005093480A1 (fr) 2004-03-29 2005-03-29 Modulateur optoelectronique haute frequence integre sur silicium
US11/547,550 US7657146B2 (en) 2004-03-29 2005-03-29 Optoelectric high frequency modulator integrated on silicon
JP2007505588A JP5154921B2 (ja) 2004-03-29 2005-03-29 シリコン上に集積された高周波オプトエレクトロニク変調器
EP05744257A EP1730560B1 (fr) 2004-03-29 2005-03-29 Modulateur optoelectronique haute frequence integre sur silicium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0450608A FR2868171B1 (fr) 2004-03-29 2004-03-29 Modulateur optoelectronique haute frequence integre sur silicium

Publications (2)

Publication Number Publication Date
FR2868171A1 FR2868171A1 (fr) 2005-09-30
FR2868171B1 true FR2868171B1 (fr) 2006-09-15

Family

ID=34944281

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0450608A Expired - Fee Related FR2868171B1 (fr) 2004-03-29 2004-03-29 Modulateur optoelectronique haute frequence integre sur silicium

Country Status (7)

Country Link
US (1) US7657146B2 (enExample)
EP (1) EP1730560B1 (enExample)
JP (1) JP5154921B2 (enExample)
AT (1) ATE384282T1 (enExample)
DE (1) DE602005004392T2 (enExample)
FR (1) FR2868171B1 (enExample)
WO (1) WO2005093480A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5265929B2 (ja) * 2008-01-10 2013-08-14 Ｎｔｔエレクトロニクス株式会社 半導体光変調器及び光変調装置
FR2935845B1 (fr) 2008-09-05 2010-09-10 Centre Nat Rech Scient Cavite optique amplificatrice de type fabry-perot
FR2937427B1 (fr) 2008-10-17 2011-03-04 Commissariat Energie Atomique Procede de fabrication d'un modulateur electro-optique lateral sur silicium a zones implantees auto-alignees
FR2943802B1 (fr) * 2009-03-24 2011-09-30 Univ Paris Sud Modulateur optique a haut debit en semi-conducteur sur isolant
US8548281B2 (en) * 2009-09-08 2013-10-01 Electronics And Telecommunications Research Institute Electro-optic modulating device
KR101453473B1 (ko) 2009-09-08 2014-10-24 한국전자통신연구원 전기-광학 변조 소자
FR2950708B1 (fr) 2009-09-29 2012-03-09 Univ Paris Sud Modulateur optique compact a haut debit en semi-conducteur sur isolant.
JP5577909B2 (ja) * 2010-07-22 2014-08-27 富士通株式会社 光半導体装置及びその製造方法
JP5633224B2 (ja) * 2010-07-22 2014-12-03 富士通株式会社 光半導体装置及びその駆動方法
JP6209843B2 (ja) * 2013-03-29 2017-10-11 住友電気工業株式会社 半導体変調器を作製する方法、半導体変調器
JP6236947B2 (ja) * 2013-07-16 2017-11-29 住友電気工業株式会社 半導体光素子を製造する方法、および半導体光素子
US9766484B2 (en) * 2014-01-24 2017-09-19 Cisco Technology, Inc. Electro-optical modulator using waveguides with overlapping ridges
GB2566781B (en) * 2015-11-12 2020-06-03 Rockley Photonics Ltd An optoelectronic component
WO2018045300A1 (en) * 2016-09-01 2018-03-08 Luxtera, Inc. Method and system for a vertical junction high-speed phase modulator
US11105975B2 (en) * 2016-12-02 2021-08-31 Rockley Photonics Limited Waveguide optoelectronic device
US9798166B1 (en) * 2017-01-24 2017-10-24 Mellanox Technologies Silicon Photonics Inc. Attenuator with improved fabrication consistency
US10739622B2 (en) * 2018-12-28 2020-08-11 Juniper Networks, Inc. Integrated optoelectronic device with heater
CN112201714A (zh) * 2020-09-28 2021-01-08 三明学院 一种探测器及制作工艺
US12353069B2 (en) * 2021-05-06 2025-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Waveguide having doped pillar structures to improve modulator efficiency

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4974044A (en) * 1989-04-21 1990-11-27 At&T Bell Laboratories Devices having asymmetric delta-doping
US4997246A (en) * 1989-12-21 1991-03-05 International Business Machines Corporation Silicon-based rib waveguide optical modulator
EP1107044A1 (en) * 1999-11-30 2001-06-13 Hitachi Europe Limited Photonic device
JP2001274511A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 導波路型光素子
JP4547765B2 (ja) * 2000-03-30 2010-09-22 三菱電機株式会社 光変調器及び光変調器付半導体レーザ装置、並びに光通信装置
JP4828018B2 (ja) * 2000-11-06 2011-11-30 三菱電機株式会社 光変調器およびその製造方法並びに光半導体装置
WO2002069004A2 (en) 2001-02-22 2002-09-06 Bookham Technology Plc Semiconductor optical waveguide device

Also Published As

Publication number Publication date
EP1730560A1 (fr) 2006-12-13
US7657146B2 (en) 2010-02-02
FR2868171A1 (fr) 2005-09-30
JP2007531031A (ja) 2007-11-01
US20080260320A1 (en) 2008-10-23
EP1730560B1 (fr) 2008-01-16
JP5154921B2 (ja) 2013-02-27
DE602005004392T2 (de) 2009-01-15
WO2005093480A1 (fr) 2005-10-06
DE602005004392D1 (de) 2008-03-06
ATE384282T1 (de) 2008-02-15

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20071130