FR2868171B1 - Modulateur optoelectronique haute frequence integre sur silicium - Google Patents

Modulateur optoelectronique haute frequence integre sur silicium

Info

Publication number
FR2868171B1
FR2868171B1 FR0450608A FR0450608A FR2868171B1 FR 2868171 B1 FR2868171 B1 FR 2868171B1 FR 0450608 A FR0450608 A FR 0450608A FR 0450608 A FR0450608 A FR 0450608A FR 2868171 B1 FR2868171 B1 FR 2868171B1
Authority
FR
France
Prior art keywords
silicon
controller
high frequency
zone
modulator integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0450608A
Other languages
English (en)
French (fr)
Other versions
FR2868171A1 (fr
Inventor
Suzette Laval
Delphine Marris
Eric Cassan
Daniel Pascal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique
Université Paris-Sud
Original Assignee
Centre National de la Recherche Scientifique
Université Paris-Sud
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0450608A priority Critical patent/FR2868171B1/fr
Application filed by Centre National de la Recherche Scientifique, Université Paris-Sud filed Critical Centre National de la Recherche Scientifique
Priority to PCT/FR2005/000748 priority patent/WO2005093480A1/fr
Priority to DE602005004392T priority patent/DE602005004392T2/de
Priority to AT05744257T priority patent/ATE384282T1/de
Priority to JP2007505588A priority patent/JP5154921B2/ja
Priority to US11/547,550 priority patent/US7657146B2/en
Priority to EP05744257A priority patent/EP1730560B1/fr
Publication of FR2868171A1 publication Critical patent/FR2868171A1/fr
Application granted granted Critical
Publication of FR2868171B1 publication Critical patent/FR2868171B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/06—Materials and properties dopant

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
FR0450608A 2004-03-29 2004-03-29 Modulateur optoelectronique haute frequence integre sur silicium Expired - Fee Related FR2868171B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0450608A FR2868171B1 (fr) 2004-03-29 2004-03-29 Modulateur optoelectronique haute frequence integre sur silicium
DE602005004392T DE602005004392T2 (de) 2004-03-29 2005-03-29 Integrierter optoelektronischer hochfrequenzmodulator auf silizium
AT05744257T ATE384282T1 (de) 2004-03-29 2005-03-29 Integrierter optoelektronischer hochfrequenzmodulator auf silizium
JP2007505588A JP5154921B2 (ja) 2004-03-29 2005-03-29 シリコン上に集積された高周波オプトエレクトロニク変調器
PCT/FR2005/000748 WO2005093480A1 (fr) 2004-03-29 2005-03-29 Modulateur optoelectronique haute frequence integre sur silicium
US11/547,550 US7657146B2 (en) 2004-03-29 2005-03-29 Optoelectric high frequency modulator integrated on silicon
EP05744257A EP1730560B1 (fr) 2004-03-29 2005-03-29 Modulateur optoelectronique haute frequence integre sur silicium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0450608A FR2868171B1 (fr) 2004-03-29 2004-03-29 Modulateur optoelectronique haute frequence integre sur silicium

Publications (2)

Publication Number Publication Date
FR2868171A1 FR2868171A1 (fr) 2005-09-30
FR2868171B1 true FR2868171B1 (fr) 2006-09-15

Family

ID=34944281

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0450608A Expired - Fee Related FR2868171B1 (fr) 2004-03-29 2004-03-29 Modulateur optoelectronique haute frequence integre sur silicium

Country Status (7)

Country Link
US (1) US7657146B2 (enExample)
EP (1) EP1730560B1 (enExample)
JP (1) JP5154921B2 (enExample)
AT (1) ATE384282T1 (enExample)
DE (1) DE602005004392T2 (enExample)
FR (1) FR2868171B1 (enExample)
WO (1) WO2005093480A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5265929B2 (ja) * 2008-01-10 2013-08-14 Nttエレクトロニクス株式会社 半導体光変調器及び光変調装置
FR2935845B1 (fr) 2008-09-05 2010-09-10 Centre Nat Rech Scient Cavite optique amplificatrice de type fabry-perot
FR2937427B1 (fr) 2008-10-17 2011-03-04 Commissariat Energie Atomique Procede de fabrication d'un modulateur electro-optique lateral sur silicium a zones implantees auto-alignees
FR2943802B1 (fr) * 2009-03-24 2011-09-30 Univ Paris Sud Modulateur optique a haut debit en semi-conducteur sur isolant
US8548281B2 (en) * 2009-09-08 2013-10-01 Electronics And Telecommunications Research Institute Electro-optic modulating device
KR101453473B1 (ko) 2009-09-08 2014-10-24 한국전자통신연구원 전기-광학 변조 소자
FR2950708B1 (fr) 2009-09-29 2012-03-09 Univ Paris Sud Modulateur optique compact a haut debit en semi-conducteur sur isolant.
JP5577909B2 (ja) * 2010-07-22 2014-08-27 富士通株式会社 光半導体装置及びその製造方法
JP5633224B2 (ja) * 2010-07-22 2014-12-03 富士通株式会社 光半導体装置及びその駆動方法
JP6209843B2 (ja) * 2013-03-29 2017-10-11 住友電気工業株式会社 半導体変調器を作製する方法、半導体変調器
JP6236947B2 (ja) * 2013-07-16 2017-11-29 住友電気工業株式会社 半導体光素子を製造する方法、および半導体光素子
US9766484B2 (en) * 2014-01-24 2017-09-19 Cisco Technology, Inc. Electro-optical modulator using waveguides with overlapping ridges
GB2566781B (en) * 2015-11-12 2020-06-03 Rockley Photonics Ltd An optoelectronic component
WO2018045300A1 (en) * 2016-09-01 2018-03-08 Luxtera, Inc. Method and system for a vertical junction high-speed phase modulator
GB2559252B (en) * 2016-12-02 2020-06-03 Rockley Photonics Ltd Waveguide optoelectronic device
US9798166B1 (en) * 2017-01-24 2017-10-24 Mellanox Technologies Silicon Photonics Inc. Attenuator with improved fabrication consistency
US10739622B2 (en) * 2018-12-28 2020-08-11 Juniper Networks, Inc. Integrated optoelectronic device with heater
CN112201714A (zh) * 2020-09-28 2021-01-08 三明学院 一种探测器及制作工艺
TW202304016A (zh) * 2021-03-17 2023-01-16 美商爾雅實驗室公司 具有掃出式二極體的低非線性損耗矽波導
US12353069B2 (en) * 2021-05-06 2025-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Waveguide having doped pillar structures to improve modulator efficiency

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4974044A (en) * 1989-04-21 1990-11-27 At&T Bell Laboratories Devices having asymmetric delta-doping
US4997246A (en) * 1989-12-21 1991-03-05 International Business Machines Corporation Silicon-based rib waveguide optical modulator
EP1107044A1 (en) * 1999-11-30 2001-06-13 Hitachi Europe Limited Photonic device
JP2001274511A (ja) * 2000-03-28 2001-10-05 Toshiba Corp 導波路型光素子
JP4547765B2 (ja) * 2000-03-30 2010-09-22 三菱電機株式会社 光変調器及び光変調器付半導体レーザ装置、並びに光通信装置
JP4828018B2 (ja) * 2000-11-06 2011-11-30 三菱電機株式会社 光変調器およびその製造方法並びに光半導体装置
WO2002069004A2 (en) 2001-02-22 2002-09-06 Bookham Technology Plc Semiconductor optical waveguide device

Also Published As

Publication number Publication date
US20080260320A1 (en) 2008-10-23
FR2868171A1 (fr) 2005-09-30
DE602005004392D1 (de) 2008-03-06
JP2007531031A (ja) 2007-11-01
EP1730560B1 (fr) 2008-01-16
ATE384282T1 (de) 2008-02-15
JP5154921B2 (ja) 2013-02-27
WO2005093480A1 (fr) 2005-10-06
EP1730560A1 (fr) 2006-12-13
DE602005004392T2 (de) 2009-01-15
US7657146B2 (en) 2010-02-02

Similar Documents

Publication Publication Date Title
FR2868171A1 (fr) Modulateur optoelectronique haute frequence integre sur silicium
US11735574B2 (en) Method and system for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement
US20210311258A1 (en) Photonics grating coupler and method of manufacture
US8737772B2 (en) Reducing optical loss in an optical modulator using depletion region
ATE552633T1 (de) Nitridhalbleiterlaser und seine herstellungsmethode
US20160054596A1 (en) Linear optical phase modulators
WO2003007441A3 (en) Monolithic piezoelectrically-tunable optoelectronic device
ATE346410T1 (de) Siliziumwafer mit monolithischen optoelektronischen komponenten
FR2817395B1 (fr) Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
TWI686962B (zh) 微型發光元件、結構及其顯示裝置
TW200633331A (en) Semiconductor laser device and fabricating method thereof
EP1022822A4 (en) OPTICAL MODULE AND ITS MANUFACTURING METHOD
WO2019166875A8 (en) Electro-absorption modulator
CN110088995B (zh) 光集成元件以及光发送机模块
TW200638645A (en) Semiconductor laser device
US20110194802A1 (en) Mach-zehnder modulator
ATE488038T1 (de) Photonische integrierte bauelemente mit mehreren ebenen
CN108345063A (zh) 光子集成电路
JP2007531031A5 (enExample)
DE602006002459D1 (de) Optoelektronische Vorrichtung mit einem Laser mit integriertem Modulator und Herstellungsverfahren dafür
US7805037B1 (en) Multiplexer having improved efficiency
CN105366629B (zh) 一种对称石墨烯纳米带的加速度传感装置
US11262637B2 (en) Method and system for a frequency diverse distributed Mach-Zehnder Interferometer
US7369714B2 (en) High-speed electronic carrier-injection modulator based on high-index-contrast Si-waveguide
WO2021030235A3 (en) Wafer with regions of low oxygen concentration

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20071130