WO2003007441A3 - Monolithic piezoelectrically-tunable optoelectronic device - Google Patents

Monolithic piezoelectrically-tunable optoelectronic device Download PDF

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Publication number
WO2003007441A3
WO2003007441A3 PCT/US2002/012101 US0212101W WO03007441A3 WO 2003007441 A3 WO2003007441 A3 WO 2003007441A3 US 0212101 W US0212101 W US 0212101W WO 03007441 A3 WO03007441 A3 WO 03007441A3
Authority
WO
WIPO (PCT)
Prior art keywords
piezoelectrically
monolithic
optical device
optoelectronic device
tunable optoelectronic
Prior art date
Application number
PCT/US2002/012101
Other languages
French (fr)
Other versions
WO2003007441A2 (en
Inventor
Kurt Eisenbeiser
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2002252681A priority Critical patent/AU2002252681A1/en
Publication of WO2003007441A2 publication Critical patent/WO2003007441A2/en
Publication of WO2003007441A3 publication Critical patent/WO2003007441A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

The present invention provides a monolithic piezoelectrically-tunable optoelectronic device structure which includes an epitaxial piezoelectric material (206) that is monolithically integrated with an optical device (210), such as a laser structure or a photodetector structure for example. In alternate embodiments, the epitaxial piezoelectric material may be monolithically integrated either above or below the active layer of the optical device or may be positioned adjacent to the optical device. A vertical cavity surface emitting laser diode which monolithically integrates a piezoelectric thin-film exhibits high tunability and improved performance.
PCT/US2002/012101 2001-07-13 2002-04-17 Monolithic piezoelectrically-tunable optoelectronic device WO2003007441A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002252681A AU2002252681A1 (en) 2001-07-13 2002-04-17 Monolithic piezoelectrically-tunable optoelectronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/903,740 US20030012249A1 (en) 2001-07-13 2001-07-13 Monolithic piezoelectrically-tunable optoelectronic device structures and methods for fabricating same
US09/903,740 2001-07-13

Publications (2)

Publication Number Publication Date
WO2003007441A2 WO2003007441A2 (en) 2003-01-23
WO2003007441A3 true WO2003007441A3 (en) 2003-10-09

Family

ID=25418008

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/012101 WO2003007441A2 (en) 2001-07-13 2002-04-17 Monolithic piezoelectrically-tunable optoelectronic device

Country Status (3)

Country Link
US (1) US20030012249A1 (en)
AU (1) AU2002252681A1 (en)
WO (1) WO2003007441A2 (en)

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US6992321B2 (en) * 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US20070297741A1 (en) * 2004-02-11 2007-12-27 Patrick Linder Method for Determining Clinical and/or Chemical Parameters in a Medium and Device for Carrying Out Said Method
WO2005078879A1 (en) * 2004-02-11 2005-08-25 Technomedia Ag Laser diode with external resonator and wavelength which is adjustable by means of external pressure on the laser diode
US20070165400A1 (en) * 2004-02-11 2007-07-19 Patrick Linder Light unit and method for generating light rays
JP2006196631A (en) * 2005-01-13 2006-07-27 Hitachi Ltd Semiconductor device and its manufacturing method
US20070138507A1 (en) * 2005-12-16 2007-06-21 Glass Elizabeth C Method of fabricating reduced subthreshold leakage current submicron NFET's with high III/V ratio material
DE102006039083A1 (en) * 2006-08-17 2008-02-21 Carl Zeiss Microimaging Gmbh Tunable lighting source
US7494911B2 (en) 2006-09-27 2009-02-24 Intel Corporation Buffer layers for device isolation of devices grown on silicon
US7830926B1 (en) * 2006-11-13 2010-11-09 Kim Matthew H Tunable device, method of manufacture, and method of tuning a laser
JP5133927B2 (en) * 2009-03-26 2013-01-30 コバレントマテリアル株式会社 Compound semiconductor substrate
US8810996B2 (en) 2010-11-22 2014-08-19 The Trustees Of The Stevens Institute Of Technology Inkjet-printed flexible electronic components from graphene oxide
US8878120B2 (en) 2010-12-13 2014-11-04 The Trustees Of The Stevens Institute Of Technology Active bandgap tuning of graphene for tunable photodetection applications
US9738526B2 (en) 2012-09-06 2017-08-22 The Trustees Of The Stevens Institute Of Technology Popcorn-like growth of graphene-carbon nanotube multi-stack hybrid three-dimensional architecture for energy storage devices
US9178129B2 (en) 2012-10-15 2015-11-03 The Trustees Of The Stevens Institute Of Technology Graphene-based films in sensor applications
US20140205841A1 (en) 2013-01-18 2014-07-24 Hongwei Qiu Granules of graphene oxide by spray drying
US9573814B2 (en) 2013-02-20 2017-02-21 The Trustees Of The Stevens Institute Of Technology High-throughput graphene printing and selective transfer using a localized laser heating technique
US9437772B2 (en) 2013-03-15 2016-09-06 Matthew H. Kim Method of manufacture of advanced heterojunction transistor and transistor laser
US9666702B2 (en) 2013-03-15 2017-05-30 Matthew H. Kim Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices
JP6299955B2 (en) * 2013-12-20 2018-03-28 セイコーエプソン株式会社 Surface emitting laser and atomic oscillator
JP2015119149A (en) * 2013-12-20 2015-06-25 セイコーエプソン株式会社 Surface-emitting laser and atomic oscillator
JP2015119143A (en) * 2013-12-20 2015-06-25 セイコーエプソン株式会社 Surface-emitting laser and atomic oscillator
US11330984B2 (en) 2015-06-19 2022-05-17 The Trustees Of The Stevens Institute Of Technology Wearable graphene sensors
US20180287027A1 (en) 2017-03-30 2018-10-04 Vuereal Inc. Vertical solid-state devices
US11721784B2 (en) 2017-03-30 2023-08-08 Vuereal Inc. High efficient micro devices
US11600743B2 (en) 2017-03-30 2023-03-07 Vuereal Inc. High efficient microdevices
FR3086800B1 (en) * 2018-09-28 2020-10-02 Commissariat Energie Atomique METHOD OF MANUFACTURING AN OPTOELECTRONIC DEVICE FOR EMISSION OF INFRARED LIGHT INCLUDING AN ACTIVE LAYER BASED ON GESN
US11769988B2 (en) * 2019-10-28 2023-09-26 Mellanox Technologies, Ltd. Vertical-cavity surface-emitting laser (VCSEL) tuned through application of mechanical stress via a piezoelectric material
GB2622363A (en) * 2022-09-12 2024-03-20 Iqe Plc A light emitting device of Ge

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JPS5966183A (en) * 1982-10-07 1984-04-14 Matsushita Electric Ind Co Ltd Frequency variable semiconductor laser
JPS60212018A (en) * 1984-04-04 1985-10-24 Nec Corp Surface acoustic wave substrate and its manufacture
JPH0346384A (en) * 1989-07-14 1991-02-27 Nec Corp Plane-type variable wavelength light emitting element
US5248564A (en) * 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5313058A (en) * 1990-11-09 1994-05-17 Thomson-Csf Semiconductor optoelectronic detector
US5576879A (en) * 1994-01-14 1996-11-19 Fuji Xerox Co., Ltd. Composite optical modulator
US5656382A (en) * 1993-11-04 1997-08-12 Fuji Xerox Co., Ltd. Oriented conductive film and process for preparing the same

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JPS5966183A (en) * 1982-10-07 1984-04-14 Matsushita Electric Ind Co Ltd Frequency variable semiconductor laser
JPS60212018A (en) * 1984-04-04 1985-10-24 Nec Corp Surface acoustic wave substrate and its manufacture
JPH0346384A (en) * 1989-07-14 1991-02-27 Nec Corp Plane-type variable wavelength light emitting element
US5313058A (en) * 1990-11-09 1994-05-17 Thomson-Csf Semiconductor optoelectronic detector
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5248564A (en) * 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
US5656382A (en) * 1993-11-04 1997-08-12 Fuji Xerox Co., Ltd. Oriented conductive film and process for preparing the same
US5576879A (en) * 1994-01-14 1996-11-19 Fuji Xerox Co., Ltd. Composite optical modulator

Non-Patent Citations (6)

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Also Published As

Publication number Publication date
AU2002252681A1 (en) 2003-01-29
US20030012249A1 (en) 2003-01-16
WO2003007441A2 (en) 2003-01-23

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