FR2950708B1 - Modulateur optique compact a haut debit en semi-conducteur sur isolant. - Google Patents

Modulateur optique compact a haut debit en semi-conducteur sur isolant.

Info

Publication number
FR2950708B1
FR2950708B1 FR0956770A FR0956770A FR2950708B1 FR 2950708 B1 FR2950708 B1 FR 2950708B1 FR 0956770 A FR0956770 A FR 0956770A FR 0956770 A FR0956770 A FR 0956770A FR 2950708 B1 FR2950708 B1 FR 2950708B1
Authority
FR
France
Prior art keywords
insulation
semiconductor
optical modulator
high flow
compact optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0956770A
Other languages
English (en)
Other versions
FR2950708A1 (fr
Inventor
Gilles Rasigade
Laurent Vivien
Delphine Marris-Morini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite Paris Saclay
Original Assignee
Universite Paris Sud Paris 11
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universite Paris Sud Paris 11 filed Critical Universite Paris Sud Paris 11
Priority to FR0956770A priority Critical patent/FR2950708B1/fr
Priority to EP10777046A priority patent/EP2483739A1/fr
Priority to JP2012531480A priority patent/JP5711749B2/ja
Priority to PCT/FR2010/052056 priority patent/WO2011039478A1/fr
Priority to US13/498,486 priority patent/US8761549B2/en
Publication of FR2950708A1 publication Critical patent/FR2950708A1/fr
Application granted granted Critical
Publication of FR2950708B1 publication Critical patent/FR2950708B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G02F1/0356—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure controlled by a high-frequency electromagnetic wave component in an electric waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/127—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode travelling wave
FR0956770A 2009-09-29 2009-09-29 Modulateur optique compact a haut debit en semi-conducteur sur isolant. Expired - Fee Related FR2950708B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0956770A FR2950708B1 (fr) 2009-09-29 2009-09-29 Modulateur optique compact a haut debit en semi-conducteur sur isolant.
EP10777046A EP2483739A1 (fr) 2009-09-29 2010-09-29 Modulateur optique compact à haut débit en semi-conducteur sur isolant
JP2012531480A JP5711749B2 (ja) 2009-09-29 2010-09-29 絶縁体上半導体の高速でコンパクトな光変調器
PCT/FR2010/052056 WO2011039478A1 (fr) 2009-09-29 2010-09-29 Modulateur optique compact a haut debit en semi-conducteur sur isolant
US13/498,486 US8761549B2 (en) 2009-09-29 2010-09-29 Semiconductor on insulant high-rate compact optical modulator having a winding waveguide structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0956770A FR2950708B1 (fr) 2009-09-29 2009-09-29 Modulateur optique compact a haut debit en semi-conducteur sur isolant.

Publications (2)

Publication Number Publication Date
FR2950708A1 FR2950708A1 (fr) 2011-04-01
FR2950708B1 true FR2950708B1 (fr) 2012-03-09

Family

ID=42138981

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0956770A Expired - Fee Related FR2950708B1 (fr) 2009-09-29 2009-09-29 Modulateur optique compact a haut debit en semi-conducteur sur isolant.

Country Status (5)

Country Link
US (1) US8761549B2 (fr)
EP (1) EP2483739A1 (fr)
JP (1) JP5711749B2 (fr)
FR (1) FR2950708B1 (fr)
WO (1) WO2011039478A1 (fr)

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JP5631917B2 (ja) * 2012-03-29 2014-11-26 株式会社東芝 光送受信システムおよび光受光ユニット
WO2014121144A1 (fr) * 2013-02-01 2014-08-07 The Board Of Trustees Of The Leland Stanford Junior University Guides d'ondes couplés pour applications de capteur de lumière lente
WO2015155900A1 (fr) * 2014-04-07 2015-10-15 Fujikura Ltd. Dispositif de guide d'ondes optique et son procédé de fabrication
CN108292053B (zh) * 2015-11-17 2022-03-15 韩国高等科学技术学院 具有适用于光相位排列天线的可调制光栅结构的纳米光学辐射器
KR101882062B1 (ko) * 2015-11-17 2018-07-25 한국과학기술원 광 위상 배열 안테나에 적용을 위한 변조 가능한 격자 구조를 갖는 나노포토닉 발산기
KR101836613B1 (ko) * 2016-04-08 2018-03-09 한국과학기술원 광파가 공간으로 방사되는 방사각을 조절하는 광 발산기
FR3069069A1 (fr) * 2017-07-11 2019-01-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Modulateur de phase optique a jonction pn sinusoidale
US20190162987A1 (en) * 2017-11-30 2019-05-30 Rain Tree Photonics Pte. Ltd. Phase-shifter for optical modulation
CN114265150B (zh) * 2021-12-16 2022-09-06 浙江大学 一种支持片上远距离低损耗传输的紧凑线圈光波导
WO2024048747A1 (fr) * 2022-08-31 2024-03-07 日本電信電話株式会社 Filtre en treillis de type circuit d'onde de lumière plan et module de transmission optique l'utilisant

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FR2694630B1 (fr) * 1992-08-10 1994-09-09 Commissariat Energie Atomique Capteur en optique intégrée, notamment pour substances chimiques.
US5398256A (en) * 1993-05-10 1995-03-14 The United States Of America As Represented By The United States Department Of Energy Interferometric ring lasers and optical devices
FR2706631B1 (fr) * 1993-06-17 1997-12-12 Oki Electric Ind Co Ltd Module de commutation optique compact.
JPH0961760A (ja) * 1995-08-29 1997-03-07 Nippon Telegr & Teleph Corp <Ntt> 光導波路のポーリング方法
US5701372A (en) * 1996-10-22 1997-12-23 Texas Instruments Incorporated Hybrid architecture for integrated optic switchable time delay lines and method of fabricating same
US5953468A (en) * 1996-11-01 1999-09-14 Mendez R&D Associates Scalable, quantized, delay-line array based on nested, generalized spirals
US5926589A (en) * 1997-07-07 1999-07-20 Hughes Electronics Corporation High-speed integrated-optics switchable delay-line using trombone sections
US6593589B1 (en) 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
US6843590B2 (en) * 2000-05-17 2005-01-18 Quantum Vision, Inc. Waveguide based light source
WO2002025320A2 (fr) * 2000-09-19 2002-03-28 David Nir Dispositif de commutation optique intégré
FR2822304A1 (fr) * 2001-03-16 2002-09-20 Teem Photonics Structure d'amplification optique realisee en optique integree et boitier d'amplification integrant une telle structure
US6650818B2 (en) * 2001-06-08 2003-11-18 Photon-X, Inc. Rare earth doped optical waveguide and laser with optimal bending curves
US6731828B2 (en) * 2001-07-04 2004-05-04 Nippon Telegraph And Telephone Corporation Waveguide-type optical signal processing circuit
JP2003131051A (ja) * 2001-08-16 2003-05-08 Nec Corp 光デバイス
EP1291642A1 (fr) * 2001-09-05 2003-03-12 Linde Medical Sensors AG Système de capteur pour la détection de substances chimiques comprenant un guide intégré d'ondes lumineuses
US6882757B2 (en) * 2002-12-23 2005-04-19 Agilent Technologies, Inc. Velocity matched waveguide for traveling-wave optical modulators
GB0317530D0 (en) * 2003-07-26 2003-08-27 Qinetiq Ltd Optical circuit for a fibre amplifier
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FR2868171B1 (fr) 2004-03-29 2006-09-15 Univ Paris Sud Modulateur optoelectronique haute frequence integre sur silicium
WO2005103782A1 (fr) * 2004-04-27 2005-11-03 Thales International Asia Holding Pte Ltd Circuit de ligne de retard optique, notamment pour la generation de retard de temps reel d'antennes hyperfrequence en reseau
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JPWO2007058366A1 (ja) * 2005-11-16 2009-05-07 日本碍子株式会社 光導波路デバイス
US7817881B2 (en) * 2006-06-01 2010-10-19 Bing Li Circuit architecture for electro-optic modulation based on free carrier dispersion effect and the waveguide capacitor structures for such modulator circuitry using CMOS or Bi-CMOS process
JP5117082B2 (ja) * 2007-03-08 2013-01-09 アンリツ株式会社 光変調器
JP5113102B2 (ja) * 2008-02-01 2013-01-09 アンリツ株式会社 光変調デバイス

Also Published As

Publication number Publication date
FR2950708A1 (fr) 2011-04-01
US8761549B2 (en) 2014-06-24
JP5711749B2 (ja) 2015-05-07
US20120183251A1 (en) 2012-07-19
WO2011039478A1 (fr) 2011-04-07
JP2013506167A (ja) 2013-02-21
EP2483739A1 (fr) 2012-08-08

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