JP2004186678A5 - - Google Patents

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Publication number
JP2004186678A5
JP2004186678A5 JP2003376144A JP2003376144A JP2004186678A5 JP 2004186678 A5 JP2004186678 A5 JP 2004186678A5 JP 2003376144 A JP2003376144 A JP 2003376144A JP 2003376144 A JP2003376144 A JP 2003376144A JP 2004186678 A5 JP2004186678 A5 JP 2004186678A5
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JP
Japan
Prior art keywords
electrode
nitride semiconductor
semiconductor light
emitting device
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003376144A
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English (en)
Japanese (ja)
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JP2004186678A (ja
JP4526260B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2003376144A priority Critical patent/JP4526260B2/ja
Priority claimed from JP2003376144A external-priority patent/JP4526260B2/ja
Publication of JP2004186678A publication Critical patent/JP2004186678A/ja
Publication of JP2004186678A5 publication Critical patent/JP2004186678A5/ja
Application granted granted Critical
Publication of JP4526260B2 publication Critical patent/JP4526260B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003376144A 2002-11-20 2003-11-05 窒化物半導体発光素子 Expired - Fee Related JP4526260B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003376144A JP4526260B2 (ja) 2002-11-20 2003-11-05 窒化物半導体発光素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002336660 2002-11-20
JP2003376144A JP4526260B2 (ja) 2002-11-20 2003-11-05 窒化物半導体発光素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010040469A Division JP2010118702A (ja) 2002-11-20 2010-02-25 窒化物半導体発光素子

Publications (3)

Publication Number Publication Date
JP2004186678A JP2004186678A (ja) 2004-07-02
JP2004186678A5 true JP2004186678A5 (enExample) 2006-03-30
JP4526260B2 JP4526260B2 (ja) 2010-08-18

Family

ID=32774640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003376144A Expired - Fee Related JP4526260B2 (ja) 2002-11-20 2003-11-05 窒化物半導体発光素子

Country Status (1)

Country Link
JP (1) JP4526260B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7187813B2 (en) * 2005-01-20 2007-03-06 Intel Corporation Optical transistor
JP2010027935A (ja) 2008-07-23 2010-02-04 Sony Corp 半導体レーザ、光ディスク装置および光ピックアップ
JP2010251712A (ja) * 2009-03-26 2010-11-04 Sony Corp バイ・セクション型半導体レーザ素子及びその製造方法、並びに、バイ・セクション型半導体レーザ素子の駆動方法
JP2011023406A (ja) * 2009-07-13 2011-02-03 Sharp Corp 窒化物半導体レーザ素子
JP2011029381A (ja) * 2009-07-24 2011-02-10 Sharp Corp 半導体レーザ素子
JP2011044648A (ja) * 2009-08-24 2011-03-03 Sharp Corp 窒化物半導体レーザ素子およびその製造方法
JP2011054834A (ja) * 2009-09-03 2011-03-17 Sharp Corp 窒化物半導体レーザ素子
JP2011187579A (ja) * 2010-03-05 2011-09-22 Sony Corp モードロック半導体レーザ素子及びその駆動方法
JP2011187580A (ja) 2010-03-05 2011-09-22 Sony Corp 自励発振型半導体レーザ素子及びその駆動方法
JP5633289B2 (ja) * 2010-10-04 2014-12-03 日亜化学工業株式会社 半導体レーザ素子の駆動方法及び半導体レーザ装置
JP5536132B2 (ja) * 2012-04-04 2014-07-02 ソニー株式会社 半導体レーザ素子
JP2014007434A (ja) * 2013-10-18 2014-01-16 Sony Corp モードロック半導体レーザ素子及び半導体レーザ装置組立体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6239087A (ja) * 1985-08-14 1987-02-20 Nec Corp 半導体レ−ザ
JP2516953B2 (ja) * 1987-02-17 1996-07-24 松下電器産業株式会社 半導体レ―ザ装置の製造方法
JPH01251775A (ja) * 1988-03-31 1989-10-06 Nec Corp 半導体レーザ装置及びその駆動方法
JP2877063B2 (ja) * 1995-11-06 1999-03-31 松下電器産業株式会社 半導体発光素子
JP4245691B2 (ja) * 1998-08-04 2009-03-25 シャープ株式会社 窒化ガリウム系半導体レーザ素子及び光ピックアップ装置

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