CN101257186B - 氮化物半导体激光器元件 - Google Patents
氮化物半导体激光器元件 Download PDFInfo
- Publication number
- CN101257186B CN101257186B CN2008100808963A CN200810080896A CN101257186B CN 101257186 B CN101257186 B CN 101257186B CN 2008100808963 A CN2008100808963 A CN 2008100808963A CN 200810080896 A CN200810080896 A CN 200810080896A CN 101257186 B CN101257186 B CN 101257186B
- Authority
- CN
- China
- Prior art keywords
- diaphragm
- nitride semiconductor
- semiconductor laser
- face
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 187
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 163
- 239000012528 membrane Substances 0.000 claims description 90
- 230000003287 optical effect Effects 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 24
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 172
- 239000010410 layer Substances 0.000 description 153
- 238000000034 method Methods 0.000 description 62
- 230000015572 biosynthetic process Effects 0.000 description 29
- 239000000758 substrate Substances 0.000 description 20
- 238000010276 construction Methods 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- 229910052681 coesite Inorganic materials 0.000 description 15
- 229910052906 cristobalite Inorganic materials 0.000 description 15
- 239000000377 silicon dioxide Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052682 stishovite Inorganic materials 0.000 description 15
- 229910052905 tridymite Inorganic materials 0.000 description 15
- 229910002601 GaN Inorganic materials 0.000 description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 10
- 229910052593 corundum Inorganic materials 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 229910001845 yogo sapphire Inorganic materials 0.000 description 10
- 208000037656 Respiratory Sounds Diseases 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000002294 plasma sputter deposition Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000011253 protective coating Substances 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000001802 infusion Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052699 polonium Inorganic materials 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- -1 AlN Chemical class 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010011376 Crepitations Diseases 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000001309 chloro group Chemical class Cl* 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Landscapes
- Semiconductor Lasers (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007046260A JP5670009B2 (ja) | 2007-02-26 | 2007-02-26 | 窒化物半導体レーザ素子 |
| JP2007-046260 | 2007-02-26 | ||
| JP2007046260 | 2007-02-26 | ||
| JP2007048426A JP5681338B2 (ja) | 2007-02-28 | 2007-02-28 | 窒化物半導体レーザ素子 |
| JP2007-048426 | 2007-02-28 | ||
| JP2007048426 | 2007-02-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101257186A CN101257186A (zh) | 2008-09-03 |
| CN101257186B true CN101257186B (zh) | 2012-06-20 |
Family
ID=39787044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100808963A Active CN101257186B (zh) | 2007-02-26 | 2008-02-26 | 氮化物半导体激光器元件 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5670009B2 (enExample) |
| CN (1) | CN101257186B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5572919B2 (ja) * | 2007-06-07 | 2014-08-20 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| DE102012102305B4 (de) * | 2012-03-19 | 2025-07-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserdiodenvorrichtung |
| WO2019159449A1 (ja) | 2018-02-14 | 2019-08-22 | パナソニックＩｐマネジメント株式会社 | 窒化物半導体レーザ素子及び照明光源モジュール |
| US10418781B1 (en) * | 2018-07-06 | 2019-09-17 | Ii-Vi Delaware, Inc. | Quantum well passivation structure for laser facets |
| CN114453740B (zh) * | 2022-02-25 | 2023-10-17 | 中国人民解放军国防科技大学 | 一种基于激光熔接的石英谐振子的装配装置及方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5430750A (en) * | 1992-09-28 | 1995-07-04 | Sony Corporation | Method and device for semiconductor laser with controlled thickness of protective and optical films |
| EP1406360A1 (en) * | 2001-05-31 | 2004-04-07 | Nichia Corporation | Semiconductor laser element |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62254480A (ja) * | 1986-04-28 | 1987-11-06 | Hitachi Ltd | 半導体レ−ザ装置 |
| JP2742100B2 (ja) * | 1989-08-18 | 1998-04-22 | 株式会社リコー | マスク半導体レーザ |
| JP4529372B2 (ja) * | 2003-04-23 | 2010-08-25 | 日亜化学工業株式会社 | 半導体レーザ素子 |
| JP4451371B2 (ja) * | 2004-12-20 | 2010-04-14 | シャープ株式会社 | 窒化物半導体レーザ素子 |
| JP5285835B2 (ja) * | 2005-07-13 | 2013-09-11 | 株式会社東芝 | 半導体素子およびその製造方法 |
-
2007
- 2007-02-26 JP JP2007046260A patent/JP5670009B2/ja active Active
-
2008
- 2008-02-26 CN CN2008100808963A patent/CN101257186B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5430750A (en) * | 1992-09-28 | 1995-07-04 | Sony Corporation | Method and device for semiconductor laser with controlled thickness of protective and optical films |
| EP1406360A1 (en) * | 2001-05-31 | 2004-04-07 | Nichia Corporation | Semiconductor laser element |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101257186A (zh) | 2008-09-03 |
| JP5670009B2 (ja) | 2015-02-18 |
| JP2008210992A (ja) | 2008-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7646798B2 (en) | Nitride semiconductor laser element | |
| JP5273081B2 (ja) | 半導体発光素子 | |
| US20100096615A1 (en) | Light-emitting device | |
| JP5286723B2 (ja) | 窒化物半導体レーザ素子 | |
| US8053262B2 (en) | Method for manufacturing nitride semiconductor laser element | |
| US7668218B2 (en) | Nitride semiconductor laser element | |
| US8415188B2 (en) | Method for manufacturing nitride semiconductor laser element | |
| JP2008227002A (ja) | 窒化物半導体レーザ素子 | |
| EP2224558A1 (en) | Semiconductor laser element | |
| KR101545347B1 (ko) | 질화물 반도체 레이저 소자 | |
| KR101361387B1 (ko) | 질화물 반도체 레이저 소자 | |
| CN101257186B (zh) | 氮化物半导体激光器元件 | |
| JP5391588B2 (ja) | 窒化物半導体レーザ素子 | |
| JP5735216B2 (ja) | 窒化物半導体レーザ素子 | |
| EP2086076B1 (en) | Nitride semiconductor laser element | |
| JP5640398B2 (ja) | 窒化物半導体素子及びその製造方法 | |
| JP2008218523A (ja) | 窒化物半導体レーザ素子及びその製造方法 | |
| JP2008205171A (ja) | 窒化物半導体レーザ素子 | |
| JP5572919B2 (ja) | 窒化物半導体レーザ素子 | |
| JP5223342B2 (ja) | 窒化物半導体レーザ素子及びその製造方法 | |
| JP5681338B2 (ja) | 窒化物半導体レーザ素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |