JP4592650B2 - 改善した側壁反射構造を有する側面型発光ダイオード - Google Patents
改善した側壁反射構造を有する側面型発光ダイオード Download PDFInfo
- Publication number
- JP4592650B2 JP4592650B2 JP2006184094A JP2006184094A JP4592650B2 JP 4592650 B2 JP4592650 B2 JP 4592650B2 JP 2006184094 A JP2006184094 A JP 2006184094A JP 2006184094 A JP2006184094 A JP 2006184094A JP 4592650 B2 JP4592650 B2 JP 4592650B2
- Authority
- JP
- Japan
- Prior art keywords
- type led
- led
- lead frame
- led according
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000011347 resin Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 18
- 230000001681 protective effect Effects 0.000 claims description 15
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 10
- 229910004541 SiN Inorganic materials 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims 13
- 239000011241 protective layer Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 15
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
102 LEDチップ
104 ワイヤ
106 ソルダー
110 パッケージ本体
112 凹部
114 側壁
120 リードフレーム
122 リードフレーム
124 絶縁層
126 反射層
128 中間膜
130 保護膜
140 透明封止部
200 側面型LED
202 LEDチップ
204 ワイヤ
206 ソルダー
210 パッケージ本体
212 凹部
214 側壁
216 内面
220 リードフレーム
222 リードフレーム
224 絶縁層
226 反射層
228 中間膜
230 保護膜
240 透明封止部
Claims (11)
- 側傍に光を放出するように側面にLED窓が設けられた側面型LEDにおいて、
端子となる一対のリードフレームと、
前記リードフレームの一面に付着して前記リードフレームと電気的に連結されたLEDチップと、
前記リードフレームを封止しながら前記LEDチップの周りに前記LED窓となる凹部が形成された、樹脂製のパッケージ本体と、
前記凹部の壁面に沿って連続して一体で形成された高反射率の金属層と、
前記高反射率の金属層と前記壁面との間に介在された、SiO 2 、SiN、およびAl 2 O 3 の少なくとも一種から成る絶縁体の中間層と、
前記高反射率の金属層上に形成された、絶縁体の保護膜と、
前記LEDチップを封止するように前記凹部に満たされて前記LED窓を形成する、樹脂製の透明封止部と、
前記リードフレームを前記高反射率の金属層から絶縁させるように前記リードフレームの一面の予め決められた領域に形成された絶縁層と、
を含む側面型LED。 - 前記絶縁層は、前記リードフレームと前記金属層との間の連結領域に形成される請求項1に記載の側面型LED。
- 前記絶縁層は、SiO2、SiN、およびAl2O3の少なくとも一種から成る請求項1または2に記載の側面型LED。
- 前記絶縁層は、蒸着物である請求項3に記載の側面型LED。
- 前記高反射率の金属層は、Ag、Al、Au、Cu、Pd、Pt、Rd、およびこれらの合金の少なくとも一種から成る請求項1から4のいずれかに記載の側面型LED。
- 前記高反射率の金属層は、蒸着物である請求項5に記載の側面型LED。
- 前記中間層は、蒸着物である請求項1に記載の側面型LED。
- 前記保護膜は、透明な絶縁体であることを特徴とする請求項1に記載の側面型LED。
- 前記保護膜は、SiO2、SiN、およびAl2O3の少なくとも一種から成ることを特徴とする請求項8に記載の側面型LED。
- 前記保護膜は、蒸着物であることを特徴とする請求項8または9に記載の側面型LED。
- 前記パッケージ本体は、透明樹脂から成ることを特徴とする請求項1から10のいずれかに記載の側面型LED。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050059590A KR100665216B1 (ko) | 2005-07-04 | 2005-07-04 | 개선된 측벽 반사 구조를 갖는 측면형 발광다이오드 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007019505A JP2007019505A (ja) | 2007-01-25 |
JP4592650B2 true JP4592650B2 (ja) | 2010-12-01 |
Family
ID=37588397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006184094A Expired - Fee Related JP4592650B2 (ja) | 2005-07-04 | 2006-07-04 | 改善した側壁反射構造を有する側面型発光ダイオード |
Country Status (4)
Country | Link |
---|---|
US (2) | US7687815B2 (ja) |
JP (1) | JP4592650B2 (ja) |
KR (1) | KR100665216B1 (ja) |
CN (1) | CN100433390C (ja) |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108333A (ja) * | 2004-10-04 | 2006-04-20 | Toyoda Gosei Co Ltd | ランプ |
TWI331815B (en) * | 2006-03-17 | 2010-10-11 | Seoul Semiconductor Co Ltd | Side-view light emitting diode package having a reflector |
JP2008016565A (ja) * | 2006-07-04 | 2008-01-24 | Shinko Electric Ind Co Ltd | 発光素子収容体及びその製造方法、及び発光装置 |
US7910938B2 (en) * | 2006-09-01 | 2011-03-22 | Cree, Inc. | Encapsulant profile for light emitting diodes |
JP4846498B2 (ja) * | 2006-09-22 | 2011-12-28 | 株式会社東芝 | 光半導体装置及び光半導体装置の製造方法 |
WO2008073400A1 (en) | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Transparent light emitting diodes |
TWI329934B (en) * | 2007-01-17 | 2010-09-01 | Chi Mei Lighting Tech Corp | Lead frame structure of light emitting diode |
KR101352921B1 (ko) * | 2007-05-25 | 2014-01-24 | 삼성디스플레이 주식회사 | 광원모듈, 이를 갖는 백라이트 어셈블리 및 이를 갖는표시장치 |
JP5773646B2 (ja) | 2007-06-25 | 2015-09-02 | キユーデイー・ビジヨン・インコーポレーテツド | ナノ材料を被着させることを含む組成物および方法 |
JP5022795B2 (ja) * | 2007-07-09 | 2012-09-12 | 株式会社東芝 | 半導体受光素子およびその製造方法 |
US20090026470A1 (en) * | 2007-07-23 | 2009-01-29 | Novalite Optronics Corp. | Super thin side-view light-emitting diode (led) package and fabrication method thereof |
KR100928635B1 (ko) * | 2007-08-30 | 2009-11-27 | 주식회사 루멘스 | 측면 발광 다이오드 패키지 |
US8283686B2 (en) | 2007-12-11 | 2012-10-09 | Koninklijke Philips Electronics N.V. | Side emitting device with hybrid top reflector |
JP5647001B2 (ja) | 2007-12-11 | 2014-12-24 | コーニンクレッカ フィリップス エヌ ヴェ | ハイブリッド上部反射器を備える側面放射装置 |
JP5426091B2 (ja) | 2007-12-27 | 2014-02-26 | 豊田合成株式会社 | 発光装置 |
KR100969144B1 (ko) * | 2008-01-28 | 2010-07-08 | 알티전자 주식회사 | 발광 다이오드 패키지 |
CN101499506B (zh) * | 2008-01-30 | 2012-06-13 | 旭丽电子(广州)有限公司 | 发光二极管元件 |
EP2247978A4 (en) | 2008-01-30 | 2012-12-26 | Qualcomm Mems Technologies Inc | THIN LIGHTING SYSTEM |
US8721149B2 (en) | 2008-01-30 | 2014-05-13 | Qualcomm Mems Technologies, Inc. | Illumination device having a tapered light guide |
KR20090100117A (ko) * | 2008-03-19 | 2009-09-23 | 삼성전자주식회사 | 백라이트 유닛과 이를 포함하는 액정 표시 장치 |
US20100051089A1 (en) * | 2008-09-02 | 2010-03-04 | Qualcomm Mems Technologies, Inc. | Light collection device with prismatic light turning features |
US8358266B2 (en) | 2008-09-02 | 2013-01-22 | Qualcomm Mems Technologies, Inc. | Light turning device with prismatic light turning features |
WO2010042219A2 (en) * | 2008-10-10 | 2010-04-15 | Digital Optics International, Llc | Distributed lighting control system |
KR101542915B1 (ko) * | 2008-10-10 | 2015-08-07 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 분산 조명 시스템 |
TW201020643A (en) * | 2008-11-25 | 2010-06-01 | Chi Mei Lighting Tech Corp | Side view type light-emitting diode package structure, and manufacturing method and application thereof |
WO2010067701A1 (ja) * | 2008-12-12 | 2010-06-17 | 三洋電機株式会社 | 発光装置、発光装置モジュールおよび発光装置の製造方法 |
JP2010153861A (ja) * | 2008-12-15 | 2010-07-08 | Yiguang Electronic Ind Co Ltd | 発光ダイオードパッケージ構造 |
KR20110104090A (ko) | 2009-01-13 | 2011-09-21 | 퀄컴 엠이엠스 테크놀로지스, 인크. | 대면적 광 패널 및 스크린 |
CN101800275B (zh) * | 2009-02-11 | 2012-09-05 | 奇力光电科技股份有限公司 | 侧视型发光二极管封装结构及其制造方法与应用 |
US9121979B2 (en) * | 2009-05-29 | 2015-09-01 | Qualcomm Mems Technologies, Inc. | Illumination devices and methods of fabrication thereof |
KR100986571B1 (ko) * | 2010-02-04 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
DE102010023955A1 (de) * | 2010-06-16 | 2011-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
US8402647B2 (en) | 2010-08-25 | 2013-03-26 | Qualcomm Mems Technologies Inc. | Methods of manufacturing illumination systems |
CN102479909B (zh) * | 2010-11-24 | 2014-12-10 | 展晶科技(深圳)有限公司 | 发光二极管 |
CN102479906A (zh) * | 2010-11-24 | 2012-05-30 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
CN103384794B (zh) * | 2010-12-23 | 2018-05-29 | 三星电子株式会社 | 包含量子点的光学元件 |
JP2012142410A (ja) * | 2010-12-28 | 2012-07-26 | Rohm Co Ltd | 発光素子ユニットおよびその製造方法、発光素子パッケージならびに照明装置 |
CN102593307A (zh) * | 2011-01-07 | 2012-07-18 | 钰桥半导体股份有限公司 | 发光二极管光学反射结构 |
TWI462348B (zh) * | 2011-01-27 | 2014-11-21 | 矽品精密工業股份有限公司 | 發光裝置及其製法 |
JP4904604B1 (ja) * | 2011-02-17 | 2012-03-28 | 国立大学法人九州工業大学 | Ledモジュール装置及びその製造方法 |
TWI517452B (zh) * | 2011-03-02 | 2016-01-11 | 建準電機工業股份有限公司 | 發光晶體之多晶封裝結構 |
TWI451605B (zh) | 2011-03-08 | 2014-09-01 | Lextar Electronics Corp | 具有金屬反射面與散熱塊之發光二極體結構 |
KR20120108437A (ko) * | 2011-03-24 | 2012-10-05 | 삼성전자주식회사 | 발광소자 패키지 |
CN202094168U (zh) * | 2011-05-03 | 2011-12-28 | 深圳市华星光电技术有限公司 | Led封装结构 |
KR101830717B1 (ko) * | 2011-06-30 | 2018-02-21 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US8992045B2 (en) * | 2011-07-22 | 2015-03-31 | Guardian Industries Corp. | LED lighting systems and/or methods of making the same |
KR101824011B1 (ko) * | 2011-07-29 | 2018-01-31 | 엘지이노텍 주식회사 | 발광소자 패키지 |
KR20130022052A (ko) * | 2011-08-24 | 2013-03-06 | 엘지이노텍 주식회사 | 발광소자 패키지 및 조명 장치 |
CN102544318B (zh) * | 2012-01-04 | 2015-06-03 | 歌尔声学股份有限公司 | 发光二极管装置 |
KR20130118552A (ko) * | 2012-04-20 | 2013-10-30 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 발광 장치 |
CN103682059B (zh) * | 2012-09-05 | 2016-08-17 | 长华电材股份有限公司 | 发光二极管封装的前制程方法及其结构 |
CN103794698B (zh) * | 2012-10-31 | 2016-12-21 | 展晶科技(深圳)有限公司 | 发光二极管 |
JP2013030812A (ja) * | 2012-11-06 | 2013-02-07 | Mitsubishi Chemicals Corp | Ledチップ固定用基板およびその製造方法 |
KR102099814B1 (ko) * | 2013-01-25 | 2020-04-13 | 루미리즈 홀딩 비.브이. | 조명 조립체 및 조명 조립체를 제조하기 위한 방법 |
US20140208689A1 (en) | 2013-01-25 | 2014-07-31 | Renee Joyal | Hypodermic syringe assist apparatus and method |
US9673364B2 (en) | 2013-07-19 | 2017-06-06 | Nichia Corporation | Light emitting device and method of manufacturing the same |
KR102123039B1 (ko) | 2013-07-19 | 2020-06-15 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 및 그 제조 방법 |
JP6175952B2 (ja) * | 2013-07-19 | 2017-08-09 | 日亜化学工業株式会社 | 発光装置 |
DE102013219063A1 (de) * | 2013-09-23 | 2015-03-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
CN104716245A (zh) * | 2013-12-13 | 2015-06-17 | 晶元光电股份有限公司 | 发光装置及其制作方法 |
EP3276257A1 (en) | 2013-12-17 | 2018-01-31 | Koninklijke Philips N.V. | Low and high beam led lamp |
US9630333B2 (en) * | 2014-03-31 | 2017-04-25 | Sphynx Collection, Llc | Travel razor |
JP6671117B2 (ja) * | 2014-07-08 | 2020-03-25 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
DE102014112818A1 (de) * | 2014-09-05 | 2016-03-10 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
KR102606852B1 (ko) | 2015-01-19 | 2023-11-29 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
DE102015102785A1 (de) * | 2015-02-26 | 2016-09-01 | Osram Opto Semiconductors Gmbh | Optoelektronische Leuchtvorrichtung |
KR102237155B1 (ko) | 2015-03-11 | 2021-04-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 라이트 유닛 |
JP6638282B2 (ja) * | 2015-09-25 | 2020-01-29 | 三菱マテリアル株式会社 | 冷却器付き発光モジュールおよび冷却器付き発光モジュールの製造方法 |
EP3166146B1 (en) * | 2015-11-06 | 2019-04-17 | ams AG | Optical package and method of producing an optical package |
JP6361645B2 (ja) | 2015-12-22 | 2018-07-25 | 日亜化学工業株式会社 | 発光装置 |
CN106129226A (zh) * | 2016-08-31 | 2016-11-16 | 苏州市悠文电子有限公司 | 侧发发光二极管 |
JP7140956B2 (ja) * | 2017-10-25 | 2022-09-22 | 日亜化学工業株式会社 | 発光装置、パッケージ及びそれらの製造方法 |
US11333320B2 (en) | 2018-10-22 | 2022-05-17 | American Sterilizer Company | Retroreflector LED spectrum enhancement method and apparatus |
WO2020118702A1 (zh) * | 2018-12-14 | 2020-06-18 | 泉州三安半导体科技有限公司 | 发光二极管封装体 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10215001A (ja) * | 1997-01-31 | 1998-08-11 | Nichia Chem Ind Ltd | 発光装置 |
JPH11500584A (ja) * | 1996-09-20 | 1999-01-12 | シーメンス アクチエンゲゼルシヤフト | 波長変換する注型材料、その使用方法及びその製造方法 |
JP2002190619A (ja) * | 2000-12-22 | 2002-07-05 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP2003273405A (ja) * | 2002-03-19 | 2003-09-26 | Kyocera Corp | 発光素子収納用パッケージ |
JP2005109289A (ja) * | 2003-10-01 | 2005-04-21 | Nichia Chem Ind Ltd | 発光装置 |
JP2005159311A (ja) * | 2003-10-30 | 2005-06-16 | Nichia Chem Ind Ltd | 半導体素子用の支持体及びその製造方法並びに半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000277813A (ja) | 1999-03-26 | 2000-10-06 | Matsushita Electric Works Ltd | 光源装置 |
JP2002043632A (ja) * | 2000-07-21 | 2002-02-08 | Citizen Electronics Co Ltd | 発光ダイオード |
US6614103B1 (en) * | 2000-09-01 | 2003-09-02 | General Electric Company | Plastic packaging of LED arrays |
KR100541997B1 (ko) * | 2001-03-02 | 2006-01-11 | 이노베이티브 솔루션즈 앤드 서포트 인코포레이티드 | 전방 표시 장치용 이미지 디스플레이 발생기 |
JP2003046137A (ja) | 2001-07-27 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
KR20040092512A (ko) * | 2003-04-24 | 2004-11-04 | (주)그래픽테크노재팬 | 방열 기능을 갖는 반사판이 구비된 반도체 발광장치 |
JP2005019919A (ja) | 2003-06-30 | 2005-01-20 | Toyoda Gosei Co Ltd | 発光装置 |
-
2005
- 2005-07-04 KR KR1020050059590A patent/KR100665216B1/ko active IP Right Grant
-
2006
- 2006-07-03 US US11/478,621 patent/US7687815B2/en not_active Expired - Fee Related
- 2006-07-04 JP JP2006184094A patent/JP4592650B2/ja not_active Expired - Fee Related
- 2006-07-04 CN CNB2006100957598A patent/CN100433390C/zh not_active Expired - Fee Related
-
2009
- 2009-11-13 US US12/618,445 patent/US8268651B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11500584A (ja) * | 1996-09-20 | 1999-01-12 | シーメンス アクチエンゲゼルシヤフト | 波長変換する注型材料、その使用方法及びその製造方法 |
JPH10215001A (ja) * | 1997-01-31 | 1998-08-11 | Nichia Chem Ind Ltd | 発光装置 |
JP2002190619A (ja) * | 2000-12-22 | 2002-07-05 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP2003273405A (ja) * | 2002-03-19 | 2003-09-26 | Kyocera Corp | 発光素子収納用パッケージ |
JP2005109289A (ja) * | 2003-10-01 | 2005-04-21 | Nichia Chem Ind Ltd | 発光装置 |
JP2005159311A (ja) * | 2003-10-30 | 2005-06-16 | Nichia Chem Ind Ltd | 半導体素子用の支持体及びその製造方法並びに半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US8268651B2 (en) | 2012-09-18 |
JP2007019505A (ja) | 2007-01-25 |
CN100433390C (zh) | 2008-11-12 |
CN1893130A (zh) | 2007-01-10 |
US20070001187A1 (en) | 2007-01-04 |
KR100665216B1 (ko) | 2007-01-09 |
US20100120182A1 (en) | 2010-05-13 |
US7687815B2 (en) | 2010-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4592650B2 (ja) | 改善した側壁反射構造を有する側面型発光ダイオード | |
JP7177331B2 (ja) | 発光装置 | |
JP2007067116A (ja) | 発光装置 | |
JP6060994B2 (ja) | 光半導体装置 | |
JP3872490B2 (ja) | 発光素子収納パッケージ、発光装置および照明装置 | |
JP2008053726A (ja) | 発光ダイオードパッケージ | |
JP2010153666A (ja) | 発光装置、発光モジュール、発光装置の製造方法 | |
JP4143043B2 (ja) | 発光装置および照明装置 | |
WO2013121708A1 (ja) | 発光装置およびその製造方法 | |
JP4948818B2 (ja) | 発光装置および照明装置 | |
CN100487936C (zh) | 半导体发光装置、半导体元件及半导体发光装置的制造方法 | |
JP2005191192A (ja) | 発光素子搭載用基板および発光装置 | |
KR100691178B1 (ko) | 발광 다이오드 칩이 리드 프레임 후방에 배치된 측면형발광 다이오드 | |
KR101406787B1 (ko) | Led 패키지 | |
JP4574248B2 (ja) | 発光装置およびそれを用いた照明装置 | |
JP2006351611A (ja) | 発光素子搭載用基板及びそれを用いた光半導体装置 | |
JP5599299B2 (ja) | 半導体発光装置実装基板の製造方法 | |
JP5845320B2 (ja) | 半導体発光装置 | |
KR20040020239A (ko) | 고출력 led를 위한 역피라미드형 플립 칩 | |
TWI828898B (zh) | 半導體發光裝置及其製造方法 | |
KR102075522B1 (ko) | 발광소자패키지 | |
KR102022460B1 (ko) | 반도체 발광소자 및 이의 제조방법 | |
KR102017730B1 (ko) | 반도체 발광소자용 예비 봉지재 제조방법 | |
JP2005210043A (ja) | 発光素子収納用パッケージおよび発光装置ならびに照明装置 | |
JP2005191138A (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090616 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090916 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20091215 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100415 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20100428 |
|
RD13 | Notification of appointment of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7433 Effective date: 20100527 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100608 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20100527 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100802 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100824 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100914 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4592650 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100930 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
A072 | Dismissal of procedure [no reply to invitation to correct request for examination] |
Free format text: JAPANESE INTERMEDIATE CODE: A072 Effective date: 20110301 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
S633 | Written request for registration of reclamation of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313633 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130924 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |