JP4590820B2 - 面発光型半導体レーザおよびその製造方法 - Google Patents

面発光型半導体レーザおよびその製造方法 Download PDF

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Publication number
JP4590820B2
JP4590820B2 JP2002363486A JP2002363486A JP4590820B2 JP 4590820 B2 JP4590820 B2 JP 4590820B2 JP 2002363486 A JP2002363486 A JP 2002363486A JP 2002363486 A JP2002363486 A JP 2002363486A JP 4590820 B2 JP4590820 B2 JP 4590820B2
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Prior art keywords
film
layer
insulating film
mesa structure
silicon nitride
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Expired - Fee Related
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JP2002363486A
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Japanese (ja)
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JP2004200211A (ja
Inventor
将央 山本
淳 櫻井
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Fujifilm Business Innovation Corp
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Fuji Xerox Co Ltd
Fujifilm Business Innovation Corp
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Application filed by Fuji Xerox Co Ltd, Fujifilm Business Innovation Corp filed Critical Fuji Xerox Co Ltd
Priority to JP2002363486A priority Critical patent/JP4590820B2/ja
Priority to US10/625,687 priority patent/US7020173B2/en
Priority to CNB031535445A priority patent/CN1251371C/zh
Priority to CNA2005100958242A priority patent/CN1747263A/zh
Publication of JP2004200211A publication Critical patent/JP2004200211A/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2002363486A 2002-12-16 2002-12-16 面発光型半導体レーザおよびその製造方法 Expired - Fee Related JP4590820B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002363486A JP4590820B2 (ja) 2002-12-16 2002-12-16 面発光型半導体レーザおよびその製造方法
US10/625,687 US7020173B2 (en) 2002-12-16 2003-07-24 Surface emitting semiconductor laser and method of fabricating the same
CNB031535445A CN1251371C (zh) 2002-12-16 2003-08-15 表面发射型半导体激光器及其制造方法
CNA2005100958242A CN1747263A (zh) 2002-12-16 2003-08-15 表面发射型半导体激光器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002363486A JP4590820B2 (ja) 2002-12-16 2002-12-16 面発光型半導体レーザおよびその製造方法

Publications (2)

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JP2004200211A JP2004200211A (ja) 2004-07-15
JP4590820B2 true JP4590820B2 (ja) 2010-12-01

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US (1) US7020173B2 (zh)
JP (1) JP4590820B2 (zh)
CN (2) CN1251371C (zh)

Families Citing this family (46)

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WO2002084829A1 (en) * 2001-04-11 2002-10-24 Cielo Communications, Inc. Long wavelength vertical cavity surface emitting laser
JP3838218B2 (ja) * 2003-05-19 2006-10-25 ソニー株式会社 面発光型半導体レーザ素子及びその製造方法
US7054345B2 (en) * 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
JP2005026688A (ja) * 2003-06-30 2005-01-27 Osram Opto Semiconductors Gmbh 放射放出半導体チップ、該半導体チップの作製方法および該半導体チップの明るさの調整設定方法
US6979582B2 (en) * 2003-09-22 2005-12-27 National Chung-Hsing University Vertical-cavity surface emitting laser diode and method for producing the same
JP4437913B2 (ja) * 2003-11-25 2010-03-24 富士ゼロックス株式会社 表面発光型半導体レーザ素子およびその製造方法
DE102004029412A1 (de) * 2004-02-27 2005-10-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips
WO2006080153A1 (ja) * 2005-01-28 2006-08-03 Nec Corporation 半導体受光素子及びその製造方法
KR101111720B1 (ko) * 2005-10-12 2012-02-15 삼성엘이디 주식회사 활성층 상에 유전체층이 형성된 측면 발광형 반도체 레이저다이오드
DE102006061167A1 (de) * 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP2007299896A (ja) * 2006-04-28 2007-11-15 Ricoh Co Ltd 面発光レーザ素子、それを備えた面発光レーザアレイおよびその面発光レーザアレイを備えた画像形成装置
JP4091647B2 (ja) * 2006-07-21 2008-05-28 三菱電機株式会社 半導体光素子の製造方法
EP2054980B1 (en) * 2006-08-23 2013-01-09 Ricoh Company, Ltd. Surface-emitting laser array, optical scanning device, and image forming device
JP2008053353A (ja) * 2006-08-23 2008-03-06 Ricoh Co Ltd 面発光レーザアレイ、それに用いられる面発光レーザ素子および面発光レーザアレイの製造方法
JP4934399B2 (ja) * 2006-10-24 2012-05-16 古河電気工業株式会社 面発光レーザ素子および面発光レーザ素子アレイ
US20080160786A1 (en) * 2006-12-27 2008-07-03 United Microelectronics Corp. Method for increasing film stress and method for forming high stress layer
JP4878322B2 (ja) * 2007-03-29 2012-02-15 古河電気工業株式会社 面発光レーザ素子および面発光レーザ素子の製造方法
JP2008283028A (ja) * 2007-05-11 2008-11-20 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザの製造方法、モジュール、光源装置、情報処理装置、光送信装置、光空間伝送装置および光空間伝送システム。
US7612457B2 (en) * 2007-06-21 2009-11-03 Infineon Technologies Ag Semiconductor device including a stress buffer
JP4973940B2 (ja) * 2007-10-15 2012-07-11 ソニー株式会社 半導体発光素子の製造方法
US7957447B2 (en) 2007-11-20 2011-06-07 Fuji Xerox Co., Ltd. VCSEL array device and method for manufacturing the VCSEL array device
JP4609508B2 (ja) * 2007-11-20 2011-01-12 富士ゼロックス株式会社 層間絶縁膜の応力制御により信頼性を改善した表面発光型半導体レーザアレイ素子
JP5274038B2 (ja) * 2008-02-06 2013-08-28 キヤノン株式会社 垂直共振器型面発光レーザの製造方法とレーザアレイの製造方法
JP5515767B2 (ja) * 2009-05-28 2014-06-11 株式会社リコー 面発光レーザ素子の製造方法、面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
JP5293450B2 (ja) * 2009-06-24 2013-09-18 株式会社リコー 面発光レーザの製造方法、該製造方法により製造された面発光レーザ、およびそれを用いた面発光レーザアレイ素子、光走査装置、ならびに画像形成装置
JP5521411B2 (ja) * 2009-07-03 2014-06-11 ソニー株式会社 半導体レーザ装置
US8204093B2 (en) * 2009-09-16 2012-06-19 The Furukawa Electric Co., Ltd. Method of manufacturing vertical-cavity surface emitting laser and vertical-cavity surface emitting laser array
JP5618812B2 (ja) * 2010-01-06 2014-11-05 キヤノン株式会社 面発光レーザの製造方法
US8416821B2 (en) 2010-06-11 2013-04-09 Ricoh Company, Ltd. Surface emitting laser element, surface emitting laser array, optical scanning unit, image forming apparatus and method of manufacturing surface emitting laser element
TWI427879B (zh) * 2010-12-22 2014-02-21 Univ Nat Central Vertical Resonant Cavity with Infrared Profile
JP5633435B2 (ja) * 2011-03-09 2014-12-03 日亜化学工業株式会社 面発光レーザ素子
JP6176298B2 (ja) * 2015-09-03 2017-08-09 富士ゼロックス株式会社 面発光型半導体レーザアレイ及び面発光型半導体レーザアレイの製造方法
DE102015116336B4 (de) * 2015-09-28 2020-03-19 Osram Opto Semiconductors Gmbh Halbleiterlaser
CN105610047B (zh) * 2016-01-01 2018-09-21 西安电子科技大学 GeSn多量子阱金属腔激光器及其制作方法
WO2019088045A1 (ja) * 2017-10-31 2019-05-09 ローム株式会社 面発光半導体レーザ
WO2019194600A1 (ko) * 2018-04-04 2019-10-10 엘지이노텍 주식회사 표면 광방출 레이저 소자
CN108847573B (zh) * 2018-06-27 2021-06-01 湖北光安伦芯片有限公司 垂直腔面发射激光器及其制作方法
CN111092366B (zh) * 2018-10-23 2021-04-06 山东华光光电子股份有限公司 一种具有双面电流限制结构的半导体激光器及制备方法
CN109659812B (zh) * 2019-01-30 2024-07-05 厦门乾照半导体科技有限公司 一种具有odr的倒装vcsel芯片及其制作方法
CN110061414A (zh) * 2019-04-02 2019-07-26 苏州长光华芯光电技术有限公司 一种半导体激光器芯片
US11362486B2 (en) 2019-05-06 2022-06-14 Mellanox Technologies, Ltd. High speed high bandwidth vertical-cavity surface-emitting laser with controlled overshoot
US11165222B2 (en) * 2019-05-06 2021-11-02 Mellanox Technologies, Ltd. Optically matched vertical-cavity surface-emitting laser (VCSEL) with passivation
CN111244759A (zh) * 2020-01-16 2020-06-05 常州纵慧芯光半导体科技有限公司 一种具有透明顶衬与背面正负电极的vcsel器件及其制备方法
CN111293584B (zh) * 2020-02-20 2021-04-16 浙江博升光电科技有限公司 多层多区垂直腔面发射激光器装置
CN111682401B (zh) * 2020-08-14 2020-10-30 江西铭德半导体科技有限公司 一种vcsel芯片及其制造方法
CN111817129A (zh) * 2020-08-31 2020-10-23 江西铭德半导体科技有限公司 一种vcsel芯片及其制造方法

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JP2002335045A (ja) * 2001-03-08 2002-11-22 Ricoh Co Ltd 面発光半導体レーザ素子及び光伝送システム

Also Published As

Publication number Publication date
CN1508915A (zh) 2004-06-30
JP2004200211A (ja) 2004-07-15
CN1747263A (zh) 2006-03-15
US7020173B2 (en) 2006-03-28
CN1251371C (zh) 2006-04-12
US20040151221A1 (en) 2004-08-05

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