JP4579941B2 - 半導体装置及び半導体装置製造方法 - Google Patents
半導体装置及び半導体装置製造方法 Download PDFInfo
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- JP4579941B2 JP4579941B2 JP2007091925A JP2007091925A JP4579941B2 JP 4579941 B2 JP4579941 B2 JP 4579941B2 JP 2007091925 A JP2007091925 A JP 2007091925A JP 2007091925 A JP2007091925 A JP 2007091925A JP 4579941 B2 JP4579941 B2 JP 4579941B2
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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Description
2 接着剤層
3 半導体チップ
4 接着剤層
5 スペーサチップ
6 接着剤層
7 半導体チップ
8、9 ボンディングワイヤ
10 インナーリード(端子部)
11 モールド
12 ウエハ
AA、BB、CC、DD 角度
BL1、BL2 ブレード
DP 深さ
S1、S2、T1、T2 傾斜面
Claims (6)
- 支持基板上に積層されている複数の半導体チップと、
前記複数の半導体チップの内の上下に隣接する2つの半導体チップの間に配置され且つ当該2つの半導体チップの各々と接着剤層を介して接着されているスペーサチップと、
前記複数の半導体チップの各々にボンディングワイヤを介して電気的に接続されている端子部と、
前記端子部の一部と前記半導体チップと前記スペーサチップと前記ボンディングワイヤとを包埋しているモールドと、を含む半導体装置であって、
前記スペーサチップの上面の面積がその下面の面積よりも狭く且つ当該スペーサチップの下面にその上面が貼り付けられている接着剤層の端面が当該スペーサチップの下面よりも外側にはみ出していることを特徴とする半導体装置。 - 前記スペーサチップの下面にその上面が貼り付けられている接着剤層の下面から当該スペーサチップの上面に亘って当該スペーサチップ及び接着剤層の端面が互いに連続している傾斜面を形成していることを特徴とする請求項1に記載の半導体装置。
- 前記スペーサチップの端面が屈曲した断面を有することを特徴とする請求項1もしくは2のいずれか1項に記載の半導体装置。
- 複数の半導体チップを用意する半導体チップ用意工程と、
少なくとも1のスペーサチップを用意するスペーサチップ用意工程と、
前記スペーサチップを介して前記複数の半導体チップを支持基板上に積層する半導体チップ積層工程と、
前記複数の半導体チップの各々にボンディングワイヤを介して電気的に端子部を接続する端子部接続工程と、
前記端子部の一部と前記半導体チップと前記スペーサチップと前記ボンディングワイヤとをモールドで包埋するモールド包埋工程と、を含む半導体装置製造方法であって、
前記スペーサチップ用意工程は、
ウエハの片面に接着剤層を貼り付ける接着剤層貼り付け工程と、
その刃先がV字型の傾斜面をなすブレードで前記ウエハ及び接着剤層を傾斜切断する切断工程と、を含むことを特徴とする半導体装置製造方法。 - 前記切断工程は、
その刃先がV字型の傾斜面をなすブレードで前記ウエハの表面から所定の深さまで溝入れする溝入れ工程を含み、
当該溝入れ工程に続いてその刃先が前記V字型の傾斜面がなす角度よりも小さい角度のV字型の傾斜面をなす別のブレードで当該溝入れされた箇所のウエハ及び接着剤層を傾斜切断することを特徴とする請求項4に記載の半導体装置製造方法。 - 前記溝入れ工程は、前記ウエハの表面から裏面まで溝入れする工程であることを特徴とする請求項5に記載の半導体装置製造方法。
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JP2007091925A JP4579941B2 (ja) | 2007-03-30 | 2007-03-30 | 半導体装置及び半導体装置製造方法 |
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JP2009293235A Division JP5284257B2 (ja) | 2009-12-24 | 2009-12-24 | 半導体装置 |
JP2009293247A Division JP5080551B2 (ja) | 2009-12-24 | 2009-12-24 | 半導体装置の製造方法 |
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JP2008251873A JP2008251873A (ja) | 2008-10-16 |
JP4579941B2 true JP4579941B2 (ja) | 2010-11-10 |
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JP5223231B2 (ja) * | 2007-04-26 | 2013-06-26 | 富士通セミコンダクター株式会社 | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006054359A (ja) * | 2004-08-13 | 2006-02-23 | Fujitsu Ltd | 半導体装置 |
JP2006066816A (ja) * | 2004-08-30 | 2006-03-09 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
JP2006222470A (ja) * | 2006-05-29 | 2006-08-24 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
JP2006294795A (ja) * | 2005-04-08 | 2006-10-26 | Toshiba Corp | 半導体装置およびその製造方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006054359A (ja) * | 2004-08-13 | 2006-02-23 | Fujitsu Ltd | 半導体装置 |
JP2006066816A (ja) * | 2004-08-30 | 2006-03-09 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
JP2006294795A (ja) * | 2005-04-08 | 2006-10-26 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2006222470A (ja) * | 2006-05-29 | 2006-08-24 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
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