JP4578971B2 - フォトレジストとして有用なフッ素化ポリマーおよび微細平版印刷のための方法 - Google Patents

フォトレジストとして有用なフッ素化ポリマーおよび微細平版印刷のための方法 Download PDF

Info

Publication number
JP4578971B2
JP4578971B2 JP2004529165A JP2004529165A JP4578971B2 JP 4578971 B2 JP4578971 B2 JP 4578971B2 JP 2004529165 A JP2004529165 A JP 2004529165A JP 2004529165 A JP2004529165 A JP 2004529165A JP 4578971 B2 JP4578971 B2 JP 4578971B2
Authority
JP
Japan
Prior art keywords
fluorine
ethylenically unsaturated
containing copolymer
photoresist composition
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004529165A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005536589A (ja
JP2005536589A5 (enExample
Inventor
エドワード フェイリング アンドリュー
エル．シャット ザ サード フランク
ブラウン ファーナム ウィリアム
フェルドマン ジェラルド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2005536589A publication Critical patent/JP2005536589A/ja
Publication of JP2005536589A5 publication Critical patent/JP2005536589A5/ja
Application granted granted Critical
Publication of JP4578971B2 publication Critical patent/JP4578971B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F14/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F14/18—Monomers containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18—Monomers containing fluorine
    • C08F214/26—Tetrafluoroethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C08F220/24—Esters containing halogen containing perhaloalkyl radicals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/12—Hydrolysis
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2800/00—Copolymer characterised by the proportions of the comonomers expressed
    • C08F2800/20—Copolymer characterised by the proportions of the comonomers expressed as weight or mass percentages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
JP2004529165A 2002-08-19 2003-08-19 フォトレジストとして有用なフッ素化ポリマーおよび微細平版印刷のための方法 Expired - Fee Related JP4578971B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40437402P 2002-08-19 2002-08-19
PCT/US2003/026088 WO2004016664A1 (en) 2002-08-19 2003-08-19 Fluorinated polymers useful as photoresists, and processes for microlithography

Publications (3)

Publication Number Publication Date
JP2005536589A JP2005536589A (ja) 2005-12-02
JP2005536589A5 JP2005536589A5 (enExample) 2006-09-21
JP4578971B2 true JP4578971B2 (ja) 2010-11-10

Family

ID=31888358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004529165A Expired - Fee Related JP4578971B2 (ja) 2002-08-19 2003-08-19 フォトレジストとして有用なフッ素化ポリマーおよび微細平版印刷のための方法

Country Status (10)

Country Link
US (1) US7312287B2 (enExample)
EP (1) EP1551886B1 (enExample)
JP (1) JP4578971B2 (enExample)
KR (1) KR20050062540A (enExample)
CN (1) CN1675262A (enExample)
AT (1) ATE408173T1 (enExample)
AU (1) AU2003259951A1 (enExample)
DE (1) DE60323521D1 (enExample)
TW (1) TW200403257A (enExample)
WO (1) WO2004016664A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050062540A (ko) * 2002-08-19 2005-06-23 이 아이 듀폰 디 네모아 앤드 캄파니 포토레지스트로서 유용한 플루오르화 중합체 및 마이크로리소그래피법
JP5560854B2 (ja) * 2010-03-31 2014-07-30 Ｊｓｒ株式会社 感放射線性樹脂組成物およびそれに用いる重合体
EP2645178B1 (en) * 2010-11-24 2021-06-23 AGC Inc. Seal ring for automobile, and seal ring and sliding member for industrial gas compressor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229473A (en) * 1989-07-07 1993-07-20 Daikin Industries Ltd. Fluorine-containing copolymer and method of preparing the same
JP4034896B2 (ja) * 1997-11-19 2008-01-16 松下電器産業株式会社 レジスト組成物及びこれを用いたパターン形成方法
JPH11265067A (ja) * 1998-01-16 1999-09-28 Jsr Corp 感放射線性樹脂組成物
JP4327360B2 (ja) * 1998-09-23 2009-09-09 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ホトレジスト、ポリマーおよびマイクロリソグラフィの方法
AU4678100A (en) * 1999-05-04 2000-11-17 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
KR100535149B1 (ko) * 1999-08-17 2005-12-07 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
JP4240786B2 (ja) * 1999-09-17 2009-03-18 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2003532765A (ja) * 2000-05-05 2003-11-05 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー フォトレジスト用コポリマーおよびそのための方法
EP1246013A3 (en) * 2001-03-30 2003-11-19 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6737215B2 (en) * 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
KR20050062540A (ko) * 2002-08-19 2005-06-23 이 아이 듀폰 디 네모아 앤드 캄파니 포토레지스트로서 유용한 플루오르화 중합체 및 마이크로리소그래피법

Also Published As

Publication number Publication date
WO2004016664A1 (en) 2004-02-26
DE60323521D1 (de) 2008-10-23
JP2005536589A (ja) 2005-12-02
AU2003259951A1 (en) 2004-03-03
ATE408173T1 (de) 2008-09-15
CN1675262A (zh) 2005-09-28
US7312287B2 (en) 2007-12-25
KR20050062540A (ko) 2005-06-23
EP1551886A4 (en) 2007-11-14
EP1551886A1 (en) 2005-07-13
TW200403257A (en) 2004-03-01
US20060166129A1 (en) 2006-07-27
EP1551886B1 (en) 2008-09-10

Similar Documents

Publication Publication Date Title
JP4402304B2 (ja) フッ素化ポリマー、フォトレジストおよびミクロリソグラフィーのための方法
US6790587B1 (en) Fluorinated polymers, photoresists and processes for microlithography
JP4327360B2 (ja) ホトレジスト、ポリマーおよびマイクロリソグラフィの方法
JP5573595B2 (ja) ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP4303202B2 (ja) 弗素化ポリマー、フォトレジストおよびミクロ平版印刷のための方法
JP2005532413A (ja) エステル基を有するフッ素化ポリマー、およびマイクロリソグラフィー用フォトレジスト
EP1383812B1 (en) Polycyclic fluorine-containing polymers and photoresists for microlithography
JP4610335B2 (ja) フォトレジストとして有用な縮合４員環状炭素を有する多環式基を有するフッ素化ポリマーおよび微細平版印刷のための方法
JP4261303B2 (ja) 水酸化され、光酸で切断可能な基を有するフォトレジスト
JP4578971B2 (ja) フォトレジストとして有用なフッ素化ポリマーおよび微細平版印刷のための方法
JP2005535709A (ja) フォトレジストとして有用な縮合４員複素環を有する多環式基を有するフッ素化モノマー、フッ素化ポリマー、および微細平版印刷のための方法
JP2005535780A (ja) フォトレジスト、フルオロポリマーおよび１５７ｎｍ微細平版印刷のための方法
JP2005519167A (ja) ミクロ平版印刷法のための弗素化コポリマー
US20040092686A1 (en) Polycyclic fluorine-containing polymers and photoresists for microlithography

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060802

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060802

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091211

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100309

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100316

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100820

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100825

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130903

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees