JP4572434B2 - 磁気抵抗効果素子、磁気抵抗効果型ヘッド、及びメモリ−素子 - Google Patents

磁気抵抗効果素子、磁気抵抗効果型ヘッド、及びメモリ−素子 Download PDF

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Publication number
JP4572434B2
JP4572434B2 JP32403799A JP32403799A JP4572434B2 JP 4572434 B2 JP4572434 B2 JP 4572434B2 JP 32403799 A JP32403799 A JP 32403799A JP 32403799 A JP32403799 A JP 32403799A JP 4572434 B2 JP4572434 B2 JP 4572434B2
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JP
Japan
Prior art keywords
magnetic
magnetoresistive
film
layer
effect element
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Expired - Fee Related
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JP32403799A
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English (en)
Japanese (ja)
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JP2000340859A5 (enExample
JP2000340859A (ja
Inventor
博 榊間
雅祥 平本
望 松川
秀明 足立
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Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP32403799A priority Critical patent/JP4572434B2/ja
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Publication of JP2000340859A5 publication Critical patent/JP2000340859A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
JP32403799A 1999-03-23 1999-11-15 磁気抵抗効果素子、磁気抵抗効果型ヘッド、及びメモリ−素子 Expired - Fee Related JP4572434B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32403799A JP4572434B2 (ja) 1999-03-23 1999-11-15 磁気抵抗効果素子、磁気抵抗効果型ヘッド、及びメモリ−素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-77384 1999-03-23
JP7738499 1999-03-23
JP32403799A JP4572434B2 (ja) 1999-03-23 1999-11-15 磁気抵抗効果素子、磁気抵抗効果型ヘッド、及びメモリ−素子

Publications (3)

Publication Number Publication Date
JP2000340859A JP2000340859A (ja) 2000-12-08
JP2000340859A5 JP2000340859A5 (enExample) 2006-11-09
JP4572434B2 true JP4572434B2 (ja) 2010-11-04

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JP32403799A Expired - Fee Related JP4572434B2 (ja) 1999-03-23 1999-11-15 磁気抵抗効果素子、磁気抵抗効果型ヘッド、及びメモリ−素子

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JP (1) JP4572434B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002099906A1 (en) * 2001-06-04 2002-12-12 Matsushita Electric Industrial Co., Ltd. Magnetoresistance element and magnetoresistance storage element and magnetic memory
JP2003031867A (ja) 2001-07-17 2003-01-31 Hitachi Ltd 酸化物磁性層と金属磁性膜を積層した磁気抵抗効果素子
FR2830971B1 (fr) * 2001-10-12 2004-03-12 Commissariat Energie Atomique Dispositif magnetoresistif a vanne de spin a performances ameliorees
US7477490B2 (en) * 2004-06-30 2009-01-13 Seagate Technology Llc Single sensor element that is naturally differentiated
JP6553857B2 (ja) * 2014-09-18 2019-07-31 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 磁気トンネル接合素子及び磁気ランダムアクセスメモリ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69407158T2 (de) * 1993-10-06 1998-05-28 Koninkl Philips Electronics Nv Magnetoresistive anordnung und diese verwendender magnetkopf
JPH1041561A (ja) * 1996-07-25 1998-02-13 Sanyo Electric Co Ltd 磁気抵抗効果素子
JP2924825B2 (ja) * 1996-10-31 1999-07-26 日本電気株式会社 磁気抵抗効果素子及びこれを用いた磁気抵抗効果センサ
JP3601690B2 (ja) * 1999-03-02 2004-12-15 松下電器産業株式会社 磁気抵抗効果素子とその製造方法、磁気抵抗効果型ヘッド、磁気記録装置、磁気抵抗効果メモリ素子
US6556390B1 (en) * 1999-10-28 2003-04-29 Seagate Technology Llc Spin valve sensors with an oxide layer utilizing electron specular scattering effect

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JP2000340859A (ja) 2000-12-08

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