JP4571866B2 - 小さな基板面の電気構成素子 - Google Patents
小さな基板面の電気構成素子 Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/644—Coupled resonator filters having two acoustic tracks
- H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
- H03H9/6469—Coupled resonator filters having two acoustic tracks being electrically coupled via two connecting electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
- H03H9/14594—Plan-rotated or plan-tilted transducers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/643—Means for obtaining a particular transfer characteristic the transfer characteristic being determined by reflective or coupling array characteristics
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
図2は、楕円のソルダリングメタライゼーションを有する本発明の2トラックDMSを示す図、
図3は、付加的に斜めにされたレフレクタを有する2トラックDMSを示す図、
図4は、各トラック間にソルダリングメタライゼーションが設けられているフィルタを示す図、
図5は、付加的なレフレクタが斜めにされた図4のフィルタを示す図、
図6は、ソルダリングメタライゼーション全てが相互に平行列に設けられているフィルタを示す図、
図7は、図6の実施例に対してソルダリングメタライゼーションの個数が減らされているフィルタを示す図、
図8は、付加的なレフレクタが斜めにされた図7のフィルタを示す図、
図9は、音響トラックが基板の対角線に対して平行に設けられたフィルタを示す図、
図10は、付加的なレフレクタが斜めにされた図9と同様のフィルタを示す図、
図11は、DMSトラックの入力側及び出力側が、レゾネータと共に直列に接続されているフィルタを示す図、
図12は、付加的なレフレクタが斜めにされた図11と同様のフィルタを示す図、
図13は、DMSトラックの入力側及び出力側がレゾネータと直列に接続されている別のフィルタを示す図、
図14は、付加的なレフレクタが斜めにされた図13と同様のフィルタを示す図、
図15は、2つの直列共振器を有するDMSフィルタを示す図、
図16は、2つの直列共振器とインピーダンス変換部を有するDMSトラック付のDMSフィルタを示す図、
図17は、2つの直列共振器付の対角線方向に配向されたDMSフィルタを示す図、
図18は、付加的なレフレクタが斜めにされた図17と同様のフィルタを示す図、
図19は、直列共振器付のDMSフィルタを示す図、
図20は、付加的なレフレクタが斜めにされた図19と同様のフィルタを示す図、
図21は、対角線方向に配向された図19と同様のフィルタを示す図、
図22は、付加的なレフレクタが斜めにされた図21と同様のフィルタを示す図、
図23は、外側に設けられた丸くないソルダリングメタライゼーションを有するハシゴ型フィルタを示す図、
図24は、坦体を有する本発明の構成素子の横断略図
である。
−各々本発明のように構成されたケーシング乃至坦体上に1つ以上のチップを用いること
−ここで説明したのとは別のフィルタ技術を用いること
−ソルダリングメタライゼーションの別の形式
−SAW又はBAWフィルタとは別の構成部品、又は
−SAW又はBAWフィルタを別の構成部品と組み合わせること
Claims (13)
- 電気構成素子において、
構成素子構造体(BS)を有する基板(S)を有しており、
該基板の一方の表面上に、前記構成素子構造体と電気的に接続されたソルダーメタライゼーション(LM,LA)が設けられており、
前記基板は、フリップチップ構成で電気的且つ機械的に、ソルダーバンプ(B)によって形成された各バンプ結合部を介して坦体(T)と結合されており、
前記ソルダーバンプは、前記基板のソルダーメタライゼーション上に載置されており、
前記各バンプ結合部の少なくとも1つは、丸くないソルダーメタライゼーション上に載置されており、
前記ソルダーメタライゼーションでは、第2の軸に沿った拡がりが、第1の軸に沿った拡がりよりも30%以上、大きく、
前記第1の軸は楕円の短軸であり、前記第2の軸は楕円の長軸であり、
前記丸くないソルダーメタライゼーション(LA)は、基板エッジと前記構成素子構造体(BS)との間に設けられており、基板表面の節約のために、前記基板エッジに対して平行な第2の軸で整列されており、
前記構成素子構造体(BS)は、少なくとも1つのインターディジタルコンバータと、当該インターディジタルコンバータに配属された、レフレクタフィンガを有するレフレクタとを有しており、
少なくとも1つの前記レフレクタが斜めにされており、前記ソルダーメタライゼーション(LA)の少なくとも1つは、少なくとも部分的に前記レフレクタを斜めにしたことによってあけられた面積内に位置している
ことを特徴とする電気構成素子。 - 前記構成素子構造体(BS)及び前記ソルダーメタライゼーション(LM,LA)は、基板(S)の同一表面上に設けられている請求項1記載の電気構成素子。
- 前記丸くないソルダーメタライゼーション(LM)は、各構成素子構造体間に設けられており、基板表面の節約のために、前記構成素子構造体のエッジに対して平行な前記第2の軸で整列されている請求項1または2記載の電気構成素子。
- 前記構成素子構造体(BS)は、前記基板(S)上に少なくとも1つのSAWフィルタを構成している請求項1から3までのいずれか1項記載の電気構成素子。
- 前記斜めにされたレフレクタは、各々第1及び第2のグループのレフレクタフィンガを有しており、
前記第1のグループは、各々配属されたインターディジタルコンバータの近傍に設けられており、
前記第2のグループのレフレクタフィンガの長手方向の一方の側又は両側の長さが短縮されており、
前記レフレクタフィンガの長さは、配属された前記インターディジタルコンバータに対する距離が長くなるにつれて短くされている請求項1から4までのいずれか1項記載の電気構成素子。 - 前記第1のグループは、20〜50のレフレクタフィンガを有している請求項5記載の電気構成素子。
- 前記基板(S)上に、少なくとも1つのDMSフィルタタイプのSAWフィルタが構成されている請求項1から6までのいずれか1項記載の電気構成素子。
- 前記基板(S)上に、少なくとも1つのDMSフィルタタイプのSAWフィルタと、該SAWフィルタと接続された付加的な共振器が構成されている請求項7記載の電気構成素子。
- 前記基板(S)上には、少なくとも1つの、ハシゴ(ラダー)型フィルタタイプのSAWフィルタが構成されている請求項1から5までのいずれか1項記載の電気構成素子。
- 前記基板(S)として、圧電基板が使用されている請求項1から9までのいずれか1項記載の電気構成素子。
- 前記圧電基板(S)は、LiTaO3又はLiNbO3である請求項10記載の電気構成素子。
- 前記基板(S)としてSiが使用されている請求項1から5までのいずれか1項記載の電気構成素子。
- HFフィルタとして構成されている請求項1から12までのいずれか1項記載の電気構成素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10301934A DE10301934A1 (de) | 2003-01-20 | 2003-01-20 | Elektrisches Bauelement mit verringerter Substratfläche |
PCT/EP2003/014349 WO2004066491A1 (de) | 2003-01-20 | 2003-12-16 | Elektrisches bauelement mit verringerter substratfläche |
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Publication Number | Publication Date |
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JP2006513648A JP2006513648A (ja) | 2006-04-20 |
JP4571866B2 true JP4571866B2 (ja) | 2010-10-27 |
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JP2004566780A Expired - Lifetime JP4571866B2 (ja) | 2003-01-20 | 2003-12-16 | 小さな基板面の電気構成素子 |
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Country | Link |
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US (1) | US8022556B2 (ja) |
JP (1) | JP4571866B2 (ja) |
KR (1) | KR101053017B1 (ja) |
DE (1) | DE10301934A1 (ja) |
WO (1) | WO2004066491A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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DE10301934A1 (de) | 2003-01-20 | 2004-07-29 | Epcos Ag | Elektrisches Bauelement mit verringerter Substratfläche |
DE102005009358B4 (de) * | 2005-03-01 | 2021-02-04 | Snaptrack, Inc. | Lötfähiger Kontakt und ein Verfahren zur Herstellung |
DE102005013895B4 (de) | 2005-03-24 | 2019-08-08 | Snaptrack, Inc. | Elektrisches Filter |
CN102362431B (zh) * | 2009-03-30 | 2015-07-22 | 株式会社村田制作所 | 弹性波滤波器 |
US20220311417A1 (en) * | 2021-03-29 | 2022-09-29 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with busbar side edges that form angles with a perimeter of the cavity |
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DE19730710C2 (de) * | 1997-07-17 | 2002-12-05 | Epcos Ag | Oberflächenwellenakustikfilter mit verbesserter Flankensteilheit |
JP3196693B2 (ja) * | 1997-08-05 | 2001-08-06 | 日本電気株式会社 | 表面弾性波装置およびその製造方法 |
JPH11122072A (ja) * | 1997-10-14 | 1999-04-30 | Fujitsu Ltd | 弾性表面波装置 |
DE19758198A1 (de) * | 1997-12-30 | 1999-08-19 | Siemens Ag | Oberflächenwellen-(SAW-)Bauelement auf auch pyroelektrischem Einkristall-Substrat |
JP3346320B2 (ja) * | 1999-02-03 | 2002-11-18 | カシオ計算機株式会社 | 半導体装置及びその製造方法 |
DE19932649A1 (de) * | 1999-07-13 | 2001-02-08 | Epcos Ag | SAW-Filter des Reaktanzfiltertyps mit verbesserter Sperrbereichsunterdrückung und Verfahren zur Optimierung der Sperrbereichsunterdrückung |
JP3860364B2 (ja) * | 1999-08-11 | 2006-12-20 | 富士通メディアデバイス株式会社 | 弾性表面波装置 |
US6315197B1 (en) * | 1999-08-19 | 2001-11-13 | Mitsubishi Electric Research Laboratories | Vision-enabled vending machine |
JP3321443B2 (ja) * | 1999-10-26 | 2002-09-03 | 東洋通信機株式会社 | 1次−3次縦結合二重モードsawフィルタ |
KR100788011B1 (ko) * | 1999-12-21 | 2007-12-21 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 플립 칩 접속부를 신뢰성 있게 하기 위해 솔더를 사용한유기 패키지 |
JP2001267881A (ja) | 2000-03-17 | 2001-09-28 | Fujitsu Media Device Kk | 弾性表面波デバイス及びこれを用いた通信装置、並びにアンテナデュプレクサ |
DE10013861A1 (de) * | 2000-03-21 | 2001-09-27 | Epcos Ag | Dualmode-Oberflächenwellenfilter mit verbesserter Symmetrie und erhöhter Sperrdämpfung |
US6566980B2 (en) * | 2000-03-30 | 2003-05-20 | Sawtek, Inc. | Die layout for SAW devices and associated methods |
WO2001082480A1 (fr) * | 2000-04-24 | 2001-11-01 | Mitsubishi Denki Kabushiki Kaisha | Filtre a ondes acoustiques de surface a couplage vertical |
US6518675B2 (en) * | 2000-12-29 | 2003-02-11 | Samsung Electronics Co., Ltd. | Wafer level package and method for manufacturing the same |
JP3414384B2 (ja) * | 2001-01-12 | 2003-06-09 | 株式会社村田製作所 | 弾性表面波フィルタ、およびそれを用いた通信機装置 |
JP2003087080A (ja) * | 2001-07-06 | 2003-03-20 | Murata Mfg Co Ltd | 弾性表面波素子及びその製造方法 |
JP2003198317A (ja) * | 2001-12-21 | 2003-07-11 | Fujitsu Media Device Kk | 弾性表面波共振子及び弾性表面波フィルタ |
DE10301934A1 (de) | 2003-01-20 | 2004-07-29 | Epcos Ag | Elektrisches Bauelement mit verringerter Substratfläche |
DE102004037817B4 (de) * | 2004-08-04 | 2014-08-07 | Epcos Ag | Elektrisches Bauelement in Flip-Chip-Bauweise |
-
2003
- 2003-01-20 DE DE10301934A patent/DE10301934A1/de not_active Withdrawn
- 2003-12-16 US US10/542,841 patent/US8022556B2/en active Active
- 2003-12-16 WO PCT/EP2003/014349 patent/WO2004066491A1/de active Application Filing
- 2003-12-16 JP JP2004566780A patent/JP4571866B2/ja not_active Expired - Lifetime
- 2003-12-16 KR KR1020057013405A patent/KR101053017B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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US8022556B2 (en) | 2011-09-20 |
WO2004066491A1 (de) | 2004-08-05 |
US20070029679A1 (en) | 2007-02-08 |
KR20050090008A (ko) | 2005-09-09 |
KR101053017B1 (ko) | 2011-07-29 |
JP2006513648A (ja) | 2006-04-20 |
DE10301934A1 (de) | 2004-07-29 |
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