JP4565883B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP4565883B2
JP4565883B2 JP2004130710A JP2004130710A JP4565883B2 JP 4565883 B2 JP4565883 B2 JP 4565883B2 JP 2004130710 A JP2004130710 A JP 2004130710A JP 2004130710 A JP2004130710 A JP 2004130710A JP 4565883 B2 JP4565883 B2 JP 4565883B2
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Japan
Prior art keywords
clock signal
voltage
semiconductor integrated
integrated circuit
circuit device
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Expired - Fee Related
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JP2004130710A
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English (en)
Japanese (ja)
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JP2005318034A (ja
JP2005318034A5 (enExample
Inventor
良樹 川尻
正明 寺沢
孝徳 山添
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Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2004130710A priority Critical patent/JP4565883B2/ja
Priority to US11/115,132 priority patent/US7251162B2/en
Publication of JP2005318034A publication Critical patent/JP2005318034A/ja
Publication of JP2005318034A5 publication Critical patent/JP2005318034A5/ja
Priority to US11/819,288 priority patent/US7411831B2/en
Priority to US12/171,724 priority patent/US7652924B2/en
Application granted granted Critical
Publication of JP4565883B2 publication Critical patent/JP4565883B2/ja
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manipulation Of Pulses (AREA)
JP2004130710A 2004-04-27 2004-04-27 半導体集積回路装置 Expired - Fee Related JP4565883B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004130710A JP4565883B2 (ja) 2004-04-27 2004-04-27 半導体集積回路装置
US11/115,132 US7251162B2 (en) 2004-04-27 2005-04-27 Nonvolatile memory with multi-frequency charge pump control
US11/819,288 US7411831B2 (en) 2004-04-27 2007-06-26 Disk processing apparatus with voltage generating circuit having a boost ratio control
US12/171,724 US7652924B2 (en) 2004-04-27 2008-07-11 Data processing circuit for contactless IC card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004130710A JP4565883B2 (ja) 2004-04-27 2004-04-27 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2005318034A JP2005318034A (ja) 2005-11-10
JP2005318034A5 JP2005318034A5 (enExample) 2007-06-21
JP4565883B2 true JP4565883B2 (ja) 2010-10-20

Family

ID=35136232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004130710A Expired - Fee Related JP4565883B2 (ja) 2004-04-27 2004-04-27 半導体集積回路装置

Country Status (2)

Country Link
US (3) US7251162B2 (enExample)
JP (1) JP4565883B2 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
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US8391039B2 (en) * 2001-04-24 2013-03-05 Rambus Inc. Memory module with termination component
US6675272B2 (en) 2001-04-24 2004-01-06 Rambus Inc. Method and apparatus for coordinating memory operations among diversely-located memory components
JP4565883B2 (ja) * 2004-04-27 2010-10-20 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7301831B2 (en) 2004-09-15 2007-11-27 Rambus Inc. Memory systems with variable delays for write data signals
US20070070725A1 (en) 2005-09-29 2007-03-29 Hynix Semiconductor Inc. Internal voltage supplying device
KR101435966B1 (ko) * 2006-05-31 2014-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 상기 반도체 장치를 가진 ｉｃ 라벨, ｉｃ 태그, 및 ｉｃ 카드
KR100761371B1 (ko) 2006-06-29 2007-09-27 주식회사 하이닉스반도체 액티브 드라이버
JP2008052803A (ja) * 2006-08-23 2008-03-06 Toshiba Corp 不揮発性半導体記憶装置
KR100803363B1 (ko) 2006-11-13 2008-02-13 주식회사 하이닉스반도체 반도체 메모리 장치의 전압 생성 회로
KR100873617B1 (ko) 2007-04-12 2008-12-12 주식회사 하이닉스반도체 반도체 메모리 장치의 액티브 드라이버 제어 회로
JP4890369B2 (ja) * 2007-07-10 2012-03-07 エルピーダメモリ株式会社 デューティ検知回路及びこれを用いたｄｌｌ回路、半導体記憶装置、並びに、データ処理システム
KR100884605B1 (ko) 2007-09-17 2009-02-19 주식회사 하이닉스반도체 반도체 메모리 소자
KR100915816B1 (ko) 2007-10-04 2009-09-07 주식회사 하이닉스반도체 내부 전압 생성 회로
KR101003140B1 (ko) 2009-03-20 2010-12-21 주식회사 하이닉스반도체 내부 전원 발생 장치와 그의 제어 방법
JP5522168B2 (ja) * 2009-06-26 2014-06-18 パナソニック株式会社 電子部品とその故障検知方法
JP5328525B2 (ja) * 2009-07-02 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置
KR101097444B1 (ko) 2009-12-29 2011-12-23 주식회사 하이닉스반도체 내부전압 생성회로 및 내부전압 생성방법
JP5691615B2 (ja) * 2011-02-21 2015-04-01 ソニー株式会社 信号処理装置、信号処理方法、および受信装置
US8587363B2 (en) * 2012-01-20 2013-11-19 Samsung Electro-Mechanics Co., Ltd. High frequency switching circuit reducing power consumption and method of controlling the same
US9214859B2 (en) * 2012-04-30 2015-12-15 Macronix International Co., Ltd. Charge pump system
KR101950322B1 (ko) * 2012-12-11 2019-02-20 에스케이하이닉스 주식회사 전압 생성회로
US9401622B2 (en) * 2013-07-23 2016-07-26 Qualcomm Incorporated Systems and methods for extending the power capability of a wireless charger
US9490653B2 (en) 2013-07-23 2016-11-08 Qualcomm Incorporated Systems and methods for enabling a universal back-cover wireless charging solution
JP5905547B1 (ja) * 2014-09-05 2016-04-20 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US9536575B2 (en) 2015-01-14 2017-01-03 Macronix International Co., Ltd. Power source for memory circuitry
US9881654B2 (en) 2015-01-14 2018-01-30 Macronix International Co., Ltd. Power source for memory circuitry
KR20170034578A (ko) * 2015-09-21 2017-03-29 에스케이하이닉스 주식회사 레귤레이터, 이를 포함하는 메모리 시스템 및 이의 동작 방법
US10283207B2 (en) 2016-06-03 2019-05-07 Samsung Electronics Co., Ltd. Non-volatile memory devices comprising high voltage generation circuits and operating methods thereof
CN113223568B (zh) * 2021-05-17 2022-04-22 杭州雄迈集成电路技术股份有限公司 一种锁存结构和锁存方法
TWI835671B (zh) * 2023-06-17 2024-03-11 瑞昱半導體股份有限公司 記憶體時脈控制電路和控制記憶體時脈的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04222455A (ja) * 1990-12-20 1992-08-12 Nec Corp インタフェース回路
JPH06223588A (ja) * 1993-01-22 1994-08-12 Toshiba Corp 不揮発性半導体メモリ
JP3497601B2 (ja) * 1995-04-17 2004-02-16 松下電器産業株式会社 半導体集積回路
US6335893B1 (en) * 1997-06-16 2002-01-01 Hitachi, Ltd. Semiconductor integrated circuit device
US6338342B1 (en) * 1999-02-22 2002-01-15 Cabot Safety Intermediate Corporation Respirator headpiece and release mechanism
JP3476384B2 (ja) 1999-07-08 2003-12-10 Ｎｅｃマイクロシステム株式会社 昇圧回路とその制御方法
US6853582B1 (en) 2000-08-30 2005-02-08 Renesas Technology Corp. Nonvolatile memory with controlled voltage boosting speed
JP4055103B2 (ja) 2000-10-02 2008-03-05 株式会社ルネサステクノロジ 不揮発性メモリおよびそれを内蔵した半導体集積回路並びに不揮発性メモリの書込み方法
DE60134115D1 (de) * 2001-02-06 2008-07-03 St Microelectronics Srl Ladungspumpe für einen nichtflüchtigen Speicher mit Lesespannungsregelung in der Gegenwart von Schräglauf von Adressen, und nichtflüchtiger Speicher mit solcher Ladungspumpe
JP3566950B2 (ja) * 2002-02-20 2004-09-15 ローム株式会社 昇圧回路を備えた半導体装置
US6888399B2 (en) 2002-02-08 2005-05-03 Rohm Co., Ltd. Semiconductor device equipped with a voltage step-up circuit
JP4007494B2 (ja) * 2002-05-29 2007-11-14 シャープ株式会社 昇圧装置
JP4565883B2 (ja) * 2004-04-27 2010-10-20 ルネサスエレクトロニクス株式会社 半導体集積回路装置

Also Published As

Publication number Publication date
US20080279011A1 (en) 2008-11-13
US7411831B2 (en) 2008-08-12
US20070247920A1 (en) 2007-10-25
US7251162B2 (en) 2007-07-31
US7652924B2 (en) 2010-01-26
JP2005318034A (ja) 2005-11-10
US20050237825A1 (en) 2005-10-27

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