JP4525892B2 - Soiウェーハの製造方法 - Google Patents
Soiウェーハの製造方法 Download PDFInfo
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- JP4525892B2 JP4525892B2 JP2003294645A JP2003294645A JP4525892B2 JP 4525892 B2 JP4525892 B2 JP 4525892B2 JP 2003294645 A JP2003294645 A JP 2003294645A JP 2003294645 A JP2003294645 A JP 2003294645A JP 4525892 B2 JP4525892 B2 JP 4525892B2
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- Prior art keywords
- wafer
- oxide film
- single crystal
- silicon single
- soi
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000013078 crystal Substances 0.000 claims description 83
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 81
- 229910052710 silicon Inorganic materials 0.000 claims description 81
- 239000010703 silicon Substances 0.000 claims description 81
- 239000003870 refractory metal Substances 0.000 claims description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 49
- 229910044991 metal oxide Inorganic materials 0.000 claims description 31
- 150000004706 metal oxides Chemical class 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 29
- 229910052719 titanium Inorganic materials 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 6
- 239000010408 film Substances 0.000 claims 16
- 239000012528 membrane Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 149
- 239000010410 layer Substances 0.000 description 57
- 239000010936 titanium Substances 0.000 description 19
- 239000012535 impurity Substances 0.000 description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000005247 gettering Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- -1 oxygen ions Chemical class 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 102100031920 Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Human genes 0.000 description 1
- 101000992065 Homo sapiens Dihydrolipoyllysine-residue succinyltransferase component of 2-oxoglutarate dehydrogenase complex, mitochondrial Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000009614 chemical analysis method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005441 electronic device fabrication Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Description
(実施例1〜3及び比較例1)
Claims (5)
- 第1のシリコン単結晶ウェーハの表面に高融点金属膜を形成する工程と、第2のシリコン単結晶ウェーハの表面にシリコン酸化膜を形成する工程と、前記高融点金属膜と前記シリコン酸化膜を介して前記第1のシリコン単結晶ウェーハと前記第2のシリコン単結晶ウェーハとを貼り合わせて貼り合わせウェーハを形成する工程と、前記貼り合わせウェーハの前記第2のシリコン単結晶ウェーハを薄膜化してSOI層を形成する工程とを有することを特徴とするSOIウェーハの製造方法。
- 第1のシリコン単結晶ウェーハの表面に高融点金属膜を形成する工程と、前記高融点金属膜の表面に高融点金属酸化膜をさらに形成する工程と、第2のシリコン単結晶ウェーハの表面にシリコン酸化膜を形成する工程と、該高融点金属酸化膜と前記シリコン酸化膜を介して前記第1のシリコン単結晶ウェーハと前記第2のシリコン単結晶ウェーハとを貼り合わせて貼り合わせウェーハを形成する工程と、前記貼り合わせウェーハの前記第2のシリコン単結晶ウェーハを薄膜化してSOI層を形成する工程とを有することを特徴とするSOIウェーハの製造方法。
- 前記高融点金属膜がTi,Ta,V,Pd,Zr,及びWからなる群から選択された1種又は2種以上の金属の膜であることを特徴とする請求項1または2に記載されたSOIウェーハの製造方法。
- 第1のシリコン単結晶ウェーハの表面に高融点金属酸化膜を形成する工程と、第2のシリコン単結晶ウェーハの表面にシリコン酸化膜を形成する工程と、前記高融点金属酸化膜と前記シリコン酸化膜を介して前記第1のシリコン単結晶ウェーハと前記第2のシリコン単結晶ウェーハとを貼り合わせて貼り合わせウェーハを形成する工程と、前記貼り合わせウェーハの前記第2のシリコン単結晶ウェーハを薄膜化してSOI層を形成する工程とを有することを特徴とするSOIウェーハの製造方法。
- 前記高融点金属酸化膜がTi,Ta,V,Pd,Zr,及びWからなる群から選択された1種又は2種以上の金属の酸化膜であることを特徴とする請求項2〜4のいずれか1項に記載されたSOIウェーハの製造方法。
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JP2003294645A JP4525892B2 (ja) | 2003-08-18 | 2003-08-18 | Soiウェーハの製造方法 |
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JP2003294645A JP4525892B2 (ja) | 2003-08-18 | 2003-08-18 | Soiウェーハの製造方法 |
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JP2005064340A JP2005064340A (ja) | 2005-03-10 |
JP4525892B2 true JP4525892B2 (ja) | 2010-08-18 |
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JP6236753B2 (ja) * | 2012-06-28 | 2017-11-29 | 株式会社豊田自動織機 | 半導体基板の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09326396A (ja) * | 1996-06-04 | 1997-12-16 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH11307471A (ja) * | 1998-04-22 | 1999-11-05 | Mitsubishi Materials Silicon Corp | Soi基板の製造方法 |
JP2002313795A (ja) * | 2001-04-18 | 2002-10-25 | Shin Etsu Handotai Co Ltd | 高融点金属膜付シリコン単結晶ウェーハ及びその製造方法並びにシリコン単結晶中の不純物ゲッタリング方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09326396A (ja) * | 1996-06-04 | 1997-12-16 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH11307471A (ja) * | 1998-04-22 | 1999-11-05 | Mitsubishi Materials Silicon Corp | Soi基板の製造方法 |
JP2002313795A (ja) * | 2001-04-18 | 2002-10-25 | Shin Etsu Handotai Co Ltd | 高融点金属膜付シリコン単結晶ウェーハ及びその製造方法並びにシリコン単結晶中の不純物ゲッタリング方法 |
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