JP4521240B2 - 欠陥観察方法及びその装置 - Google Patents

欠陥観察方法及びその装置 Download PDF

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Publication number
JP4521240B2
JP4521240B2 JP2004274334A JP2004274334A JP4521240B2 JP 4521240 B2 JP4521240 B2 JP 4521240B2 JP 2004274334 A JP2004274334 A JP 2004274334A JP 2004274334 A JP2004274334 A JP 2004274334A JP 4521240 B2 JP4521240 B2 JP 4521240B2
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Japan
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defect
detected
sample
light
position information
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JP2004274334A
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Japanese (ja)
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JP2005156537A (ja
JP2005156537A5 (https=
Inventor
幸雄 宇都
稔 野口
良正 大島
利栄 黒▲崎▼
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Length Measuring Devices By Optical Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2004274334A 2003-10-31 2004-09-22 欠陥観察方法及びその装置 Expired - Fee Related JP4521240B2 (ja)

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JP2004274334A JP4521240B2 (ja) 2003-10-31 2004-09-22 欠陥観察方法及びその装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003371496 2003-10-31
JP2004274334A JP4521240B2 (ja) 2003-10-31 2004-09-22 欠陥観察方法及びその装置

Publications (3)

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JP2005156537A JP2005156537A (ja) 2005-06-16
JP2005156537A5 JP2005156537A5 (https=) 2007-05-17
JP4521240B2 true JP4521240B2 (ja) 2010-08-11

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JP2004274334A Expired - Fee Related JP4521240B2 (ja) 2003-10-31 2004-09-22 欠陥観察方法及びその装置

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Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4988223B2 (ja) * 2005-06-22 2012-08-01 株式会社日立ハイテクノロジーズ 欠陥検査装置およびその方法
JP2007071803A (ja) * 2005-09-09 2007-03-22 Hitachi High-Technologies Corp 欠陥観察方法及びその装置
JP4996856B2 (ja) 2006-01-23 2012-08-08 株式会社日立ハイテクノロジーズ 欠陥検査装置およびその方法
US20070211241A1 (en) 2006-02-24 2007-09-13 Noriyuki Aizawa Optical defect inspection apparatus
US8577119B2 (en) 2006-02-24 2013-11-05 Hitachi High-Technologies Corporation Wafer surface observing method and apparatus
JP4668809B2 (ja) * 2006-02-24 2011-04-13 株式会社日立ハイテクノロジーズ 表面検査装置
JP4979246B2 (ja) * 2006-03-03 2012-07-18 株式会社日立ハイテクノロジーズ 欠陥観察方法および装置
JP2007263884A (ja) * 2006-03-29 2007-10-11 Fujitsu Ltd 欠陥識別装置及び方法
US7433033B2 (en) * 2006-05-05 2008-10-07 Asml Netherlands B.V. Inspection method and apparatus using same
JP5283830B2 (ja) * 2006-06-13 2013-09-04 富士通セミコンダクター株式会社 欠陥検査方法
JP2008261790A (ja) 2007-04-13 2008-10-30 Hitachi High-Technologies Corp 欠陥検査装置
JP4664327B2 (ja) * 2007-05-16 2011-04-06 株式会社日立ハイテクノロジーズ パターン検査方法
JP5110977B2 (ja) 2007-06-22 2012-12-26 株式会社日立ハイテクノロジーズ 欠陥観察装置及びその方法
JP2011503526A (ja) * 2007-10-09 2011-01-27 ダンマークス テクニスク ユニバーシテット 半導体レーザと増幅器とに基づくコヒーレントライダーシステム
JP2013148349A (ja) * 2010-04-23 2013-08-01 Hitachi High-Technologies Corp レビュー方法、およびレビュー装置
JP5579588B2 (ja) * 2010-12-16 2014-08-27 株式会社日立ハイテクノロジーズ 欠陥観察方法及びその装置
JP5375896B2 (ja) * 2011-08-22 2013-12-25 富士通セミコンダクター株式会社 欠陥検査方法及び欠陥検査装置
US9097645B2 (en) * 2013-08-23 2015-08-04 Kla-Tencor Corporation Method and system for high speed height control of a substrate surface within a wafer inspection system
JP6320814B2 (ja) * 2014-03-20 2018-05-09 株式会社日立ハイテクサイエンス Ｘ線分析装置
KR101785069B1 (ko) 2015-03-27 2017-11-21 (주)오로스 테크놀로지 다크 필드 조명 장치
US10739275B2 (en) 2016-09-15 2020-08-11 Kla-Tencor Corporation Simultaneous multi-directional laser wafer inspection
JP6853760B2 (ja) * 2017-09-21 2021-03-31 東レエンジニアリング株式会社 ライトガイド照明装置
JP6954943B2 (ja) 2019-03-15 2021-10-27 日本電子株式会社 荷電粒子線装置
DE102021105946A1 (de) * 2021-03-11 2022-09-15 Asml Netherlands B.V. Messvorrichtung und Verfahren zur Rauheits- und/oder Defektmessung an einer Oberfläche
CN116879312A (zh) * 2023-05-31 2023-10-13 北京兆维科技开发有限公司 一种偏贴后自动外观检查设备远程复判的方法及系统
CN116973311B (zh) * 2023-09-22 2023-12-12 成都中嘉微视科技有限公司 一种膜上膜下异物的检测装置及检测方法
CN119147535B (zh) * 2024-11-13 2025-01-10 顺德职业技术学院 基于缺陷芯片的覆盖式轨迹检测装置及其检测方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115715U (ja) * 1982-02-02 1983-08-08 大日本印刷株式会社 空間周波数フイルタ
JPS6273141A (ja) * 1985-09-27 1987-04-03 Hitachi Ltd 透明な試料に対する欠陥検出方法及びその装置
JP2512878B2 (ja) * 1987-01-29 1996-07-03 株式会社ニコン 異物検査装置
JP2506725B2 (ja) * 1987-02-20 1996-06-12 三菱電機株式会社 パタ−ン欠陥検査装置
JPH0926397A (ja) * 1995-07-12 1997-01-28 Fujitsu Ltd 異物粒子の検出方法
US6122562A (en) * 1997-05-05 2000-09-19 Applied Materials, Inc. Method and apparatus for selectively marking a semiconductor wafer
JPH11326224A (ja) * 1998-03-15 1999-11-26 Omron Corp 検査方法及び検査装置
US6407373B1 (en) * 1999-06-15 2002-06-18 Applied Materials, Inc. Apparatus and method for reviewing defects on an object
JP2001083080A (ja) * 1999-09-13 2001-03-30 Hitachi Ltd 結晶欠陥計測装置
JP3802716B2 (ja) * 1999-09-17 2006-07-26 株式会社日立製作所 試料の検査方法及びその装置
JP4122735B2 (ja) * 2001-07-24 2008-07-23 株式会社日立製作所 半導体デバイスの検査方法および検査条件設定方法
JP4183492B2 (ja) * 2002-11-27 2008-11-19 株式会社日立製作所 欠陥検査装置および欠陥検査方法

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