JP4515077B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4515077B2
JP4515077B2 JP2003383293A JP2003383293A JP4515077B2 JP 4515077 B2 JP4515077 B2 JP 4515077B2 JP 2003383293 A JP2003383293 A JP 2003383293A JP 2003383293 A JP2003383293 A JP 2003383293A JP 4515077 B2 JP4515077 B2 JP 4515077B2
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Japan
Prior art keywords
layer
silicide
silicon
source
gate electrode
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Expired - Fee Related
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JP2003383293A
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Japanese (ja)
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JP2005150267A5 (enExample
JP2005150267A (ja
Inventor
輝雄 倉橋
寛 工藤
順子 長沼
厳和 築舘
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Fujitsu Ltd
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Fujitsu Ltd
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2003383293A 2003-11-13 2003-11-13 半導体装置の製造方法 Expired - Fee Related JP4515077B2 (ja)

Priority Applications (1)

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JP2003383293A JP4515077B2 (ja) 2003-11-13 2003-11-13 半導体装置の製造方法

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JP2003383293A JP4515077B2 (ja) 2003-11-13 2003-11-13 半導体装置の製造方法

Related Child Applications (2)

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JP2006280187A Division JP4744413B2 (ja) 2006-10-13 2006-10-13 半導体装置の製造方法
JP2009000315A Division JP4983810B2 (ja) 2009-01-05 2009-01-05 半導体装置の製造方法

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JP2005150267A JP2005150267A (ja) 2005-06-09
JP2005150267A5 JP2005150267A5 (enExample) 2006-10-12
JP4515077B2 true JP4515077B2 (ja) 2010-07-28

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7705405B2 (en) * 2004-07-06 2010-04-27 International Business Machines Corporation Methods for the formation of fully silicided metal gates
JP2007067225A (ja) * 2005-08-31 2007-03-15 Toshiba Corp 半導体装置およびその製造方法
WO2007026677A1 (ja) 2005-09-01 2007-03-08 Nec Corporation 半導体装置の製造方法
JP4864498B2 (ja) * 2006-03-15 2012-02-01 株式会社東芝 半導体装置およびその製造方法
JP2008016475A (ja) 2006-07-03 2008-01-24 Renesas Technology Corp 半導体装置
JP5222520B2 (ja) * 2007-10-11 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4635070B2 (ja) * 2008-03-28 2011-02-16 株式会社東芝 半導体装置
JP2009295931A (ja) * 2008-06-09 2009-12-17 Renesas Technology Corp 半導体装置および半導体装置の製造方法
JP2011119606A (ja) * 2009-12-07 2011-06-16 Sen Corp 半導体装置の製造方法
JP2012049286A (ja) * 2010-08-26 2012-03-08 Sen Corp 半導体装置の製造方法
JP5944285B2 (ja) * 2012-09-18 2016-07-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2017079272A (ja) * 2015-10-20 2017-04-27 株式会社東芝 固体撮像装置および固体撮像装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3023189B2 (ja) * 1991-03-28 2000-03-21 株式会社東芝 半導体装置の製造方法
US5352631A (en) * 1992-12-16 1994-10-04 Motorola, Inc. Method for forming a transistor having silicided regions
JP3485103B2 (ja) * 2001-04-19 2004-01-13 セイコーエプソン株式会社 Ｍｏｓ型トランジスタ及びその製造方法
KR20020083795A (ko) * 2001-04-30 2002-11-04 삼성전자 주식회사 자기정렬 실리사이드 기술을 사용하는 모스 트랜지스터의제조방법
JP2004273556A (ja) * 2003-03-05 2004-09-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

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