JP4508711B2 - 自己整列化ナノチャンネルアレイの製造方法及び自己整列化ナノチャンネルアレイを利用したナノドットの製造方法 - Google Patents
自己整列化ナノチャンネルアレイの製造方法及び自己整列化ナノチャンネルアレイを利用したナノドットの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims description 51
- 239000002090 nanochannel Substances 0.000 title claims description 47
- 239000002096 quantum dot Substances 0.000 title abstract description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims description 20
- 238000002048 anodisation reaction Methods 0.000 claims description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000007743 anodising Methods 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000748 compression moulding Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
- B29C2059/023—Microembossing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/026—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Micromachines (AREA)
- Carbon And Carbon Compounds (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
Stephen Y Chou、他,「Appl.Phys.Lett.」,1995年11月20日,第67巻,第21号 益田秀樹、他,「Appl.Phys.Lett.」,1997年11月10日,第71巻,第19号
まず、本発明の実施形態に係る、アルミニウム基板への自己整列化ナノチャンネルアレイの製造方法について説明する。
前記したナノチャンネルアレイは、本発明の実施形態に係るナノドットの製造方法における型板(template)として利用可能である。以下、本発明の実施形態に係る、自己整列化ナノチャンネルアレイを利用したナノドットの製造方法について説明する。
5 基板
6 マスク層
10 型板
11 アルミニウム基板
11a 凹溝
13 アルミナ層(第1アルミナ層)
13a チャンネル
14 アルミナ層(第2アルミナ層)
14a チャンネル
Claims (3)
- 1次陽極酸化によって、アルミニウム層を備えた型板に、多数のチャンネルからなるチャンネルアレイを有する第1アルミナ層を形成する工程と、
前記第1アルミナ層を所定深さにエッチングして、前記アルミニウム層に、前記第1アルミナ層の各チャンネルの底部に対応する多数の凹溝を形成する工程と、
2次陽極酸化によって、前記アルミニウム層に、前記多数の凹溝に対応する多数のチャンネルからなるチャンネルアレイを有する第2アルミナ層を形成する工程と、
加工対象層が形成された基板に、前記加工対象層を覆うマスク層を形成する工程と、
前記型板の前記第2アルミナ層を用いて前記マスク層を圧縮成形して、前記マスク層に前記第2アルミナ層の前記チャンネルアレイの形状を転写する工程と、
前記転写されたチャンネルアレイの形状を保ちながら、前記マスク層及び前記加工対象層をエッチングして、前記加工対象層に前記マスク層の圧縮成形された形状を形成する工程と、
を含むことを特徴とする自己整列化ナノチャンネルアレイを利用したナノドットの製造方法。 - 前記マスク層は、フォトレジストまたはポリメチルメタクリレート(PMMA)からなることを特徴とする請求項1に記載の自己整列化ナノチャンネルアレイを利用したナノドットの製造方法。
- 前記加工対象層は、シリコンからなることを特徴とする請求項1または請求項2に記載の自己整列化ナノチャンネルアレイを利用したナノドットの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020030025082A KR101190657B1 (ko) | 2003-04-21 | 2003-04-21 | 자기 정렬된 나노 채널-어레이의 제조방법 및 이를 이용한 나노 도트의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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JP2004323975A JP2004323975A (ja) | 2004-11-18 |
JP4508711B2 true JP4508711B2 (ja) | 2010-07-21 |
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JP2004123814A Expired - Fee Related JP4508711B2 (ja) | 2003-04-21 | 2004-04-20 | 自己整列化ナノチャンネルアレイの製造方法及び自己整列化ナノチャンネルアレイを利用したナノドットの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7282446B2 (ja) |
EP (1) | EP1470907B1 (ja) |
JP (1) | JP4508711B2 (ja) |
KR (1) | KR101190657B1 (ja) |
CN (1) | CN100456418C (ja) |
DE (1) | DE602004019162D1 (ja) |
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KR100611683B1 (ko) | 2005-03-24 | 2006-08-14 | 한국과학기술연구원 | 강유전체 나노 튜브 어레이 고밀도 기록 매체 |
US20060270201A1 (en) * | 2005-05-13 | 2006-11-30 | Chua Soo J | Nano-air-bridged lateral overgrowth of GaN semiconductor layer |
US20090214622A1 (en) * | 2005-11-25 | 2009-08-27 | Gerard Eddy Poinern | Nanoporous Membrane and Method of Preparation Thereof |
CN100529196C (zh) * | 2005-12-06 | 2009-08-19 | 四川大学 | 用于组装纳米-微米阵列材料的金属铝模板制备方法 |
US20100219079A1 (en) * | 2006-05-07 | 2010-09-02 | Synkera Technologies, Inc. | Methods for making membranes based on anodic aluminum oxide structures |
KR100856746B1 (ko) * | 2007-03-20 | 2008-09-04 | 명지대학교 산학협력단 | 티타니아 박막의 제조방법 |
KR101655382B1 (ko) * | 2009-10-09 | 2016-09-07 | 고려대학교 산학협력단 | 점진적 식각법 및 나노 임프린트기술을 이용하여 다양한 크기의 나노 패턴을 단일 기판에 제조하는 방법 |
JP5442479B2 (ja) * | 2010-02-05 | 2014-03-12 | 株式会社ワコム | 指示体、位置検出装置及び位置検出方法 |
JP2012048030A (ja) * | 2010-08-27 | 2012-03-08 | Kanagawa Acad Of Sci & Technol | 基板の製造方法 |
GB2502737A (en) * | 2011-01-27 | 2013-12-04 | Bottlenose Inc | Adaptive system architecture for identifying popular topics from messages |
CN102693900B (zh) * | 2012-05-31 | 2015-02-11 | 中国科学院上海微系统与信息技术研究所 | 一种具有周期结构的半导体及其制备方法 |
CN105026075B (zh) * | 2013-02-01 | 2018-04-17 | 特拉华空气喷射火箭达因公司 | 针对高温延展性和应力断裂寿命的增材制造 |
WO2014130453A1 (en) * | 2013-02-19 | 2014-08-28 | Alumiplate, Inc. | Methods for improving adhesion of aluminum films |
CN104349617B (zh) | 2013-07-30 | 2017-05-24 | 富泰华工业(深圳)有限公司 | 电子装置及其外壳的制造方法 |
CN104003354B (zh) * | 2014-06-18 | 2015-06-03 | 中山大学 | 一种铝纳米颗粒尺寸的调控方法及其应用 |
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- 2004-04-14 EP EP04252172A patent/EP1470907B1/en not_active Expired - Fee Related
- 2004-04-14 DE DE602004019162T patent/DE602004019162D1/de not_active Expired - Lifetime
- 2004-04-20 JP JP2004123814A patent/JP4508711B2/ja not_active Expired - Fee Related
- 2004-04-21 CN CNB2004100368429A patent/CN100456418C/zh not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
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EP1470907A2 (en) | 2004-10-27 |
CN1540714A (zh) | 2004-10-27 |
US20080257861A1 (en) | 2008-10-23 |
KR20040091291A (ko) | 2004-10-28 |
EP1470907B1 (en) | 2009-01-21 |
US7901586B2 (en) | 2011-03-08 |
EP1470907A3 (en) | 2005-12-14 |
CN100456418C (zh) | 2009-01-28 |
JP2004323975A (ja) | 2004-11-18 |
KR101190657B1 (ko) | 2012-10-15 |
US20070207619A1 (en) | 2007-09-06 |
US7282446B2 (en) | 2007-10-16 |
DE602004019162D1 (de) | 2009-03-12 |
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