JP4507636B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP4507636B2
JP4507636B2 JP2004051627A JP2004051627A JP4507636B2 JP 4507636 B2 JP4507636 B2 JP 4507636B2 JP 2004051627 A JP2004051627 A JP 2004051627A JP 2004051627 A JP2004051627 A JP 2004051627A JP 4507636 B2 JP4507636 B2 JP 4507636B2
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Prior art keywords
light emitting
semiconductor light
refractive index
phosphor
emitting device
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JP2004051627A
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Japanese (ja)
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JP2005057239A5 (https=
JP2005057239A (ja
Inventor
将嗣 市川
寛人 玉置
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Nichia Corp
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Nichia Corp
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JP2004051627A 2003-03-27 2004-02-26 半導体発光素子 Expired - Fee Related JP4507636B2 (ja)

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JP2004051627A JP4507636B2 (ja) 2003-03-27 2004-02-26 半導体発光素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003087602 2003-03-27
JP2003277168 2003-07-18
JP2004051627A JP4507636B2 (ja) 2003-03-27 2004-02-26 半導体発光素子

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JP2005057239A JP2005057239A (ja) 2005-03-03
JP2005057239A5 JP2005057239A5 (https=) 2007-04-12
JP4507636B2 true JP4507636B2 (ja) 2010-07-21

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101901835B1 (ko) * 2011-11-10 2018-09-27 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 장치

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KR101047683B1 (ko) 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
JP2006332202A (ja) * 2005-05-24 2006-12-07 Mitsubishi Chemicals Corp 発光装置、発光装置の製造方法、及びそれを用いた照明装置、画像表示装置用バックライト並びに画像表示装置
JP4670489B2 (ja) * 2005-06-06 2011-04-13 日立電線株式会社 発光ダイオード及びその製造方法
KR100723233B1 (ko) * 2006-03-31 2007-05-29 삼성전기주식회사 백색 발광 소자
WO2008044759A1 (en) * 2006-10-12 2008-04-17 Panasonic Corporation Light-emitting device and method for manufacturing the same
KR101259997B1 (ko) * 2006-11-06 2013-05-06 서울옵토디바이스주식회사 선택적 파장변환층을 갖는 발광 다이오드 및 그것을제조하는 방법
JP5045336B2 (ja) * 2007-04-16 2012-10-10 豊田合成株式会社 半導体発光素子
US9024340B2 (en) 2007-11-29 2015-05-05 Nichia Corporation Light emitting apparatus and method for producing the same
KR101445878B1 (ko) 2008-04-04 2014-09-29 삼성전자주식회사 보호 필름 및 이를 포함하는 봉지 재료
TWI456785B (zh) * 2008-07-10 2014-10-11 Mitsui Chemicals Inc 記錄折射率調變之薄膜
JP4555880B2 (ja) * 2008-09-04 2010-10-06 株式会社沖データ 積層半導体発光装置及び画像形成装置
KR100993045B1 (ko) * 2009-10-23 2010-11-08 엘지이노텍 주식회사 발광소자 칩 및 발광소자 패키지
US7994531B2 (en) * 2009-04-02 2011-08-09 Visera Technologies Company Limited White-light light emitting diode chips and fabrication methods thereof
JPWO2011077547A1 (ja) * 2009-12-25 2013-05-02 コニカミノルタアドバンストレイヤー株式会社 発光装置
US8643051B2 (en) 2009-12-25 2014-02-04 Konica Minolta Advanced Layers, Inc. Light emission device
WO2011096074A1 (ja) * 2010-02-08 2011-08-11 コニカミノルタオプト株式会社 発光装置
WO2011145794A1 (ko) 2010-05-18 2011-11-24 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법
KR101744971B1 (ko) * 2010-06-28 2017-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
US9112123B2 (en) 2010-10-29 2015-08-18 National Institute For Materials Science Light-emitting device
DE102011100728A1 (de) 2011-05-06 2012-11-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
KR101844871B1 (ko) * 2011-06-22 2018-04-05 인제대학교 산학협력단 광효율이 향상된 발광 다이오드 및 그 제조 방법
US9634190B2 (en) 2013-03-15 2017-04-25 National Institute Of Advanced Industrial Science And Technology White light-emitting element
JP6466653B2 (ja) * 2013-05-17 2019-02-06 スタンレー電気株式会社 窒化物半導体発光素子、および窒化物半導体ウェーハ
SG10201800517XA (en) 2013-07-19 2018-02-27 Az Electronic Mat Luxembourg Sarl Encapsulation material for light emitting diodes
KR102320865B1 (ko) * 2015-03-05 2021-11-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
KR101766588B1 (ko) 2016-07-01 2017-08-08 고려대학교 산학협력단 수직형 발광다이오드 소자 및 이의 제조방법
KR101933761B1 (ko) * 2016-07-01 2018-12-28 고려대학교 산학협력단 수평형 발광다이오드 소자 및 이의 제조방법

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Publication number Priority date Publication date Assignee Title
JPS6430277A (en) * 1987-07-27 1989-02-01 Hitachi Ltd Light convergent type light-emitting device
JPH11340558A (ja) * 1998-05-21 1999-12-10 Nec Corp リッジ導波路型半導体レーザ及びその製造方法
JP3665243B2 (ja) * 1999-11-19 2005-06-29 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
JP4770058B2 (ja) * 2000-05-17 2011-09-07 日亜化学工業株式会社 発光素子及び装置
JP4017330B2 (ja) * 2000-09-22 2007-12-05 独立行政法人科学技術振興機構 光学複合体膜とその製造方法ならびにその光学複合体膜を備えた光素子
JP2003014966A (ja) * 2001-07-03 2003-01-15 Tokuyama Corp 光導波路の製造方法
JP4415572B2 (ja) * 2003-06-05 2010-02-17 日亜化学工業株式会社 半導体発光素子およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101901835B1 (ko) * 2011-11-10 2018-09-27 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 장치

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