JP4497165B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4497165B2 JP4497165B2 JP2007025940A JP2007025940A JP4497165B2 JP 4497165 B2 JP4497165 B2 JP 4497165B2 JP 2007025940 A JP2007025940 A JP 2007025940A JP 2007025940 A JP2007025940 A JP 2007025940A JP 4497165 B2 JP4497165 B2 JP 4497165B2
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- Prior art keywords
- resistor
- temperature
- semiconductor device
- single crystal
- resistance
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- 239000004065 semiconductor Substances 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000012535 impurity Substances 0.000 claims description 113
- 238000010438 heat treatment Methods 0.000 claims description 54
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 42
- 238000001514 detection method Methods 0.000 claims description 39
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 29
- 229910052698 phosphorus Inorganic materials 0.000 claims description 29
- 239000011574 phosphorus Substances 0.000 claims description 29
- 239000012530 fluid Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000002513 implantation Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 2
- 230000008859 change Effects 0.000 description 55
- 238000009792 diffusion process Methods 0.000 description 32
- 239000010410 layer Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000011144 upstream manufacturing Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 230000002123 temporal effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
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- 239000004575 stone Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6845—Micromachined devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measuring Volume Flow (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
図2は、本発明の第1実施形態に係る半導体装置の概略構成を示す平面図である。図3は、図2のIII-III線に沿う断面図である。図2においては、便宜上、発熱体、感温体、及び繋ぎ配線上の層間絶縁膜や保護膜を省略して図示している。また、図2に示す白抜き矢印は、流体の流れ方向を示している。
次に、本発明の第2実施形態を、図9に基づいて説明する。図9は、第2実施形態に係る半導体装置の、抵抗変化率を示す図である。
次に、本発明の第3実施形態を、図10に基づいて説明する。図10は、第3実施形態に係る半導体装置の概略構成を示す模式的な平面図である。
110・・・半導体基板(基板)
111・・・空洞部
120・・・絶縁層
130・・・流量検出部
131,132・・・発熱体
133,134・・・感温体
135・・・繋ぎ配線部
160・・・単結晶シリコン
161・・・抵抗体
180・・・検出部
Claims (4)
- 基板上に、半導体からなる抵抗温度係数2000ppm/℃以上の抵抗体が形成された半導体装置の製造方法であって、
前記抵抗体を形成する工程として、
前記基板としての半導体基板上に、絶縁層を介して積層された単結晶シリコンに対して、前記抵抗体の不純物濃度が7×1019cm−3以上、1×1020cm−3未満の範囲内となるように、不純物としてのリンをイオン注入する注入工程と、
前記注入工程後、深さ方向において前記単結晶シリコンの不純物濃度が均一となるように熱処理を実施して前記リンを拡散させ、前記抵抗体とする熱処理工程と、を含むことを特徴とする半導体装置の製造方法。 - 前記半導体装置が、流体の流量を検出する流量検出部を有し、
前記熱処理工程後、前記抵抗体をパターニングして、前記流量検出部を構成する発熱体及び前記発熱体の近傍の温度を感知する感温体を形成することを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記熱処理工程では、1000℃にて2時間の熱処理を実施することを特徴とする請求項1又は請求項2に記載の半導体装置の製造方法。
- 前記抵抗体の最高温度が、310℃以上であることを特徴とする請求項1〜3いずれか1項に記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007025940A JP4497165B2 (ja) | 2007-02-05 | 2007-02-05 | 半導体装置の製造方法 |
US12/007,720 US7670918B2 (en) | 2007-02-05 | 2008-01-15 | Semiconductor device having impurity-doped resistor element |
DE102008007222.2A DE102008007222B4 (de) | 2007-02-05 | 2008-02-01 | Halbleitervorrichtung mit Störstellen dotiertem Widerstandselement |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007025940A JP4497165B2 (ja) | 2007-02-05 | 2007-02-05 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008192839A JP2008192839A (ja) | 2008-08-21 |
JP4497165B2 true JP4497165B2 (ja) | 2010-07-07 |
Family
ID=39587551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007025940A Expired - Fee Related JP4497165B2 (ja) | 2007-02-05 | 2007-02-05 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7670918B2 (ja) |
JP (1) | JP4497165B2 (ja) |
DE (1) | DE102008007222B4 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011128080A (ja) | 2009-12-18 | 2011-06-30 | Denso Corp | 空気流量測定装置 |
US8356514B2 (en) * | 2011-01-13 | 2013-01-22 | Honeywell International Inc. | Sensor with improved thermal stability |
DE102011110882A1 (de) * | 2011-08-17 | 2013-02-21 | Sensus Spectrum Llc | Thermischer Durchflusssensor |
CN105493234B (zh) * | 2013-09-27 | 2019-08-27 | 英特尔公司 | 为嵌入式电阻器形成可调温度系数的方法 |
DE102016206549A1 (de) * | 2016-04-19 | 2017-10-19 | Robert Bosch Gmbh | Sensorelement für thermische Anemometrie |
JP6661678B2 (ja) * | 2018-02-23 | 2020-03-11 | 三菱電機株式会社 | 熱式検出センサ |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001012985A (ja) * | 1999-06-28 | 2001-01-19 | Hitachi Ltd | 熱式空気流量センサ及び内燃機関制御装置 |
JP2001194202A (ja) * | 2000-01-14 | 2001-07-19 | Hitachi Ltd | 熱式空気流量センサおよび内燃機関制御装置 |
JP2003337056A (ja) * | 2002-05-17 | 2003-11-28 | Hitachi Ltd | 発熱抵抗式空気流量測定装置 |
JP2004219080A (ja) * | 2003-01-09 | 2004-08-05 | Denso Corp | 半導体センサ及びその製造方法 |
JP2004241398A (ja) * | 2002-12-13 | 2004-08-26 | Denso Corp | 半導体センサ及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4685331A (en) * | 1985-04-10 | 1987-08-11 | Innovus | Thermal mass flowmeter and controller |
JPS63258060A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 半導体記憶装置 |
CN1187800C (zh) * | 1997-04-03 | 2005-02-02 | 株式会社山武 | 电路板以及检测器及其制造方法 |
FR2817399B1 (fr) * | 2000-11-30 | 2003-10-31 | St Microelectronics Sa | Puce electronique multifonctions |
JP3698679B2 (ja) * | 2002-03-27 | 2005-09-21 | 株式会社日立製作所 | ガス流量計及びその製造方法 |
JP2004205498A (ja) * | 2002-12-13 | 2004-07-22 | Denso Corp | フローセンサ |
US6983653B2 (en) * | 2002-12-13 | 2006-01-10 | Denso Corporation | Flow sensor having thin film portion and method for manufacturing the same |
JP4292026B2 (ja) * | 2003-05-30 | 2009-07-08 | 株式会社日立製作所 | 熱式流量センサ |
JP2005003468A (ja) | 2003-06-11 | 2005-01-06 | Yokogawa Electric Corp | フローセンサ |
-
2007
- 2007-02-05 JP JP2007025940A patent/JP4497165B2/ja not_active Expired - Fee Related
-
2008
- 2008-01-15 US US12/007,720 patent/US7670918B2/en active Active
- 2008-02-01 DE DE102008007222.2A patent/DE102008007222B4/de not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001012985A (ja) * | 1999-06-28 | 2001-01-19 | Hitachi Ltd | 熱式空気流量センサ及び内燃機関制御装置 |
JP2001194202A (ja) * | 2000-01-14 | 2001-07-19 | Hitachi Ltd | 熱式空気流量センサおよび内燃機関制御装置 |
JP2003337056A (ja) * | 2002-05-17 | 2003-11-28 | Hitachi Ltd | 発熱抵抗式空気流量測定装置 |
JP2004241398A (ja) * | 2002-12-13 | 2004-08-26 | Denso Corp | 半導体センサ及びその製造方法 |
JP2004219080A (ja) * | 2003-01-09 | 2004-08-05 | Denso Corp | 半導体センサ及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2008192839A (ja) | 2008-08-21 |
DE102008007222A1 (de) | 2008-08-07 |
US20080188027A1 (en) | 2008-08-07 |
US7670918B2 (en) | 2010-03-02 |
DE102008007222B4 (de) | 2014-03-13 |
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