JP4487712B2 - 発光ダイオードの製造方法 - Google Patents

発光ダイオードの製造方法 Download PDF

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Publication number
JP4487712B2
JP4487712B2 JP2004283262A JP2004283262A JP4487712B2 JP 4487712 B2 JP4487712 B2 JP 4487712B2 JP 2004283262 A JP2004283262 A JP 2004283262A JP 2004283262 A JP2004283262 A JP 2004283262A JP 4487712 B2 JP4487712 B2 JP 4487712B2
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Japan
Prior art keywords
layer
emitting diode
electrode
gas
light emitting
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Expired - Fee Related
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JP2004283262A
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Japanese (ja)
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JP2006100474A (ja
JP2006100474A5 (enrdf_load_stackoverflow
Inventor
瀧　　哲也
浩司 奥野
和樹 西島
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2004283262A priority Critical patent/JP4487712B2/ja
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Publication of JP2006100474A5 publication Critical patent/JP2006100474A5/ja
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Publication of JP4487712B2 publication Critical patent/JP4487712B2/ja
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  • Drying Of Semiconductors (AREA)
  • Led Devices (AREA)
JP2004283262A 2004-09-29 2004-09-29 発光ダイオードの製造方法 Expired - Fee Related JP4487712B2 (ja)

Priority Applications (1)

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JP2004283262A JP4487712B2 (ja) 2004-09-29 2004-09-29 発光ダイオードの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004283262A JP4487712B2 (ja) 2004-09-29 2004-09-29 発光ダイオードの製造方法

Publications (3)

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JP2006100474A JP2006100474A (ja) 2006-04-13
JP2006100474A5 JP2006100474A5 (enrdf_load_stackoverflow) 2007-03-15
JP4487712B2 true JP4487712B2 (ja) 2010-06-23

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JP2004283262A Expired - Fee Related JP4487712B2 (ja) 2004-09-29 2004-09-29 発光ダイオードの製造方法

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JP (1) JP4487712B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI497754B (zh) * 2012-01-12 2015-08-21 Univ Nat Formosa Methods for improving the luminous efficiency of light emitting diodes

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008226866A (ja) * 2007-02-13 2008-09-25 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤ素子および発光装置
JP5318353B2 (ja) * 2007-02-14 2013-10-16 三菱化学株式会社 ＧａＮ系ＬＥＤ素子および発光装置
KR100926280B1 (ko) 2007-12-14 2009-11-12 고려대학교 산학협력단 발광 효율 향상을 위한 질화물 발광 소자 및 그 제조 방법
WO2010020072A1 (en) * 2008-08-19 2010-02-25 Lattice Power (Jiangxi) Corporation Semiconductor light-emitting device with silicone protective layer
US8088633B2 (en) 2009-12-02 2012-01-03 Ultratech, Inc. Optical alignment methods for forming LEDs having a rough surface
KR101091504B1 (ko) 2010-02-12 2011-12-08 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 발광소자 제조방법
CN103258930B (zh) * 2013-05-09 2016-03-02 大连理工大学 一种GaN LED外延片结构及制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI497754B (zh) * 2012-01-12 2015-08-21 Univ Nat Formosa Methods for improving the luminous efficiency of light emitting diodes

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JP2006100474A (ja) 2006-04-13

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