JP4484440B2 - 撮像アレイ及びその製造方法 - Google Patents

撮像アレイ及びその製造方法 Download PDF

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Publication number
JP4484440B2
JP4484440B2 JP2003098710A JP2003098710A JP4484440B2 JP 4484440 B2 JP4484440 B2 JP 4484440B2 JP 2003098710 A JP2003098710 A JP 2003098710A JP 2003098710 A JP2003098710 A JP 2003098710A JP 4484440 B2 JP4484440 B2 JP 4484440B2
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Japan
Prior art keywords
dielectric layer
layer
capacitor
tft
radiation detector
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Expired - Lifetime
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JP2003098710A
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Japanese (ja)
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JP2004006780A5 (enExample
JP2004006780A (ja
Inventor
チー・アン・リー
ダグラス・アルバグリー
ジョージ・エドワード・ポッシン
チン−イウ・ウェイ
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General Electric Co
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General Electric Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
JP2003098710A 2002-04-03 2003-04-02 撮像アレイ及びその製造方法 Expired - Lifetime JP4484440B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/116,469 US6740884B2 (en) 2002-04-03 2002-04-03 Imaging array and methods for fabricating same

Publications (3)

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JP2004006780A JP2004006780A (ja) 2004-01-08
JP2004006780A5 JP2004006780A5 (enExample) 2006-05-18
JP4484440B2 true JP4484440B2 (ja) 2010-06-16

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Family Applications (1)

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JP2003098710A Expired - Lifetime JP4484440B2 (ja) 2002-04-03 2003-04-02 撮像アレイ及びその製造方法

Country Status (4)

Country Link
US (1) US6740884B2 (enExample)
EP (1) EP1353382A3 (enExample)
JP (1) JP4484440B2 (enExample)
KR (1) KR20030082379A (enExample)

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CN102664184B (zh) * 2012-03-27 2014-08-06 北京京东方光电科技有限公司 一种x射线检测装置的阵列基板的制造方法
CN102800750B (zh) * 2012-07-26 2015-07-01 北京京东方光电科技有限公司 一种传感器的制造方法
KR101965259B1 (ko) * 2012-07-27 2019-08-08 삼성디스플레이 주식회사 엑스선 검출기
TWI496277B (zh) * 2012-12-03 2015-08-11 Innocom Tech Shenzhen Co Ltd Ｘ光偵測裝置
CN103474474B (zh) * 2013-09-16 2016-08-17 北京京东方光电科技有限公司 Tft及其制作方法、阵列基板及其制作方法、x射线探测器
US9917133B2 (en) 2013-12-12 2018-03-13 General Electric Company Optoelectronic device with flexible substrate
US10732131B2 (en) 2014-03-13 2020-08-04 General Electric Company Curved digital X-ray detector for weld inspection
CN105304656B (zh) 2014-06-23 2018-06-22 上海箩箕技术有限公司 光电传感器
US9515106B2 (en) * 2014-08-15 2016-12-06 Perkinelmer Holdings, Inc. Radiation imaging device with metal-insulator-semiconductor photodetector and thin film transistor
KR102603411B1 (ko) * 2017-12-18 2023-11-16 엘지디스플레이 주식회사 마이크로led 표시장치
WO2020061823A1 (zh) * 2018-09-26 2020-04-02 深圳市汇顶科技股份有限公司 光学图像采集单元、光学图像采集装置和电子设备
CN110047859A (zh) * 2019-04-24 2019-07-23 北京京东方传感技术有限公司 传感器及其制备方法
US11846739B2 (en) * 2021-01-12 2023-12-19 Innocare Optoelectronics Corporation Circuit for sensing X-ray
CN113224100A (zh) * 2021-05-25 2021-08-06 信利半导体有限公司 一种非晶氧化物薄膜晶体管光学感应器及电子设备

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Also Published As

Publication number Publication date
US6740884B2 (en) 2004-05-25
JP2004006780A (ja) 2004-01-08
EP1353382A2 (en) 2003-10-15
KR20030082379A (ko) 2003-10-22
US20030189175A1 (en) 2003-10-09
EP1353382A3 (en) 2003-11-26

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