KR20030082379A - 방사선 검출기 - Google Patents
방사선 검출기 Download PDFInfo
- Publication number
- KR20030082379A KR20030082379A KR10-2003-0020676A KR20030020676A KR20030082379A KR 20030082379 A KR20030082379 A KR 20030082379A KR 20030020676 A KR20030020676 A KR 20030020676A KR 20030082379 A KR20030082379 A KR 20030082379A
- Authority
- KR
- South Korea
- Prior art keywords
- dielectric layer
- layer
- electrode
- diode
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims description 29
- 238000003384 imaging method Methods 0.000 title description 11
- 239000003990 capacitor Substances 0.000 claims abstract description 36
- 230000005855 radiation Effects 0.000 claims abstract description 25
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 104
- 238000004519 manufacturing process Methods 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000002161 passivation Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/116,469 US6740884B2 (en) | 2002-04-03 | 2002-04-03 | Imaging array and methods for fabricating same |
| US10/116,469 | 2002-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20030082379A true KR20030082379A (ko) | 2003-10-22 |
Family
ID=28453935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-0020676A Ceased KR20030082379A (ko) | 2002-04-03 | 2003-04-02 | 방사선 검출기 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6740884B2 (enExample) |
| EP (1) | EP1353382A3 (enExample) |
| JP (1) | JP4484440B2 (enExample) |
| KR (1) | KR20030082379A (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW544946B (en) * | 2002-07-12 | 2003-08-01 | Hannstar Display Corp | Manufacturing method of X-ray inspecting instrument array unit |
| US7145152B2 (en) * | 2003-10-14 | 2006-12-05 | General Electric Company | Storage capacitor design for a solid state imager |
| US6982176B2 (en) * | 2003-10-30 | 2006-01-03 | General Electric Company | Method for monitoring production of pixel detectors and detectors produced thereby |
| US7105828B2 (en) * | 2004-02-10 | 2006-09-12 | Ge Medical Systems Global Technology Company, Llc | Hybrid x-ray detector |
| US7521298B2 (en) * | 2006-11-25 | 2009-04-21 | Wintec Corporation | Thin film transistor array panel of active liquid crystal display and fabrication method thereof |
| JP5286691B2 (ja) | 2007-05-14 | 2013-09-11 | 三菱電機株式会社 | フォトセンサー |
| KR101218089B1 (ko) * | 2007-12-07 | 2013-01-18 | 엘지디스플레이 주식회사 | 디지털 엑스레이 디텍터 및 그 제조방법 |
| JP5570996B2 (ja) | 2007-12-14 | 2014-08-13 | エアロデザインズ インコーポレイテッド | エアロゾル化可能な食料品の送達 |
| US7902004B2 (en) * | 2008-10-14 | 2011-03-08 | Dpix Llc | ESD induced artifact reduction design for a thin film transistor image sensor array |
| JP2010205987A (ja) * | 2009-03-04 | 2010-09-16 | Sony Corp | 薄膜トランジスタおよびその製造方法並びに表示装置 |
| JP5402211B2 (ja) * | 2009-04-27 | 2014-01-29 | セイコーエプソン株式会社 | 光電変換装置の製造方法 |
| TWI424574B (zh) * | 2009-07-28 | 2014-01-21 | Prime View Int Co Ltd | 數位ｘ光探測面板及其製作方法 |
| KR101217808B1 (ko) | 2010-09-30 | 2013-01-21 | 주식회사 디알텍 | 방사선 검출기 및 방사선 검출 방법 |
| WO2012043908A1 (ko) * | 2010-09-30 | 2012-04-05 | (주)디알텍 | 방사선 검출기 및 방사선 검출 방법 |
| KR101322331B1 (ko) * | 2011-05-26 | 2013-10-28 | 전자부품연구원 | Ｘ-ｒａｙ 검출기용 박막 트랜지스터 어레이 기판 및 상기 기판에 구비된 박막 트랜지스터의 제조 방법 |
| US8878137B2 (en) * | 2011-10-13 | 2014-11-04 | Varian Medical Systems, Inc. | Photo detector of an X-ray imager |
| US20130240875A1 (en) * | 2012-03-14 | 2013-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN102629610A (zh) * | 2012-03-27 | 2012-08-08 | 北京京东方光电科技有限公司 | 一种x射线检测装置的阵列基板及其制造方法 |
| CN102664184B (zh) * | 2012-03-27 | 2014-08-06 | 北京京东方光电科技有限公司 | 一种x射线检测装置的阵列基板的制造方法 |
| CN102800750B (zh) * | 2012-07-26 | 2015-07-01 | 北京京东方光电科技有限公司 | 一种传感器的制造方法 |
| KR101965259B1 (ko) * | 2012-07-27 | 2019-08-08 | 삼성디스플레이 주식회사 | 엑스선 검출기 |
| TWI496277B (zh) * | 2012-12-03 | 2015-08-11 | Innocom Tech Shenzhen Co Ltd | Ｘ光偵測裝置 |
| CN103474474B (zh) | 2013-09-16 | 2016-08-17 | 北京京东方光电科技有限公司 | Tft及其制作方法、阵列基板及其制作方法、x射线探测器 |
| US9917133B2 (en) | 2013-12-12 | 2018-03-13 | General Electric Company | Optoelectronic device with flexible substrate |
| EP3117204B1 (en) | 2014-03-13 | 2021-06-16 | General Electric Company | Curved digital x-ray detector for weld inspection |
| CN105304656B (zh) | 2014-06-23 | 2018-06-22 | 上海箩箕技术有限公司 | 光电传感器 |
| US9515106B2 (en) | 2014-08-15 | 2016-12-06 | Perkinelmer Holdings, Inc. | Radiation imaging device with metal-insulator-semiconductor photodetector and thin film transistor |
| KR102603411B1 (ko) | 2017-12-18 | 2023-11-16 | 엘지디스플레이 주식회사 | 마이크로led 표시장치 |
| CN109417080A (zh) * | 2018-09-26 | 2019-03-01 | 深圳市汇顶科技股份有限公司 | 光学图像采集单元、光学图像采集装置和电子设备 |
| CN110047859A (zh) * | 2019-04-24 | 2019-07-23 | 北京京东方传感技术有限公司 | 传感器及其制备方法 |
| US11846739B2 (en) * | 2021-01-12 | 2023-12-19 | Innocare Optoelectronics Corporation | Circuit for sensing X-ray |
| CN113224100A (zh) * | 2021-05-25 | 2021-08-06 | 信利半导体有限公司 | 一种非晶氧化物薄膜晶体管光学感应器及电子设备 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4725890A (en) | 1986-07-15 | 1988-02-16 | Ovonic Imaging Systems, Inc. | Flexible array of photosensitive elements |
| US4739414A (en) | 1986-07-15 | 1988-04-19 | Ovonic Imaging Systems, Inc. | Large area array of thin film photosensitive elements for image detection |
| US4889983A (en) | 1987-11-24 | 1989-12-26 | Mitsubishi Denki Kabushiki Kaisha | Image sensor and production method thereof |
| US5196721A (en) * | 1989-10-03 | 1993-03-23 | Fuji Xerox Co., Ltd. | Image reading device |
| JPH0423470A (ja) | 1990-05-18 | 1992-01-27 | Fuji Xerox Co Ltd | イメージセンサ |
| GB9202693D0 (en) * | 1992-02-08 | 1992-03-25 | Philips Electronics Uk Ltd | A method of manufacturing a large area active matrix array |
| US5254480A (en) * | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
| GB9209734D0 (en) * | 1992-05-06 | 1992-06-17 | Philips Electronics Uk Ltd | An image sensor |
| JPH0772510A (ja) * | 1993-09-07 | 1995-03-17 | Hitachi Ltd | アクティブマトリクス型液晶表示装置 |
| US5399884A (en) | 1993-11-10 | 1995-03-21 | General Electric Company | Radiation imager with single passivation dielectric for transistor and diode |
| US5587591A (en) * | 1993-12-29 | 1996-12-24 | General Electric Company | Solid state fluoroscopic radiation imager with thin film transistor addressable array |
| US5435608A (en) | 1994-06-17 | 1995-07-25 | General Electric Company | Radiation imager with common passivation dielectric for gate electrode and photosensor |
| US5517031A (en) * | 1994-06-21 | 1996-05-14 | General Electric Company | Solid state imager with opaque layer |
| CA2193649C (en) * | 1994-07-27 | 2003-01-21 | Zhong Shou Huang | Radiation imaging panel |
| US5532180A (en) | 1995-06-02 | 1996-07-02 | Ois Optical Imaging Systems, Inc. | Method of fabricating a TFT with reduced channel length |
| US5614727A (en) * | 1995-06-06 | 1997-03-25 | International Business Machines Corporation | Thin film diode having large current capability with low turn-on voltages for integrated devices |
| US6124606A (en) * | 1995-06-06 | 2000-09-26 | Ois Optical Imaging Systems, Inc. | Method of making a large area imager with improved signal-to-noise ratio |
| US5631473A (en) * | 1995-06-21 | 1997-05-20 | General Electric Company | Solid state array with supplemental dielectric layer crossover structure |
| EP0762505A3 (en) * | 1995-08-28 | 1999-02-03 | Canon Kabushiki Kaisha | Apparatus for detecting radiation and method for manufacturing such apparatus |
| US5610404A (en) * | 1995-09-05 | 1997-03-11 | General Electric Company | Flat panel imaging device with ground plane electrode |
| US5610403A (en) * | 1995-09-05 | 1997-03-11 | General Electric Company | Solid state radiation imager with gate electrode plane shield wires |
| KR100205388B1 (ko) * | 1995-09-12 | 1999-07-01 | 구자홍 | 액정표시장치 및 그 제조방법 |
| US5648654A (en) * | 1995-12-21 | 1997-07-15 | General Electric Company | Flat panel imaging device with patterned common electrode |
| US5777355A (en) * | 1996-12-23 | 1998-07-07 | General Electric Company | Radiation imager with discontinuous dielectric |
| US5920070A (en) * | 1996-11-27 | 1999-07-06 | General Electric Company | Solid state area x-ray detector with adjustable bias |
| JP3729953B2 (ja) * | 1996-12-02 | 2005-12-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Ｔｆｔアレイ基板とその製法 |
| US5838054A (en) * | 1996-12-23 | 1998-11-17 | General Electric Company | Contact pads for radiation imagers |
| US5736732A (en) * | 1996-12-23 | 1998-04-07 | General Electric Company | Induced charge prevention in semiconductor imaging devices |
| JP3784491B2 (ja) * | 1997-03-28 | 2006-06-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
| US6167110A (en) * | 1997-11-03 | 2000-12-26 | General Electric Company | High voltage x-ray and conventional radiography imaging apparatus and method |
| US6031234A (en) * | 1997-12-08 | 2000-02-29 | General Electric Company | High resolution radiation imager |
| US6025599A (en) * | 1997-12-09 | 2000-02-15 | Direct Radiography Corp. | Image capture element |
| US6060714A (en) * | 1998-01-23 | 2000-05-09 | Ois Optical Imaging Systems, Inc. | Large area imager with photo-imageable interface barrier layer |
| US5917199A (en) * | 1998-05-15 | 1999-06-29 | Ois Optical Imaging Systems, Inc. | Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same |
| US6075248A (en) * | 1998-10-22 | 2000-06-13 | Direct Radiography Corp. | Direct radiographic imaging panel with shielding electrode |
| US6243441B1 (en) * | 1999-07-13 | 2001-06-05 | Edge Medical Devices | Active matrix detector for X-ray imaging |
| GB9929615D0 (en) | 1999-12-15 | 2000-02-09 | Koninkl Philips Electronics Nv | Method of manufacturing an active matrix device |
| US6559506B1 (en) * | 2002-04-03 | 2003-05-06 | General Electric Company | Imaging array and methods for fabricating same |
-
2002
- 2002-04-03 US US10/116,469 patent/US6740884B2/en not_active Expired - Lifetime
-
2003
- 2003-03-27 EP EP03251941A patent/EP1353382A3/en not_active Withdrawn
- 2003-04-02 KR KR10-2003-0020676A patent/KR20030082379A/ko not_active Ceased
- 2003-04-02 JP JP2003098710A patent/JP4484440B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP4484440B2 (ja) | 2010-06-16 |
| US20030189175A1 (en) | 2003-10-09 |
| US6740884B2 (en) | 2004-05-25 |
| EP1353382A3 (en) | 2003-11-26 |
| EP1353382A2 (en) | 2003-10-15 |
| JP2004006780A (ja) | 2004-01-08 |
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| Date | Code | Title | Description |
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| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20030402 |
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| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20080402 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20030402 Comment text: Patent Application |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20091210 Patent event code: PE09021S01D |
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| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20100222 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20091210 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |