JP4424341B2 - 薄膜トランジスタ、電子回路、表示装置および電子機器 - Google Patents

薄膜トランジスタ、電子回路、表示装置および電子機器 Download PDF

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Publication number
JP4424341B2
JP4424341B2 JP2006281994A JP2006281994A JP4424341B2 JP 4424341 B2 JP4424341 B2 JP 4424341B2 JP 2006281994 A JP2006281994 A JP 2006281994A JP 2006281994 A JP2006281994 A JP 2006281994A JP 4424341 B2 JP4424341 B2 JP 4424341B2
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thin film
film transistor
particles
insulating
oxide
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JP2006281994A
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Japanese (ja)
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JP2007180498A (ja
JP2007180498A5 (enExample
Inventor
壮一 守谷
健夫 川瀬
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2006281994A priority Critical patent/JP4424341B2/ja
Priority to US11/565,714 priority patent/US7838916B2/en
Publication of JP2007180498A publication Critical patent/JP2007180498A/ja
Publication of JP2007180498A5 publication Critical patent/JP2007180498A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Formation Of Insulating Films (AREA)
JP2006281994A 2005-12-02 2006-10-16 薄膜トランジスタ、電子回路、表示装置および電子機器 Active JP4424341B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006281994A JP4424341B2 (ja) 2005-12-02 2006-10-16 薄膜トランジスタ、電子回路、表示装置および電子機器
US11/565,714 US7838916B2 (en) 2005-12-02 2006-12-01 Thin-film transistor, electronic circuit, display unit, and electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005349984 2005-12-02
JP2006281994A JP4424341B2 (ja) 2005-12-02 2006-10-16 薄膜トランジスタ、電子回路、表示装置および電子機器

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JP2007180498A JP2007180498A (ja) 2007-07-12
JP2007180498A5 JP2007180498A5 (enExample) 2009-11-12
JP4424341B2 true JP4424341B2 (ja) 2010-03-03

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US (1) US7838916B2 (enExample)
JP (1) JP4424341B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101381549B1 (ko) * 2013-02-28 2014-04-04 인하대학교 산학협력단 트랜지스터와 그 제조 방법 및 트랜지스터를 포함하는 전자 소자

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KR100737383B1 (ko) * 2006-09-11 2007-07-09 한국전자통신연구원 절연막, 이를 이용한 유기박막 트랜지스터 및 제조방법
KR101274695B1 (ko) 2006-11-30 2013-06-12 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판
US7915126B2 (en) * 2007-02-14 2011-03-29 Micron Technology, Inc. Methods of forming non-volatile memory cells, and methods of forming NAND cell unit string gates
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
JPWO2009087793A1 (ja) * 2008-01-11 2011-05-26 独立行政法人科学技術振興機構 電界効果トランジスタ、電界効果トランジスタの製造方法、中間体及び第２中間体
US20090247652A1 (en) * 2008-03-27 2009-10-01 Headwaters Technology Innovation, Llc Metal colloids and methods for making the same
CN100568574C (zh) * 2008-06-19 2009-12-09 中国科学院化学研究所 一种有机场效应晶体管及其制备方法与应用
JP4730623B2 (ja) * 2008-07-24 2011-07-20 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
KR101291320B1 (ko) * 2009-03-23 2013-07-30 한국전자통신연구원 유기 박막 트랜지스터 및 그 형성방법
US8354138B2 (en) * 2009-12-14 2013-01-15 Chung-Shan Institute Of Science And Technology, Armaments Bureau, Ministry Of National Defense Preparing method for coating PMMA particles with silicon dioxide
US8835915B2 (en) 2010-11-22 2014-09-16 3M Innovative Properties Company Assembly and electronic devices including the same
JP2012164806A (ja) * 2011-02-07 2012-08-30 Sumitomo Chemical Co Ltd 光及び熱エネルギー架橋性有機薄膜トランジスタ絶縁層材料
JP2020088170A (ja) * 2018-11-26 2020-06-04 住友化学株式会社 有機光電変換素子

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3515507B2 (ja) * 2000-09-29 2004-04-05 株式会社東芝 トランジスタおよびその製造方法
JP2004055649A (ja) * 2002-07-17 2004-02-19 Konica Minolta Holdings Inc 有機薄膜トランジスタ及びその製造方法
JP2004141514A (ja) * 2002-10-28 2004-05-20 Toshiba Corp 画像処理装置及び超音波診断装置
EP1609196B1 (en) * 2003-04-01 2010-12-22 Canon Kabushiki Kaisha Organic semiconductor device
JP2004327857A (ja) * 2003-04-25 2004-11-18 Pioneer Electronic Corp 有機トランジスタの製造方法および有機トランジスタ
KR100572801B1 (ko) * 2003-12-23 2006-04-19 삼성코닝 주식회사 기계적 특성이 우수한 절연막 코팅 조성물
US7248725B2 (en) * 2004-01-07 2007-07-24 Ramot At Tel Avia University Ltd. Methods and apparatus for analyzing ultrasound images
US7057205B2 (en) * 2004-03-17 2006-06-06 Lucent Technologies Inc. P-type OFET with fluorinated channels
KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
US7236558B2 (en) * 2005-07-07 2007-06-26 Terarecon, Inc. Three-dimensional image display device creating three-dimensional image directly from projection data
TW200737520A (en) * 2006-03-17 2007-10-01 Univ Nat Chiao Tung Gate dielectric structure and an organic thin film transistor based thereon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101381549B1 (ko) * 2013-02-28 2014-04-04 인하대학교 산학협력단 트랜지스터와 그 제조 방법 및 트랜지스터를 포함하는 전자 소자

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JP2007180498A (ja) 2007-07-12
US20070126002A1 (en) 2007-06-07
US7838916B2 (en) 2010-11-23

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