JP2007180498A5 - - Google Patents
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- Publication number
- JP2007180498A5 JP2007180498A5 JP2006281994A JP2006281994A JP2007180498A5 JP 2007180498 A5 JP2007180498 A5 JP 2007180498A5 JP 2006281994 A JP2006281994 A JP 2006281994A JP 2006281994 A JP2006281994 A JP 2006281994A JP 2007180498 A5 JP2007180498 A5 JP 2007180498A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- transistor according
- oxide
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims 13
- 230000002209 hydrophobic effect Effects 0.000 claims 6
- 239000010954 inorganic particle Substances 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 claims 5
- 239000007822 coupling agent Substances 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 4
- 229920000642 polymer Polymers 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 229910052809 inorganic oxide Inorganic materials 0.000 claims 2
- 239000006087 Silane Coupling Agent Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- 229910000428 cobalt oxide Inorganic materials 0.000 claims 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 1
- 239000004926 polymethyl methacrylate Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- DCVWZWOEQMSMLR-UHFFFAOYSA-N silylperoxysilane Chemical compound [SiH3]OO[SiH3] DCVWZWOEQMSMLR-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006281994A JP4424341B2 (ja) | 2005-12-02 | 2006-10-16 | 薄膜トランジスタ、電子回路、表示装置および電子機器 |
| US11/565,714 US7838916B2 (en) | 2005-12-02 | 2006-12-01 | Thin-film transistor, electronic circuit, display unit, and electronic device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005349984 | 2005-12-02 | ||
| JP2006281994A JP4424341B2 (ja) | 2005-12-02 | 2006-10-16 | 薄膜トランジスタ、電子回路、表示装置および電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007180498A JP2007180498A (ja) | 2007-07-12 |
| JP2007180498A5 true JP2007180498A5 (enExample) | 2009-11-12 |
| JP4424341B2 JP4424341B2 (ja) | 2010-03-03 |
Family
ID=38117816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006281994A Active JP4424341B2 (ja) | 2005-12-02 | 2006-10-16 | 薄膜トランジスタ、電子回路、表示装置および電子機器 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7838916B2 (enExample) |
| JP (1) | JP4424341B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100737383B1 (ko) * | 2006-09-11 | 2007-07-09 | 한국전자통신연구원 | 절연막, 이를 이용한 유기박막 트랜지스터 및 제조방법 |
| KR101274695B1 (ko) | 2006-11-30 | 2013-06-12 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이 기판 |
| US7915126B2 (en) * | 2007-02-14 | 2011-03-29 | Micron Technology, Inc. | Methods of forming non-volatile memory cells, and methods of forming NAND cell unit string gates |
| US20090001356A1 (en) * | 2007-06-29 | 2009-01-01 | 3M Innovative Properties Company | Electronic devices having a solution deposited gate dielectric |
| US7879688B2 (en) * | 2007-06-29 | 2011-02-01 | 3M Innovative Properties Company | Methods for making electronic devices with a solution deposited gate dielectric |
| JPWO2009087793A1 (ja) * | 2008-01-11 | 2011-05-26 | 独立行政法人科学技術振興機構 | 電界効果トランジスタ、電界効果トランジスタの製造方法、中間体及び第２中間体 |
| US20090247652A1 (en) * | 2008-03-27 | 2009-10-01 | Headwaters Technology Innovation, Llc | Metal colloids and methods for making the same |
| CN100568574C (zh) * | 2008-06-19 | 2009-12-09 | 中国科学院化学研究所 | 一种有机场效应晶体管及其制备方法与应用 |
| JP4730623B2 (ja) * | 2008-07-24 | 2011-07-20 | ソニー株式会社 | 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器 |
| KR101291320B1 (ko) * | 2009-03-23 | 2013-07-30 | 한국전자통신연구원 | 유기 박막 트랜지스터 및 그 형성방법 |
| US8354138B2 (en) * | 2009-12-14 | 2013-01-15 | Chung-Shan Institute Of Science And Technology, Armaments Bureau, Ministry Of National Defense | Preparing method for coating PMMA particles with silicon dioxide |
| US8835915B2 (en) | 2010-11-22 | 2014-09-16 | 3M Innovative Properties Company | Assembly and electronic devices including the same |
| JP2012164806A (ja) * | 2011-02-07 | 2012-08-30 | Sumitomo Chemical Co Ltd | 光及び熱エネルギー架橋性有機薄膜トランジスタ絶縁層材料 |
| KR101381549B1 (ko) * | 2013-02-28 | 2014-04-04 | 인하대학교 산학협력단 | 트랜지스터와 그 제조 방법 및 트랜지스터를 포함하는 전자 소자 |
| JP2020088170A (ja) * | 2018-11-26 | 2020-06-04 | 住友化学株式会社 | 有機光電変換素子 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3515507B2 (ja) * | 2000-09-29 | 2004-04-05 | 株式会社東芝 | トランジスタおよびその製造方法 |
| JP2004055649A (ja) * | 2002-07-17 | 2004-02-19 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ及びその製造方法 |
| JP2004141514A (ja) * | 2002-10-28 | 2004-05-20 | Toshiba Corp | 画像処理装置及び超音波診断装置 |
| EP1609196B1 (en) * | 2003-04-01 | 2010-12-22 | Canon Kabushiki Kaisha | Organic semiconductor device |
| JP2004327857A (ja) * | 2003-04-25 | 2004-11-18 | Pioneer Electronic Corp | 有機トランジスタの製造方法および有機トランジスタ |
| KR100572801B1 (ko) * | 2003-12-23 | 2006-04-19 | 삼성코닝 주식회사 | 기계적 특성이 우수한 절연막 코팅 조성물 |
| US7248725B2 (en) * | 2004-01-07 | 2007-07-24 | Ramot At Tel Avia University Ltd. | Methods and apparatus for analyzing ultrasound images |
| US7057205B2 (en) * | 2004-03-17 | 2006-06-06 | Lucent Technologies Inc. | P-type OFET with fluorinated channels |
| KR100560796B1 (ko) * | 2004-06-24 | 2006-03-13 | 삼성에스디아이 주식회사 | 유기 박막트랜지스터 및 그의 제조방법 |
| US20060231829A1 (en) * | 2005-04-13 | 2006-10-19 | Xerox Corporation | TFT gate dielectric with crosslinked polymer |
| US7236558B2 (en) * | 2005-07-07 | 2007-06-26 | Terarecon, Inc. | Three-dimensional image display device creating three-dimensional image directly from projection data |
| TW200737520A (en) * | 2006-03-17 | 2007-10-01 | Univ Nat Chiao Tung | Gate dielectric structure and an organic thin film transistor based thereon |
-
2006
- 2006-10-16 JP JP2006281994A patent/JP4424341B2/ja active Active
- 2006-12-01 US US11/565,714 patent/US7838916B2/en active Active
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