JP2007180498A5 - - Google Patents

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Publication number
JP2007180498A5
JP2007180498A5 JP2006281994A JP2006281994A JP2007180498A5 JP 2007180498 A5 JP2007180498 A5 JP 2007180498A5 JP 2006281994 A JP2006281994 A JP 2006281994A JP 2006281994 A JP2006281994 A JP 2006281994A JP 2007180498 A5 JP2007180498 A5 JP 2007180498A5
Authority
JP
Japan
Prior art keywords
thin film
film transistor
transistor according
oxide
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006281994A
Other languages
English (en)
Japanese (ja)
Other versions
JP4424341B2 (ja
JP2007180498A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006281994A priority Critical patent/JP4424341B2/ja
Priority claimed from JP2006281994A external-priority patent/JP4424341B2/ja
Priority to US11/565,714 priority patent/US7838916B2/en
Publication of JP2007180498A publication Critical patent/JP2007180498A/ja
Publication of JP2007180498A5 publication Critical patent/JP2007180498A5/ja
Application granted granted Critical
Publication of JP4424341B2 publication Critical patent/JP4424341B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006281994A 2005-12-02 2006-10-16 薄膜トランジスタ、電子回路、表示装置および電子機器 Active JP4424341B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006281994A JP4424341B2 (ja) 2005-12-02 2006-10-16 薄膜トランジスタ、電子回路、表示装置および電子機器
US11/565,714 US7838916B2 (en) 2005-12-02 2006-12-01 Thin-film transistor, electronic circuit, display unit, and electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005349984 2005-12-02
JP2006281994A JP4424341B2 (ja) 2005-12-02 2006-10-16 薄膜トランジスタ、電子回路、表示装置および電子機器

Publications (3)

Publication Number Publication Date
JP2007180498A JP2007180498A (ja) 2007-07-12
JP2007180498A5 true JP2007180498A5 (enExample) 2009-11-12
JP4424341B2 JP4424341B2 (ja) 2010-03-03

Family

ID=38117816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006281994A Active JP4424341B2 (ja) 2005-12-02 2006-10-16 薄膜トランジスタ、電子回路、表示装置および電子機器

Country Status (2)

Country Link
US (1) US7838916B2 (enExample)
JP (1) JP4424341B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100737383B1 (ko) * 2006-09-11 2007-07-09 한국전자통신연구원 절연막, 이를 이용한 유기박막 트랜지스터 및 제조방법
KR101274695B1 (ko) 2006-11-30 2013-06-12 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판
US7915126B2 (en) * 2007-02-14 2011-03-29 Micron Technology, Inc. Methods of forming non-volatile memory cells, and methods of forming NAND cell unit string gates
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
JPWO2009087793A1 (ja) * 2008-01-11 2011-05-26 独立行政法人科学技術振興機構 電界効果トランジスタ、電界効果トランジスタの製造方法、中間体及び第２中間体
US20090247652A1 (en) * 2008-03-27 2009-10-01 Headwaters Technology Innovation, Llc Metal colloids and methods for making the same
CN100568574C (zh) * 2008-06-19 2009-12-09 中国科学院化学研究所 一种有机场效应晶体管及其制备方法与应用
JP4730623B2 (ja) * 2008-07-24 2011-07-20 ソニー株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器
KR101291320B1 (ko) * 2009-03-23 2013-07-30 한국전자통신연구원 유기 박막 트랜지스터 및 그 형성방법
US8354138B2 (en) * 2009-12-14 2013-01-15 Chung-Shan Institute Of Science And Technology, Armaments Bureau, Ministry Of National Defense Preparing method for coating PMMA particles with silicon dioxide
CN103222081B (zh) 2010-11-22 2016-04-06 3M创新有限公司 组件和包括该组件的电子器件
JP2012164806A (ja) * 2011-02-07 2012-08-30 Sumitomo Chemical Co Ltd 光及び熱エネルギー架橋性有機薄膜トランジスタ絶縁層材料
KR101381549B1 (ko) * 2013-02-28 2014-04-04 인하대학교 산학협력단 트랜지스터와 그 제조 방법 및 트랜지스터를 포함하는 전자 소자
JP2020088170A (ja) * 2018-11-26 2020-06-04 住友化学株式会社 有機光電変換素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3515507B2 (ja) * 2000-09-29 2004-04-05 株式会社東芝 トランジスタおよびその製造方法
JP2004055649A (ja) * 2002-07-17 2004-02-19 Konica Minolta Holdings Inc 有機薄膜トランジスタ及びその製造方法
JP2004141514A (ja) * 2002-10-28 2004-05-20 Toshiba Corp 画像処理装置及び超音波診断装置
DE602004030668D1 (de) * 2003-04-01 2011-02-03 Canon Kk Organische halbleiteranordnung
JP2004327857A (ja) * 2003-04-25 2004-11-18 Pioneer Electronic Corp 有機トランジスタの製造方法および有機トランジスタ
KR100572801B1 (ko) * 2003-12-23 2006-04-19 삼성코닝 주식회사 기계적 특성이 우수한 절연막 코팅 조성물
US7248725B2 (en) * 2004-01-07 2007-07-24 Ramot At Tel Avia University Ltd. Methods and apparatus for analyzing ultrasound images
US7057205B2 (en) * 2004-03-17 2006-06-06 Lucent Technologies Inc. P-type OFET with fluorinated channels
KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
US7236558B2 (en) * 2005-07-07 2007-06-26 Terarecon, Inc. Three-dimensional image display device creating three-dimensional image directly from projection data
TW200737520A (en) * 2006-03-17 2007-10-01 Univ Nat Chiao Tung Gate dielectric structure and an organic thin film transistor based thereon

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